ST330SPBF VISHAY | Alldatasheet

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Document Number: 94409 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 1 Phase Control Thyristors (Stud Version), 330 A ST330SPbF Series Vishay High Power Products

FEATURES

  • Center amplifying gate  International standard case TO-209AE (TO-118)  Hermetic metal case wi th ceramic insulator  Compression bonded encapsulation for heavy duty operations such as severe thermal cycling  Lead (Pb)-free  Designed and qualified for industrial level TYPICAL APPLICATIONS  DC motor controls  Controlled DC power supplies  AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 330 A TO-209AE (TO-118) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 330 A TC 75 °C IT(RMS) 520 A ITSM

50 Hz 9000

60 Hz 9420

50 Hz 405

60 Hz 370

tq Typical 100 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST330S 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100

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2 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 330 A 75 °C Maximum RMS on-state current I T(RMS) DC at 75 °C case temperature 520 AMaximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 9000 t = 8.3 ms 9420 t = 10 ms 100 % V RRM reapplied 7570 t = 8.3 ms 7920 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 405 kA2s t = 8.3 ms 370 t = 10 ms 100 % VRRM reapplied 287 t = 8.3 ms 262 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 4050 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.834 V High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.898 Low level value of on-state slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.687 mΩ High level value of on-state slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.636 Maximum on-state voltage V TM Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V Maximum holding current I H TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current I L 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM

1000 A/µs

Gate current A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time t q ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA

Document Number: 94409 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 3 ST330SPbF Series Phase Control Thyristors (Stud Version), 330 A Vishay High Power Products Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power P GM TJ = TJ maximum, tp ≤ 5 ms 10.0 W Maximum average gate power P G(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum peak positive gate voltage + V GM TJ = TJ maximum, tp ≤ 5 ms V Maximum peak negative gate voltage - V GM 5.0 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units

12 V anode to cathode applied

J = 25 °C 100 200 TJ = 125 °C 50 - DC gate voltage required to trigger V GT TJ = - 40 °C 2.5 - VTJ = 25 °C 1.8 3 TJ = 125 °C 1.1 - DC gate current not to trigger I GD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 10 mA DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to case R thJC DC operation 0.10 K/W Maximum thermal resistance, case to heatsink R thC-hs Mounting surface, smooth, flat and greased 0.03 Mounting torque, ± 10 % Non-lubricated threads 48.5 (425) N · m (lbf · in) Approximate weight 535 g Case style See dimension - link at the end of datasheet TO-209AE (TO-118) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION REC TANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.011 0.008 TJ = TJ maximum K/W 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042

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Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics 100 110 120 130 0 50 100 150 200 250 300 350 Maximum Allowable Cas e T emperature (°C) 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle ST3 3 0 S Se r i e s R (DC) = 0.10 K/ W thJC 100 110 120 130 0 100 200 300 400 500 600 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Max imum Allowable Cas e T emperature (°C) Conduction P eriod ST3 3 0 S Se r i e s R (DC) = 0.10 K/ W thJC 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) 0.08K/W 0.2K/ W 0.3K/W

0.4 K/W

0.6 K/W

1.2 K/ W

R =0.03K/W -DeltaR thSA 0.12K/W 120 160 200 240 280 320 360 400 440 480 0 50 100 150 200 250 300 350 180° 120° 90° 60° 30° RM S Li m it Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) ST3 3 0 S Se r i e s T = 1 2 5 ° C J 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R 0.0

3 K/ W

  • De lta R thS A 0.08K/W 0.12K/W

0.2 K/W

0.3 K/W

0.4 K/ W

1.2 K/W

180° 120° 90° 60° 30° RM S Lim i t Conduction P eriod Maximum Average On-s tate P ower L os s (W ) Average On-s tate Current (A) ST3 3 0 S Se r i e s T = 125°C J

Document Number: 94409 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 5 ST330SPbF Series Phase Control Thyristors (Stud Version), 330 A Vishay High Power Products Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - On-State Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Puls es (N) Peak Half S ine Wave On-state Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J ST3 3 0 S Se r i e s At Any R ated Load Condition And With R ated V Appl i ed F ol lowi ng S urge. RRM 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 P uls e T rain Duration (s ) Vers us Puls e T rain Duration. Control Pe a k Ha lf Sine Wa v e O n-st a t e C urre nt ( A) Initial T = 125°C No Voltage R eapplied R ated V R eappl ied RRM J S T 330S S eries Maximum Non R epetitive S urge Current Of Conduction May Not B e Maintained. Instantaneous On-state Voltage (V) Instantaneous On-state Current (A) 100 1000 10000 012 3 4567 Tj = 25 °C Tj = 125 °C ST330S Series 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Sq u a r e W a v e Pu l se D u r a t i o n ( s) thJC ST3 3 0 S Se r i e s St e a d y St a t e V a l u e R = 0.10 K/ W (DC Operation) thJC T rans ient T hermal I mpedance Z (K /W)

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6 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj = 2 5 ° C Tj = 12 5 ° C Tj = - 4 0 ° C (2) (3) In st a n t a n e o u s G a t e C u rre n t ( A ) Insta nt a neous Ga te Vo lt ag e (V) R ectangular gate puls e a) R ecommended load line for b) R ecommended load l ine for <=30% rated di/dt : 10V, 10ohms F requency L imited by P G(AV) rated di/ dt : 20V, 10ohms; tr<=1 µs tr<=1 µs (1) (1) P GM = 10W, tp = 4ms (2) P GM = 20W, tp = 2ms (3) P GM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms D e v i c e : ST3 3 0 S Se r i e s (4) - Thyristor - Essential part number - 0 = Converter grade - S = Compression bonding stud - Voltage code x 100 = V RRM (see Voltage Ratings table) - P = Stud base 3/4"-16UNF-2A threads - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) - Lead (Pb)-free Device code 513 24 678 ST 33 0 S 16 P 0 PbF LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95080

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.