ST330S04P1 VISHAY | Alldatasheet
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www.vishay.com Vishay Semiconductors Revision: 08-Jul-14 1 Document Number: 94409 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Phase Control Thyristors (Stud Version), 330 A
FEATURES
- Center amplifying gate
- International standard case TO-209AE (TO-118)
- Hermetic metal case with ceramic insulator
- Compression bonded encapsulation for heavy duty operations such as severe thermal cycling
- Designed and qualified for industrial level
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS
- DC motor controls Controlled DC power supplies AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 330 A VDRM/VRRM 400 V, 2000 V VTM 1.52 V IGT 200 mA TJ -40 °C to 125 °C Package TO-209AE (TO-118) Diode variation Single SCR TO- 209AE (TO-118) MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I T(AV) 330 A TC 75 °C IT(RMS) 520 A ITSM
50 Hz 9000
60 Hz 9420
I
50 Hz 405
60 Hz 370
tq Typical 100 µs TJ -40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA VS-ST330S 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100
www.vishay.com Vishay Semiconductors Revision: 08-Jul-14 2 Document Number: 94409 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature I T(AV) 180° conduction, half sine wave 330 A 75 °C Maximum RMS on-state current IT(RMS) DC at 75 °C case temperature 520 AMaximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial T J = TJ maximum 9000 t = 8.3 ms 9420 t = 10 ms 100 % V RRM reapplied 7570 t = 8.3 ms 7920 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 405 kA t = 8.3 ms 370 t = 10 ms 100 % V RRM reapplied 287 t = 8.3 ms 262 Maximum I2t for fusing I 2t t = 0.1 to 10 ms, no voltage reapplied 4050 kA2s Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.834 V High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.898 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.687 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.636 Maximum on-state voltage VTM Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V Maximum holding current IH TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current IL 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 , t r 1 μs TJ = TJ maximum, anode voltage 80 % VDRM
1000 A/µs
Gate current A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time t q ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
www.vishay.com Vishay Semiconductors Revision: 08-Jul-14 3 Document Number: 94409 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note
- The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A Maximum peak positive gate voltage +VGM TJ = TJ maximum, tp 5 ms V Maximum peak negative gate voltage -VGM 5.0 DC gate current required to trigger IGT TJ = -40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units
12 V anode to cathode applied
J = 25 °C 100 200 TJ = 125 °C 50 - DC gate voltage required to trigger VGT TJ = -40 °C 2.5 - VTJ = 25 °C 1.8 3 TJ = 125 °C 1.1 - DC gate current not to trigger IGD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to cathode applied 10 mA DC gate voltage not to trigger VGD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J -40 to 125 Maximum storage temperature range TStg -40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.10 K/W Maximum thermal resistance, case to heatsink RthC-hs Mounting surface, smooth, flat and greased 0.03 Mounting torque, ± 10 % Non-lubricated threads 48.5 (425) N · m (lbf · in) Approximate weight 535 g Case style See dimension - link at the end of datasheet TO-209AE (TO-118) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.011 0.008 TJ = TJ maximum K/W 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042
www.vishay.com Vishay Semiconductors Revision: 08-Jul-14 4 Document Number: 94409 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics 100 110 120 130 0 50 100 150 200 250 300 350 Maximum Allowable Cas e T emperature (°C) 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle ST3 3 0 S Se r i e s R (DC) = 0.10 K/ W thJC 100 110 120 130 0 100 200 300 400 500 600 DC 30° 60° 90° 120°180° Average On-s tate Current (A) Max imum Allowable Cas e T emperature (°C) Conduction P eriod ST3 3 0 S Se r i e s R (DC) = 0.10 K/W thJC 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) 0.08K/W 0.2K/ W 0.3K/W
0.4 K/W
0.6 K/W
1.2 K/ W
R =0.03K/W -DeltaR thSA 0.12K/W 120 160 200 240 280 320 360 400 440 480 0 50 100 150 200 250 300 350 180° 120° 90° 60° 30° RM S Li m it Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) ST3 3 0 S Se r i e s T = 1 2 5 ° C J 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R 0.0
3 K/ W
- De lta R thS A 0.08K/W 0.12K/W
0.2 K/W
0.3 K/W
0.4 K/ W
1.2 K/W
180° 120° 90° 60° 30° RM S Lim i t Conduction P eriod Maximum Average On-s tate P ower L os s (W ) Average On-s tate Current (A) ST3 3 0 S Se r i e s T = 125°C J
www.vishay.com Vishay Semiconductors Revision: 08-Jul-14 5 Document Number: 94409 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - On-State Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Puls es (N) Peak Half S ine Wave On-state Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J ST3 3 0 S Se r i e s At Any R ated Load Condition And With R ated V Appl i ed F ol lowi ng S urge.RRM 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 P uls e T rain Duration (s ) Vers us Puls e T rain Duration. Control Pe a k Ha lf Sine Wa v e O n-st a t e C urre nt ( A) Initial T = 125°C No Voltage R eapplied R ated V R eappl ied RRM J S T 330S S eries Maximum Non R epetitive S urge Current Of Conduction May Not B e Maintained. Instantaneous On-state Voltage (V) Instantaneous On-state Current (A) 100 1000 10000 0 1 2 3 4 5 6 7 Tj = 25 °C Tj = 125 °C ST330S Series 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Sq u a r e W a v e Pu l se D u r a t i o n ( s) thJC ST3 3 0 S Se r i e s St e a d y St a t e V a l u e R = 0.10 K/ W (DC Operation) thJC T rans ient T hermal I mpedance Z (K /W)
www.vishay.com Vishay Semiconductors Revision: 08-Jul-14 6 Document Number: 94409 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj = 2 5 ° C Tj = 12 5 ° C Tj = - 4 0 ° C (2) (3) In st a n t a n e o u s G a t e C u rre n t ( A ) Insta nt a neous Ga te Vo lt ag e (V) R ectangular gate puls e a) R ecommended load line for b) R ecommended load l ine for <=30% rated di/dt : 10V, 10ohms F requency L imited by P G(AV) rated di/ dt : 20V, 10ohms; tr<=1 µs tr<=1 µs (1) (1) P GM = 10W, tp = 4ms (2) P GM = 20W, tp = 2ms (3) P GM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms D e v i c e : ST3 3 0 S Se r i e s (4) - Thyristor2 - Essential part number3 - 0 = Converter grade4 - S = Compression bonding stud5 - Voltage code x 100 = V RRM (see Voltage Ratings table)6 - P = Stud base 3/4"-16UNF-2A threads7 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) Device code 51 32 4 6 7 8 9 STVS- 33 0 S 16 P 0 PbF 1 - Vishay Semiconductors product - None = Standard production - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95080
Document Number: 95080 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 02-Aug-07 1 TO-209AE (TO-118) Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters (inches) Note (1) For metric device: M24 x 1.5 - length 21 (0.83) maximum Red cathode Red silicon rubber 10.5 (0.41) NOM. White gate 4.3 (0.17) DIA. Ceramic housing White shrink 47 (1.85) MAX. 245 (9.65) 255 (10.04) 38 (1.50) MAX. DIA. 22 (0.87) MAX. 21 (0.82) MAX. SW 45 Flexible leads 4.5 (0.18) MAX. C.S. 50 mm2 (0.078 s.i.) Red shrink 49 (1.92) MAX. 3/4"16 UNF-2A (1) 27.5 (1.08) MAX. Fast-on terminals AMP. 280000-1 REF-250 9.5 (0.37) MIN. 22 (0.86) MIN.
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