ST330C12C0 IRF | Alldatasheet

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Metal case with ceramic insulator International standard case TO-200AB (E-PUK)Typical Applications DC motor controls Controlled DC power supplies AC controllers IT(AV) 720 A @ Ths 55 °C IT(RMS) 1420 A @ Ths 25 °C ITSM @ 50Hz 9000 A @ 60Hz 9420 A I2t@ 50Hz 405 KA 2s @ 60Hz 370 KA 2s VDRM/VRRM 400 to 1600 V tq typical 100 µs TJ - 40 to 125 °C Parameters ST330C..C Units Major Ratings and Characteristics case style TO-200AB (E-PUK) 720A PHASE CONTROL THYRISTORS Hockey Puk Version ST330C..C SERIES Bulletin I25155 rev. D 04/03 www.irf.com

ST330C..C Series Bulletin I25155 rev. D 04/03 www.irf.com di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω , tr ≤ 1µs of turned-on current T J = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100 Ω, tp = 500µs Parameter ST330C..C Units Conditions Switching

1000 A/µs

td Typical delay time 1.0 tq Typical turn-off time 100 µs Voltage V DRM /VRRM , max. repetitive V RSM , maximum non- I DRM /IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max VV m A 04 400 500 08 800 900 ST330C..C 12 1200 1300 50 14 1400 1500 16 1600 1700 ELECTRICAL SPECIFICATIONS Voltage Ratings IT(AV) Max. average on-state current 720 (350) A 180° conduction, half sine wave @ Heatsink temperature 55 (75) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 1420 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one-cycle 9000 t = 10ms No voltage non-repetitive surge current 9420 A t = 8.3ms reapplied 7570 t = 10ms 100% V RRM 7920 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 405 t = 10ms No voltage Initial T J = TJ max. 370 t = 8.3ms reapplied 287 t = 10ms 100% V RRM 262 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 4050 KA 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO) 1 Low level value of threshold voltage VT(TO) 2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage 1.96 V I pk= 1810A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Typical latching current 1000 0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.58 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.57 (I > π x IT(AV)),TJ = TJ max. Parameter ST330C..C Units Conditions 0.92 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA2s V mΩ mA TJ = 25°C, anode supply 12V resistive load

ST330C..C Series Bulletin I25155 rev. D 04/03 www.irf.com dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current Blocking 500 V/ µsT J = TJ max. linear to 80% rated VDRM Parameter ST330C..C Units Conditions 50 mA T J = TJ max, rated VDRM /VRRM applied PGM Maximum peak gate power 10.0 T J = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 T J = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A T J = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage GM Maximum peak negative gate voltage TJ = - 40°C mA T J = 25°C TJ = 125°C TJ = - 40°C VT J = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA Parameter ST330C..C Units Conditions 5.0 Triggering TYP. MAX. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - VGD DC gate voltage not to trigger 0.25 V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied TJ = TJ max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode appliedV GT DC gate voltage required to trigger IGT DC gate current required to trigger W V TJ = TJ max, tp ≤ 5ms TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.09 DC operation single side cooled junction to heatsink 0.04 DC operation double side cooled RthC-hs Max. thermal resistance, 0.02 DC operation single side cooled case to heatsink 0.01 DC operation double side cooled F Mounting force, ± 10% 9800 N (1000) (Kg) wt Approximate weight 83 g Parameter ST330C..C Units Conditions K/W Thermal and Mechanical Specification Case style TO - 200AB (E-PUK) See Outline Table K/W

ST330C..C Series Bulletin I25155 rev. D 04/03 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) Ordering Information Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Device Code 51 2 3 4 ST 33 0 C 16 C 1 76 8 Single Side Double Side Single Side Double Side 120° 0.014 0.012 0.014 0.013 90° 0.017 0.015 0.019 0.017 K/W 60° 0.025 0.022 0.026 0.023 30° 0.043 0.036 0.043 0.037 Sinusoidal conduction Rectangular conduction Conduction angle Units Conditions

ST330C..C Series Bulletin I25155 rev. D 04/03 www.irf.com Outline Table Case Style TO-200AB (E-PUK) All dimensions in millimeters (inches) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 0 50 100 150 200 250 300 350 400 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats ink T emperatur e (°C) S T 330C..C S eries (S ingle S ide Cooled) R (DC) = 0.09 K/ WthJ-hs 100 110 120 130 0 100 200 300 400 500 600 700 800 900 DC 30° 60° 90° 120°180° Average On-s tate Current (A) Conduction P eriod Maximum Allowable H eats ink T emperature (°C) S T 330C..C S eries (S ingle S ide Cooled) R (DC) = 0.09 K/ W thJ-hs DIA. MAX. 4.75 (0.19) 28 (1.10) 6.5 (0.26) 0.3 (0.01) MIN. 0.3 (0.01) MIN. ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 14.1 / 15.1 (0.56 / 0.59) 25°± 5° GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE 25.3 (0.99) 40.5 (1.59) DIA. MAX. DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 42 (1.65) MAX. Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)

ST330C..C Series Bulletin I25155 rev. D 04/03 www.irf.com Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 100 110 120 130 0 200 400 600 800 1000 1200 1400 1600 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction P eriod Maximum Allowable H eats ink T emperature (°C) S T 330C..C S eries (Double S ide Cooled) R (DC) = 0.04 K/ WthJ-hs 100 110 120 130 0 200 400 600 800 1000 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle Maximum Allowable H eats ink T emperature (°C) S T 330C..C S eries (Double S ide Cooled) R (DC) = 0.04 K/ WthJ-hs 200 400 600 800 1000 1200 1400 1600 1800 0 200 400 600 800 1000 1200 DC 180° 120° 90° 60° 30° RM S Lim i t Conduction P eriod Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) S T 330C..C S eries T = 125°CJ 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 700 800 180° 120° 90° 60° 30° RM S Lim i t Conduction Angle Maximum Average On-s tate Power L os s (W) Average On-s tate Current (A) S T330C..C S eries T = 125°C J 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Pulses (N) Pea k Ha lf Sine Wave On-s tate Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J S T330C..C S eries At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 0.01 0.1 1 P uls e T rain Duration (s ) Vers us P uls e T rain Duration. Control Peak Half S ine Wave On-state Current (A) Initial T = 125°C No Voltage R eapplied R ated V R eappliedRRM J S T 330C..C S eries Maximum Non R epetitive S urge Current Of Conduction May Not B e Maintained. Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled

ST330C..C Series Bulletin I25155 rev. D 04/03 www.irf.com Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 11 - Gate Characteristics 100 1000 10000 01234567 T = 25°CJ Ins tantaneous On-s tate Cur rent (A) Ins tantaneous On-s tate Voltage (V) T = 125°CJ S T 330C..C S eries 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave P uls e Duration (s ) thJ-hs S teady S tate Value R = 0.09 K/ W (S ingle S ide Cooled) R = 0.04 K/ W (Double S ide Cooled) (DC Operation) thJ-hs thJ-hs S T 330C..C S eries T rans ient T hermal Impedance Z (K /W) 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj = 2 5 ° C Tj = 12 5 ° C Tj = - 4 0 ° C (2) (3) In st a n t a n e o u s G a t e C u rre n t ( A ) Ins tantaneous Gate Voltage (V) a) R ecommended load line for b) R ecommended load line for <=30% rated di/ dt : 10V, 10ohms F requency Limited by PG(AV) rated di/ dt : 20V, 10ohms; tr<=1 µs tr<=1 µs (1) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms R ectangular gate puls e Device: S T 330C..C S eries (4)

ST330C..C Series Bulletin I25155 rev. D 04/03 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 04 /03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.