ST3230C IRF | Alldatasheet

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Controlled DC power supplies AC controllers I T(AV) 2785 A @ T C 80 °C IT(AV) 3360 A @ T hs 55 °C IT(RMS) 5970 A @ T hs 25 °C ITSM @ 50Hz 61200 A @ 60Hz 64000 A I2t @ 50Hz 18730 KA 2s @ 60Hz 17000 KA 2s V DRM /VRRM 1000 to 1800 V tq typical 500 µs TJ max. 125 °C Parameters ST3230C..R Units Major Ratings and Characteristics (R-PUK)

ST3230C..R Series 2222222222222 D-426 Voltage V DRM /VRRM , max. repetitive VRSM , maximum non- IDRM /IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T C = 125°C V V mA 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 ELECTRICAL SPECIFICATIONS Voltage Ratings IT(AV) Max. average on-state current 2785 (1720) A @ Case temperature 80 °C IT(AV) Max. average on-state current 3360 (1360) A @ Heatsink temperature 55 (85) °C IT(RMS) Max. RMS on-state current 5970 A DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one-cycle No voltage non-repetitive surge current reapplied 50% V RRM reapplied Sinusoidal half wave, I2t Maximum I2t for fusing No voltage Initial TC = 125°C reapplied 50% V RRM reapplied V T(TO) Max. value of threshold voltage 0.92 V TJ = TJ max. rt Max. value of on-state slope resistance V TM Max. on-state voltage 1.3 V Ipk= 2900A, TC = 25°C IL Typical latching current 300 mA TJ = 25°C, V D = 5V Parameter ST3230C..R Units Conditions On-state Conduction A KA 2s 0.09 TJ = TJ max.m Ω 180° conduction, half sine wave double side (single side [anode side]) cooled Parameter ST3230C..R Units Conditions di/dt Max. repetitive 50Hz (no repetitive) From 67% VDRM to 1000A gate drive 10V, 5Ω , tr = 0.5µs rate of rise of turned-on current to 1A, TJ = TJ max. Gate drive 30V, 15Ω , Vd = 67% VDRM , TJ = 25°C Rise time 0.5µs IT = 1000A, tp = 1ms, TJ = TJ max, VRM = 50V, dIRR /dt = 2A/µs, VDR = 67% VDRM , dvDR /dt = 8V/µs linear 150 (300) A/µs µs tq Typical turn-off time 500 td Maximum delay time 4.5 t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms 61200 64000 49000 51300 18730 17000 12000 10920 ST3230C..R 250 Switching

ST3230C..R Series D-429 Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 4 - On-state Voltage Drop CharacteristicsFig. 3 - On-state Power Loss Characteristics

ST3230C..R Series D-430 Fig. 7 - Stored Charged Fig. 8 - Thermal Impedance ZthJ-C Characteristics Fig. 9 - Gate Characteristics

ST3230C..R Series D-4273333 dv/dt Maximum linear rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current 500 V/µs TJ = TJ max. to 67% rated VDRM Parameter ST3230C..R Units Conditions 250 mA TJ = 125°C rated V DRM /VRRM applied Triggering PGM Maximum peak gate power 150 tp = 100µs PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 30 A Anode positive with respect to cathode VGM Max. peak positive gate voltage 30 V Anode positive with respect to cathode -VGM Max. peak negative gate voltage 0.25 V Anode negative with respect to cathode IGT Maximum DC gate current required to trigger VGT Maximum gate voltage required to trigger Parameter ST3230C..R Units Conditions W 400 mA TC = 25°C, VDRM = 5V

4 V TC = 25°C, VDRM = 5V

VGD DC gate voltage not to trigger 0.25 V TC = 125°C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 180° 0.0010 0.0010 TJ = TJ max. 120° 0.0017 0.0017 K/W 60° 0.0044 0.0044 ΔR thJ-C Conduction (The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC) Conduction angle Single side Double side Units Conditions TJ max. Max. operating temperature 125 On-state (conducting) Tstg Max. storage temperature range -55 to 125 R thJ-C Thermal resistance, junction 0.019 DC operation single side cooled to case 0.0095 DC operation double side cooled R th(C-h) Thermal resistance, case 0.004 Single side cooled to heatsink 0.002 Double side cooled F Mounting force ± 10% wt Approximate weight 1600 g Case style (R-PUK) See Outline Table Parameter ST3230C..R Units Conditions Thermal and Mechanical Specification Clamping force 43KN with mounting compound 43000 (4400) N (Kg) Blocking K/W K/W

ST3230C..R Series 2222222222222 D-428 Ordering Information Table Device Code 51 2 3 4 ST 323 0 C 18 R 1 76 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - R = Puk Case 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt:None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) Outline Table (R-PUK) All dimensions in millimeters (inches) 112.5 (4.4) DIA. MAX. 73.2 (2.9) DIA. MAX. TWO PLACES GATE 1.5 (0.06) DIA. 3 7.7 (1.5 ) M A X . ANODE 3.7 (0.15) DIA. NOM. X 2.1 (0.1) DEEP MIN. BOTH ENDS CATHODE HOLE 1.5 (0.06) DIA. MAX. 4.76 (0.2) 20° ± 5° 6.3 (0.24)