ST303S

ST303S IRF | Alldatasheet

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High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters IT(AV) 300 A @ TC 65 °C IT(RMS) 471 A ITSM @ 50Hz 7950 A @ 60Hz 8320 A I2t@ 50Hz 316 KA 2s @ 60Hz 288 KA 2s VDRM /VRRM 400 to 1200 V tq 10 - 20 µs TJ - 40 to 125 °C Parameters ST303S Units Major Ratings and Characteristics case style TO-209AE (TO-118) ST303S SERIES INVERTER GRADE THYRISTORS Stud Version 300A Bulletin I25173 rev. C 03/03 www.irf.com

Bulletin I25173 rev. C 03/03 www.irf.com Voltage V DRM /VRRM, maximum V RSM , maximum I DRM/IRRM max. Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. VV m A 04 400 500 08 800 900 12 1200 1300 ST303S 50 ELECTRICAL SPECIFICATIONS Voltage Ratings Frequency Units 50Hz 670 470 1050 940 5240 4300 400Hz 480 330 1021 710 1800 1270 1000Hz 230 140 760 470 730 430 A 2500Hz 35 - 150 - 90 - Recovery voltage Vr 50 50 50 50 50 50 Voltage before turn-on Vd V DRM VDRM VDRM Rise of on-state current di/dt 50 50 - - - - A/ µs Case temperature 40 65 40 65 40 65 °C Equivalent values for RC circuit 10 Ω / 0.47µF 10 Ω / 0.47µF 10 Ω / 0.47µF ITM 180oel180oel 100µs ITM ITM Current Carrying Capability V IT(AV) Max. average on-state current 300 A 180° conduction, half sine wave @ Case temperature 65 °C IT(RMS) Max. RMS on-state current 471 DC @ 45°C case temperature ITSM Max. peak, one half cycle, 7950 t = 10ms No voltage non-repetitive surge current 8320 A t = 8.3ms reapplied 6690 t = 10ms 100% V RRM 7000 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 316 t = 10ms No voltage Initial T J = TJ max 288 t = 8.3ms reapplied 224 t = 10ms 100% V RRM 204 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 3160 KA 2√s t = 0.1 to 10ms, no voltage reapplied Parameter ST303S Units Conditions On-state Conduction KA2s

Bulletin I25173 rev. C 03/03 www.irf.com VTM Max. peak on-state voltage 2.16 I TM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse VT(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of forward slope resistance rt2 High level value of forward slope resistance IH Maximum holding current 600 T J = 25°C, I T > 30A IL Typical latching current 1000 T J = 25°C, V A= 12V, Ra = 6 Ω, IG= 1A Parameter ST303S Units Conditions On-state Conduction 1.44 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.46 (I > π x IT(AV)), TJ = TJ max. V 0.57 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.56 (I > π x IT(AV)), TJ = TJ max. mΩ mA di/dt Max. non-repetitive rate of rise T J = TJ max, VDRM = rated VDRM of turned-on current I TM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt = 200V/µs Switching Parameter ST303S Units Conditions

1000 A/µs

td Typical delay time 0.80 µs dv/dt Maximum critical rate of rise of T J = TJ max, linear to 80% VDRM, higher value off-state voltage available on request IRRM Max. peak reverse and off-state IDRM leakage current Parameter ST303S Units Conditions Blocking

500 V/ µs

50 mA T J = TJ max, rated VDRM/VRRM applied PGM Maximum peak gate power 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 A T J = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V Triggering Parameter ST303S Units Conditions VT J = TJ max, tp ≤ 5ms 200 mA TJ = 25°C, VA = 12V, Ra = 6Ω TJ = TJ max, rated VDRM applied tq Max. turn-off time 10 - 20 WT J = TJ max, f = 50Hz, d% = 50

Bulletin I25173 rev. C 03/03 www.irf.com TJ Max. junction operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case 0.10 DC operation RthCS Max. thermal resistance, case to heatsink 0.03 Mounting surface, smooth, flat and greased T Mounting torque, ± 10% 48.5 Nm (425) (Ibf-in) wt Approximate weight 535 g Case style TO-209AE (TO-118) See Outline Table Parameter ST303S Units Conditions Thermal and Mechanical Specifications K/W Non lubricated threads ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Ordering Information Table 5 6 8 9 ST 30 3 S 12 P F K 0 3 4 7 Device Code 1 2 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 K/W T J = TJ max. 60° 0.025 0.026 30° 0.041 0.042 Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = V RRM (See Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A 7 - Reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) dv/dt - tq combinations available dv/dt (V/µs) 200 tq(µs) 10 FN up to 800V 20 FK tq(µs) only for 20 FK 1000/1200V

Bulletin I25173 rev. C 03/03 www.irf.com Outline Table RED CATHODE RED SILICON RUBBER 10.5 (0.41) WHITE GATE 4.3 (0.17) DIA. CERAMIC HOUSING WHITE SHRINK NOM. 47 (1.85) MAX. 245 (9.65) 38 (1.50) MAX. DIA. 22 (0.87) MAX. MAX. 21 (0.82) MAX. SW 45 FLEXIBLE LEAD 4.5 (0.18) MAX. C.S. 50mm (0.078 s.i.) 255 (10.04)RED SHRINK 22 (0.86) MIN. 49 (1.92) MAX. 3/4"16 UNF-2A 27.5 (1.08) 9.5 (0.37) MIN. Fast-on Terminals Case Style TO-209AE (TO-118) All dimensions in millimeters (inches) AMP. 280000-1 REF-250 * FOR METRIC DEVICE: M24 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 0 50 100 150 200 250 300 350 Maximum Allowable Cas e T emperature (°C) 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle S T303S S eries R (DC) = 0.10 K/ WthJC 100 110 120 130 0 100 200 300 400 500 DC 30° 60° 90° 120°180° Average On-s tate Current (A) Maximum Allowable Cas e T emperature (°C) Conduction P eriod S T303S S eries R (DC) = 0.10 K/ WthJC

Bulletin I25173 rev. C 03/03 www.irf.com Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current 3000 3500 4000 4500 5000 5500 6000 6500 7000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Puls es (N) Pea k Ha lf Sine Wave On-s tate Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J S T 303S S eries At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 0.01 0.1 1 P uls e T rain Duration (s ) Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Peak Half S ine Wave On-state Current (A) Initial T = 125°C No Voltage R eapplied R ated V R eappliedRRM J S T 303S S eries Maximum Non R epetitive S urge Current Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R = 0.01 K/W - Delta R thSA

0.3 K/W

0.5 K/ W

0.2 K/W

0.16 K/W

0.12 K/W

0.06 K/W0.08 K/W

0.03 K/W

180° 120° 90° 60° 30° RM S Lim it Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) ST3 0 3 S Se r i e s T = 125°C J 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R = 0.01 K/W - Delta R thSA

0.5 K/W

0.06 K/W

0 50 100 150 200 250 300 350 400 450 500 DC 180° 120° 90° 60° 30° RM S Lim it Conduction P eriod Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) S T 303S S eries T = 125°C J

Bulletin I25173 rev. C 03/03 www.irf.com Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Fig. 7 - On-state Voltage Drop Characteristics 100 1000 10000 12345678 T = 2 5 ° CJ I ns tantaneous On-s tate Current (A) I ns tantaneous On-s tate Voltage (V) T = 125°CJ ST3 03 S Se r i e s 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 R ate Of Fall Of On-state Current - di/ dt (A/ µs) I = 500 A 300 A 200 A 100 A 50 A Maximum R everse R ec overy Current - Irr (A) S T 303S S eries T = 125 °CJ TM 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 R ate Of F all Of On-s tate Current - di/dt (A/µs ) I = 500 A 300 A 200 A 100 A 50 A M a x im u m Re v e rse Re c o v e ry C h a r g e - Q r r ( µ C ) S T 303S S eries T = 125 °CJ TM 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) thJCT rans ient T hermal Impedance Z (K/W) St e a d y St a t e V a l u e R = 0.10 K/ W (DC Operation) thJC S T 303S S eries 1E1 1E2 1E 3 1E 4 50 Hz 400 100 Pulse Ba sew id t h ( µs) 1000 1500 200 500 ST3 0 3 S Se r i e s S inus oidal puls e T = 65°C C S nubber circuit R = 10 o h m s C = 0.47 µF V = 80% V s s D DR M tp 1E1 1E 1 1E 2 1E 3 1E 4 1E1 1E2 1E 3 1E 4

50 Hz400

Pulse Ba se w id t h ( µs) Pea k On-sta te Current (A) 1000 1500 200500 S nub b er c irc uit R = 1 0 o h m s C = 0.47 µF V = 80% V s s D DR M 2000 ST3 0 3 S Se r i e s S inusoidal pulse T = 40°C C 1E 4 tp Fig. 11 - Frequency Characteristics

Bulletin I25173 rev. C 03/03 www.irf.com 1E 1 1E 2 1E 3 1E 4 1E 5 1E 1 1E2 1E3 1E4 Pulse Ba se w id t h ( µs) 20 joules p er p ulse P eak On-s tate Current (A) 0.5 1053 0.4 ST30 3 S Se ri e s S inus oidal puls e tp 1E4 1E 1 1E2 1E3 1E 4 Pu lse Ba se w id t h ( µs) 20 joules p er pulse 0.5 ST3 0 3 S Se r i e s R ectangular pulse di /dt = 5 0 A /µstp 1E1 0.4 Fig. 13 - Frequency Characteristics Fig. 12 - Frequency Characteristics 1E 0 1E 1 1E 2 1E 3 1E 4 1E 1 1E2 1E3 1E4 100 1500 200 Pulse Ba se w id t h ( µs) P eak On-s tate Current (A) 2500 400 1000 50 Hz 500 S nubber circuit R = 10 ohms C = 0.47 µF V = 80% V s s D DRM ST3 0 3 S Se r i e s T r apez oidal puls e T = 40°C di/ dt = 50A/ µs C 1E4 2000 1E1 1E2 1E3 1E4 50 Hz 400 100 1000 1500 200 P uls e B as ewidth (µs ) 500 Sn u b b e r c i r c u i t R = 10 ohms C = 0.47 µF V = 80% V s s D DRM ST3 0 3 S Se r i e s Tr apez oidal puls e T = 65°C di/dt = 50 A/µs C 2000 1E1 1E 0 1E 1 1E 2 1E 3 1E 4 1E 1 1E2 1E3 1E4 50 Hz 400 2500 100 1000 1500 200 Pulse Ba se w id t h ( µs) P eak On-s tate Current (A) 2000 S nub b er c irc uit R = 10 o h m s C = 0.47 µF V = 80% V s s D DRM ST3 0 3 S Se r i e s T r apez oidal puls e T = 40°C di/ dt = 100A/ µs Ctp 1E4 500 1E1 1E2 1E3 1E 4 50 Hz 400 100 1000 1500 200 Pulse Ba se w id t h ( µs) S T 303S S eries T r apez oidal puls e T = 65°C d i/ d t = 100A/ µs C Sn u b b e r c i r c u i t R = 10 o h m s C = 0.47 µF V = 80% V s s D DRM 2000 tp 500 1E1 Fig. 14 - Maximum On-state Energy Power Loss Characteristics

Bulletin I25173 rev. C 03/03 www.irf.com Fig. 15 - Gate Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj = 2 5 ° C Tj = 1 2 5 ° C Tj = - 4 0 ° C (1) (2) Ins tantaneous Gate Current (A) Ins tantaneous Gate Voltage (V) R ectangular gate puls e a) R ecommended load line for b) R ecommended load line for <=30% rated di/ dt : 10V, 10ohms rated di/ dt : 20V, 10ohms ; tr<=1 µs tr<=1 µs (1) PGM = 10W, tp = 20ms (2) PGM = 20W, tp = 10ms (3) PGM = 40W, tp = 5ms (4) PGM = 60W, tp = 3.3ms (3) Devic e: S T 303S Series (4) F requency L imited by PG(AV) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.