ST303C12CHK1-P

ST303CPBF VISHAY | Alldatasheet

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Document Number: 94373 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 25-Jul-08 1 Inverter Grade Thyristors (PUK Version), 620 A ST303CPbF Series Vishay High Power Products

FEATURES

• Metal case with ceramic insulator  All diffused design  Center amplifying gate  Guaranteed high dV/dt  Guaranteed high dI/dt  International standard case TO-200AB (E-PUK)  High surge current capability  Low thermal impedance  High speed performance  Lead (Pb)-free  Designed and qualified for industrial level TYPICAL APPLICATIONS I n v e r t e r s  Choppers  Induction heating  All types of force-commutated converters Note t q = 10 to 20 µs for 400 to 800 V devices tq = 15 to 30 µs for 1000 to 1200 V devices ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 620 A TO-200AB (E-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 620 A Ths 55 °C IT(RMS) 1180 A Ths 25 °C ITSM

50 Hz 7950

A

60 Hz 8320

50 Hz 316

60 Hz 289

tq Range 10 to 30 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST303C..C 04 400 500 08 800 900 10 1000 1100 12 1200 1300

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Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A CURRENT CARRYING CAPABILITY FREQUENCY UNITS

50 Hz 1314 1130 2070 1940 6930 6270

A

400 Hz 1260 1040 2190 1880 3440 2960

1000 Hz 900 700 1900 1590 1850 1540

2500 Hz 340 230 910 710 740 560

V Voltage before turn-on Vd VDRM VDRM VDRM Rise of on-state current dI/dt 50 - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 620 (230) A 55 (85) °C Maximum RMS on-state current I T(RMS) DC at 25 °C heatsink tem perature double side cooled 1180 AMaximum peak, one half cycle, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 7950 t = 8.3 ms 8320 t = 10 ms 100 % V RRM reapplied 6690 t = 8.3 ms 7000 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 316 kA2s t = 8.3 ms 289 t = 10 ms 100 % VRRM reapplied 224 t = 8.3 ms 204 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 3160 klA 2√s Maximum peak on-state voltage V TM ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.16 VLow level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.44 High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.48 Low level value of forward slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.57 mΩ High level value of forward slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.56 Maximum holding current I H TJ = 25 °C, IT > 30 A 600 mA Typical latching current I L TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 180° el ITM 180° el ITM 100 µs ITM

Document Number: 94373 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 25-Jul-08 3 ST303CPbF Series Inverter Grade Thyristors (PUK Version), 620 A Vishay High Power Products Note (1) tq = 10 to 20 µs for 400 to 800 V devices; tq = 15 to 30 µs for 1000 to 1200 V devices SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt 1000 A/µs Typical delay time t d TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source 0.83 µs Maximum turn-off time (1) minimum tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/µs VR = 50 V, tp = 500 µs, dV/dt: See table in device code maximum 30 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM TJ = TJ maximum, f = 50 Hz, d% = 50 W Maximum average gate power P G(AV) 10 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 10 A Maximum peak positive gate voltage + V GM 20 V Maximum peak negative gate voltage - V GM 5 Maximum DC gate currrent required to trigger I GT TJ = 25 °C, VA = 12 V, Ra = 6 Ω 200 mA Maximum DC gate voltage required to trigger V GT 3V Maximum DC gate current not to trigger I GD TJ = TJ maximum, rated VDRM applied 20 mA Maximum DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to heatsink R thJ-hs DC operation single side cooled 0.09 K/W DC operation double side cooled 0.04 Maximum thermal resistance, case to heatsink R thC-hs DC operation single side cooled 0.020 DC operation double side cooled 0.010 Mounting force, ± 10 % 9800 (1000) N (kg) Approximate weight 83 g Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)

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Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A Note  The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.010 0.007 0.007 TJ = TJ max. K/W 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 0 250 300 350 400 Maximum Allowable Heatsink Temperature (°C) Average On-State Current (A) 50 100 150 200 100 110 120 130 ST303C..C Series (Single side cooled) R thJ-hs (DC) = 0.09 K/W Ø Conduction angle 60° 30° 90° 120° 180° 0 500 600 700 Average On-State Current (A) 100 300200 400 Maximum Allowable Heatsink Temperature (°C) 100 110 120 130 ST303C..C Series (Single side cooled) R thJ-hs (DC) = 0.09 K/W Ø Conduction period 30° 60° 90° 120° 180° DC 0 400300 500 600 700 800 Average On-State Current (A) 100 200 Maximum Allowable Heatsink Temperature (°C) 100 110 120 130 30° 60° 90° 180° ST303C..C Series (Double side cooled) R thJ-hs (DC) = 0.04 K/W Ø Conduction angle 120° Average On-State Current (A) Maximum Allowable Heatsink Temperature (°C) 0 600 800 1000 1200200 400 100 110 120 130 ST303C..C Series (Double side cooled) R thJ-hs (DC) = 0.04 K/W Ø Conduction period 30° 60° DC 180° 90° 120°

Document Number: 94373 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 25-Jul-08 5 ST303CPbF Series Inverter Grade Thyristors (PUK Version), 620 A Vishay High Power Products Fig. 5 - On-State Power Loss Characteristics Fig. 6 - On-State Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - On-State Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Average On-State Current (A) Maximum Average On-State Power Loss (W) 0 500 600 700 800100 300200 400 200 400 600 800 1000 1200 1400 1600 1800 2000 RMS limit 180° 120° 90° 60° 30° Ø Conduction angle ST303C..C Series T J = 125 °C Maximum Average On-State Power Loss (W) 0 400 600 800 1000 1200200 Average On-State Current (A) 400 800 1200 1600 2000 2400 2800 DC 180° 120° 90° 60° 30° RMS limit ST303C..C Series T J = 125 °C Ø Conduction period 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-State Current (A) 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s At any rated load condition and with rated V RRM applied following surge ST303C..C Series 0.01 0.1 1 Pulse Train Duration (s) Peak Half Sine Wave On-State Current (A) 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 No voltage reapplied Rated VRRM reapplied Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained Initial TJ = 125 °C ST303C..C Series 100 012345678 1000 10 000 Instantaneous On-State Current (A) Instantaneous On-State Voltage (V) ST303C..C Series TJ = 125 °C TJ = 25 °C 0.01 0.1 1 100.001 Square Wave Pulse Duration (s) ZthJ-hs - Transient Thermal Impedance (K/W) 0.001 0.01 0.1 ST303C..C Series Steady state value RthJ-hs = 0.09 K/W (Single side cooled) RthJ-hs = 0.04 K/W (Double side cooled) (DC operation)

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Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A Fig. 11 - Reverse Recovered Charge Characteristics F ig. 12 - Reverse Recovered Current Characteristics Fig. 13 - Frequency Characteristics Fig. 14 - Frequency Characteristics 2010 30 50 70 90 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/µs) Qrr - Maximum Reverse Recovery Charge (µC) 100 120 140 160 180 200 220 240 260 280 300 320 ST303C..C Series TJ = 125 °C ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 20 30 50 70 9010 40 60 80 100 100 120 140 160 180 dI/dt - Rate of Fall of Forward Current (A/µs) Irr - Maximum Reverse Recovery Current (A) ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A ST303C..C Series TJ = 125 °C 100 10 100 1000 10 000 1000 10 000 Pulse Basewidth (µs) Peak On-State Current (A) Snubber circuit Rs = 10 Ω Cs = 0.47 µF VD = 80 % VDRM tp ST303C..C Series Sinusoidal pulse T C = 40 °C 50 Hz 100 200 500 400 1000 1500 2500 3000 2000 100 10 100 1000 10 000 1000 10 000 Pulse Basewidth (µs) Peak On-State Current (A) tp ST303C..C Series Sinusoidal pulse T C = 55 °C 50 Hz 100 500 400 1000 1500 2500 2000 3000 Snubber circuit R s = 10 Ω Cs = 0.47 µF VD = 80 % VDRM 200 10 100 1000 10 000 100 1000 10 000 Pulse Basewidth (µs) Peak On-State Current (A) Snubber circuit Rs = 10 Ω Cs = 0.47 µF VD = 80 % VDRM ST303C..C Series Trapezoidal pulse T C = 40 °C dI/dt = 50 A/µs tp 50 Hz 100 500 400 1000 1500 2500 2000 3000 200 10 100 1000 10 000 Pulse Basewidth (µs) Peak On-State Current (A) 100 1000 10 000 Snubber circuit Rs = 10 Ω Cs = 0.47 µF VD = 80 % VDRM ST303C..C Series Trapezoidal pulse T C = 55 °C dI/dt = 50 A/µs tp 50 Hz 100 500 400 1000 1500 2500 2000 3000 200

Document Number: 94373 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 25-Jul-08 7 ST303CPbF Series Inverter Grade Thyristors (PUK Version), 620 A Vishay High Power Products Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-State Energy Power Loss Characteristics Fig. 17 - Gate Characteristics 10 100 1000 10 000 100 1000 10 000 Pulse Basewidth (µs) Peak On-State Current (A) Snubber circuit Rs = 10 Ω Cs = 0.47 µF VD = 80 % VDRM ST303C..C Series Trapezoidal pulse TC = 40 °C dI/dt = 100 A/µs tp 50 Hz 100 500 400 1000 1500 2500 2000 3000 200 10 100 1000 10 000 100 1000 10 000 Pulse Basewidth (µs) Peak On-State Current (A) Snubber circuit Rs = 10 Ω Cs = 0.47 µF VD = 80 % VDRM ST303C..C Series Trapezoidal pulse T C = 55 °C dI/dt = 100 A/µs tp 50 Hz 100 500 400 1000 1500 2500 2000 3000 200 Pulse Basewidth (µs) Peak On-State Current (A) 10 100 1000 10 000 100 1000 10 000 100 000 tp ST303C..C Series Sinusoidal pulse 0.4 0.5 20 joules per pulse Pulse Basewidth (µs) Peak On-State Current (A) 10 100 1000 10 000 100 1000 10 000 100 000 ST303C..C Series Rectangular pulse dI/dt = 50 A/µs tp 0.4 0.5 20 joules per pulse 0.1 100 0.001 Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) 0.01 0.1 1 10 100 VGD IGD (b) (1) (2) (3) (4) Device: ST303C..C Series Frequency limited by PG(AV) (1) PGM = 10 W, tp = 20 ms (2) PGM = 20 W, tp = 10 ms (3) PGM = 40 W, tp = 5 ms (4) PGM = 60 W, tp = 3.3 ms Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; t r ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω t r ≤ 1 µs (a) TJ = 40 °C TJ = 25 °C TJ = 125 °C

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Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A ORDERING INFORMATION TABLE 3 = Fast-on terminals - Thyristor - Essential part number - 3 = Fast turn-off - C = Ceramic PUK - Voltage code x 100 = V RRM - C = PUK case TO-200AB (E-PUK) - Reapplied dV/dt code (for t q test condition) -t q code - 0 = Eyelet terminals 1 = Fast-on terminals dV/dt - tq combinations available dV/dt (V/µs) 20 50 100 200 400 CN DN ENtq (µs) 2 = Eyelet terminals - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) - P = Lead (Pb)-free * Standard part number. All other types available only on request.

15 CL DL EL FL* HL

FN* HN CM DM EM FM HM

20 CK DK EK FK* HK

25 CJ DJ EJ FJ* HJ

tq (µs) only for 1000/1200 V 30 -D H E H F H H H (see Voltage Ratings table) (gate and aux. cathode unsoldered leads) (gate and aux. cathode unsoldered leads) (gate and aux. cathode soldered leads) (gate and aux. cathode soldered leads) Device code 51 324 6 7 8 9 10 11 ST 30 3 C 12 C H K 1 - P LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.