ST303C1111

ST303C1111 IRF | Alldatasheet

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DISCRETE POWER DIODES and THYRISTORS DATA BOOK

INVERTER GRADE THYRISTORS Puk Version ST303C..C SERIES Bulletin I25172/A case style TO-200AB (E-PUK)

Features

Metal case with ceramic insulator International standard case TO-200AB (E-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics (*)tq = 10 to 20µs for 400 to 800V devices tq = 15 to 30µs for 1000 to 1200V devices IT(AV) 620 A @ T hs 55 °C IT(RMS) 1180 A @ T hs 25 °C ITSM @ 50Hz 7950 A @ 60Hz 8320 A I2t @ 50Hz 316 KA 2s @ 60Hz 289 KA 2s V DRM /VRRM 400 to 1200 V tq range (*) 10 to 30 µs TJ - 40 to 125 °C Parameters ST303C..C Units

ST303C..C Series Voltage V DRM /VRRM , maximum VRSM , maximum IDRM /IRRM max. Type number Code repetitive peak voltage non-repetitive peak voltage@ T J = TJ max. V V mA 04 400 500 08 800 900 10 1000 1100 12 1200 1300 ELECTRICAL SPECIFICATIONS Voltage Ratings Frequency Units 50Hz 1314 1130 2070 1940 6930 6270 400Hz 1260 1040 2190 1880 3440 2960 1000Hz 900 700 1900 1590 1850 1540 A 2500Hz 340 230 910 710 740 560 Recovery voltage Vr 50 50 50 50 50 50 Voltage before turn-on Vd VDRM VDRM VDRM Rise of on-state current di/dt 50 50 - - - - A/µ s Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF ITM 180oel180oel 100µs ITM ITM Current Carrying Capability V ST303C..C 50 IT(AV) Max. average on-state current 620 (230) A 180° conduction, half sine wave @ Heatsink temperature 55 (85) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 1180 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one half cycle, 7950 t = 10ms No voltage non-repetitive surge current 8320 A t = 8.3ms reapplied 6690 t = 10ms 100% V RRM 7000 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 316 t = 10ms No voltage Initial TJ = TJ max 289 t = 8.3ms reapplied 224 t = 10ms 100% V RRM 204 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 3160 KA 2√s t = 0.1 to 10ms, no voltage reapplied Parameter ST303C..C Units Conditions On-state Conduction KA 2s

ST303C..C Series Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Fig. 8 - Maximum Non-repetitive Surge CurrentFig. 7 - Maximum Non-repetitive Surge Current

ST303C..C Series Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Fig. 13 - Frequency Characteristics

ST303C..C Series Fig. 14 - Frequency Characteristics Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-state Energy Power Loss Characteristics

ST303C..C Series Fig. 17 - Gate Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 V G D IG D (b ) (a ) Tj=25 °C Tj=125 °C Tj=-40 °C (1) (2) In sta n ta n e o u s G a te C u rre n t (A ) Insta nta ne o u s G a te V o lt a g e (V) Re c ta n g u la r g a te p u lse a ) Re c o m m e n d e d lo a d lin e fo r b ) Re c o m m e n d e d lo a d lin e fo r < = 30 % ra te d d i/ d t : 10 V , 10 o h m s ra t e d d i/ d t : 20 V , 1 0o h m s; tr< =1 µ s t r< =1 µs (1) PG M = 10W , tp = 2 0m s (2) PG M = 20W , tp = 1 0m s (3) PG M = 40W , tp = 5m s (4) PG M = 60W , tp = 3 .3 m s (3 ) D e v ic e : ST30 3C ..C Se rie s Fre q u e n c y Lim ite d b y PG (A V ) (4 )

ST303C..C Series V TM Max. peak on-state voltage 2.16 ITM = 1255A, TJ = TJ max, tp = 10ms sine wave pulse V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of forward slope resistance rt2 High level value of forward slope resistance IH Maximum holding current 600 TJ = 25°C, IT > 30A IL Typical latching current 1000 TJ = 25°C, VA = 12V, Ra = 6Ω, IG = 1A Parameter ST303C..C Units Conditions On-state Conduction 1.44 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.V 0.56 (I > π x IT(AV)), TJ = TJ max. m Ω mA di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM of turned-on current ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM , ITM = 50A DC, tp= 1µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Switching Parameter ST303C..C Units Conditions

1000 A/µs

td Typical delay time 0.83 Min Max dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM , higher value off-state voltage available on request IRRM Max. peak reverse and off-state IDRM leakage current Parameter ST303C..C Units Conditions Blocking

500 V/µ s

50 mA TJ = TJ max, rated VDRM /VRRM applied PGM Maximum peak gate power 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms +V GM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V Triggering Parameter ST303C..C Units Conditions V TJ = TJ max, tp ≤ 5ms 200 mA 3 V µs tq Max. turn-off time (*) 10 30 W TJ = TJ max, f = 50Hz, d% = 50 (*) tq = 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices. 1.48 (I > π x IT(AV)), TJ = TJ max. 0.57 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. TJ = TJ max, rated VDRM applied TJ = 25°C, VA = 12V, Ra = 6Ω

ST303C..C Series Ordering Information Table 5 6 8 9 ST 30 3 C 12 C H K 1 3 4 7 Device Code 1 2 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) only for 1000/1200V up to 800V dv/dt - tq combinations available dv/dt (V/µs)20 50 100 200 400 tq(µs) 10 CN DN EN FN * HN

12 CM DM EM FM HM

15 CL DL EL FL * HL

20 CK DK EK FK * HK

tq(µs) 15 CL -- -- -- --

18 CP DP -- -- --

25 CJ DJ EJ FJ * HJ

*Standard part number. All other types available only on request. TJ Max. operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 150 R thJ-hsMax. thermal resistance, 0.09 DC operation single side cooled junction to heatsink 0.04 DC operation double side cooled R thC-hsMax. thermal resistance, 0.020 DC operation single side cooled case to heatsink 0.010 DC operation double side cooled F Mounting force, ± 10% 9800 N (1000) (Kg) wt Approximate weight 83 g Parameter ST303C..C Units Conditions K/W Thermal and Mechanical Specification K/W Case style TO - 200AB (E-PUK) See Outline Table Single SideDouble Side Single SideDouble Side 180° 0.010 0.010 0.007 0.007 120° 0.012 0.012 0.012 0.013 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 Sinusoidal conductionRectangular conduction Conduction angle Units Conditions ΔR thJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)

ST303C..C Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Outline Table Case Style TO-200AB (E-PUK) All dimensions in millimeters (inches) DIA. MAX. 4.75 (0.19) 28 (1.10) 6.5 (0.26) 0.3 (0.01) MIN. 0.3 (0.01) MIN. ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 14.1 / 15.1 (0.56 / 0.59) 25°± 5° GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE 25.3 (0.99) 40.5 (1.59) DIA. MAX. DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 42 (1.65) MAX.