ST303C

ST303C IRF | Alldatasheet

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DISCRETE POWER DIODES and THYRISTORS DATA BOOK

INVERTER GRADE THYRISTORS Hockey Puk Version ST303C..L SERIES Bulletin I25186/A case style TO-200AC (B-PUK) Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

Features

Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capibility Low thermal impedance High speed performance (*)tq = 10 to 20µs for 400 to 800V devices tq = 15 to 30µs for 1000 to 1200V devices IT(AV) 515 A @ T hs 55 °C IT(RMS) 995 A @ T hs 25 °C ITSM @ 50Hz 7950 A @ 60Hz 8320 A I2t @ 50Hz 316 KA 2s @ 60Hz 289 KA 2s V DRM /VRRM 400 to 1200 V tq range (*) 10 to 30 µs TJ - 40 to 125 °C Parameters ST303C..L Units Major Ratings and Characteristics

ST303C..L Series Voltage V DRM /VRRM , maximum VRSM , maximum IDRM /IRRM max. Type number Code repetitive peak voltage non-repetitive peak voltage@ T J = TJ max. V V mA 04 400 500 08 800 900 10 1000 1100 12 1200 1300 Frequency Units 50Hz 1130 950 1800 1540 5660 4990 400Hz 1010 820 1850 1570 2830 2420 1000Hz 680 530 1560 1300 1490 1220 2500Hz 230 140 690 510 540 390 Recovery voltage Vr 50 50 50 50 50 50 Voltage before turn-on Vd VDRM VDRM VDRM Rise of on-state current di/dt 50 50 - - - - A/µ s Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF ELECTRICAL SPECIFICATIONS Voltage Ratings IT(AV) Max. average on-state current 515 (190) A 180° conduction, half sine wave @ Heatsink temperature 55 (85) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 995 DC @ 25°C heatsink temperature double side cooled ITSM Max. peak, one half cycle, 7950 t = 10ms No voltage non-repetitive surge current 8320 A t = 8.3ms reapplied 6690 t = 10ms 100% V RRM 7000 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 316 t = 10ms No voltage Initial TJ = TJ max 289 t = 8.3ms reapplied 224 t = 10ms 100% V RRM 204 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 3160 KA 2√s t = 0.1 to 10ms, no voltage reapplied Parameter ST303C..L Units Conditions On-state Conduction KA 2s ITM 180oel180oel 100µs ITM ITM Current Carrying Capability V A ST303C..L 50

ST303C..L Series Fig. 8 - Maximum Non-repetitive Surge CurrentFig. 7 - Maximum Non-repetitive Surge Current Fig. 6 - On-state Power Loss CharacteristicsFig. 5 - On-state Power Loss Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

ST303C..L Series Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Fig. 13 - Frequency Characteristics

ST303C..L Series Fig. 14 - Frequency Characteristics Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-state Energy Power Loss Characteristics

ST303C..L Series Fig. 17 - Gate Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 V G D IG D (b ) (a ) Tj=25 °C Tj=125 °C Tj=-40 °C (1) (2) In sta n ta n e o u s G a te C u rre n t (A ) Insta n ta ne o u s G a te V o lt a g e (V) Re c ta n g u la r g a te p u lse a ) Re c o m m e n d e d lo a d lin e fo r b ) Re c o m m e n d e d lo a d lin e fo r < =3 0% ra te d d i/ d t : 10 V , 10o h m s ra t e d d i/ d t : 20 V , 1 0o h m s; tr< = 1 µ s t r< = 1 µ s (1) PG M = 1 0W , tp = 20m s (2) PG M = 2 0W , tp = 10m s (3) PG M = 4 0W , tp = 5m s (4) PG M = 6 0W , tp = 3.3 m s (3 ) D e v ic e : ST3 03 C ..L Se rie s Fre q u e n c y Lim ite d b y PG (A V ) (4 )

ST303C..L Series V TM Max. peak on-state voltage 2.16 ITM = 1255A, TJ = TJ max, tp = 10ms sine wave pulse V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of forward slope resistance rt2 High level value of forward slope resistance IH Maximum holding current 600 TJ = 25°C, IT > 30A IL Typical atching current 1000 TJ = 25°C, VA = 12V, Ra = 6Ω, IG = 1A Parameter ST303C..L Units Conditions On-state Conduction 1.44 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.48 (I > π x IT(AV)), TJ = TJ max. V 0.57 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.56 (I > π x IT(AV)), TJ = TJ max. m Ω mA di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM of turned-on current ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM , ITM = 50A DC, tp= 1µs Resistive load Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Switching Parameter ST303C..L Units Conditions

1000 A/µs

td Typical delay time 0.83 Min Max dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM , higher value off-state voltage available on request IRRM Max. peak reverse and off-state IDRM leakage current Parameter ST303C..L Units Conditions Blocking

500 V/µ s

50 mA TJ = TJ max, rated VDRM /VRRM applied PGM Maximum peak gate power 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms +V GM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V Triggering Parameter ST303C..L Units Conditions V TJ = TJ max, tp ≤ 5ms 200 mA 3 V TJ = 25°C, VA = 12V, Ra = 6Ω TJ = TJ max, rated VDRM applied µs (*) tq = 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices. 10 30 W TJ = TJ max, f = 50Hz, d% = 50 tq Max. turn-off time (*)

ST303C..L Series Ordering Information Table 5 6 8 9 ST 30 3 C 12 L H K 1 3 4 7 Device Code 1 2 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) up to 800V dv/dt - tq combinations available dv/dt (V/µs)20 50 100 200 400 tq(µs) 10 CN DN EN FN * HN

12 CM DM EM FM HM

15 CL DL EL FL * HL

20 CK DK EK FK * HK

tq(µs) 15 CL -- -- -- --

18 CP DP -- -- --

25 CJ DJ EJ FJ * HJ

*Standard part number. All other types available only on request. only for 1000/1200V TJ Max. operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 150 R thJ-hsMax. thermal resistance, 0.11 DC operation single side cooled junction to heatsink 0.05 DC operation double side cooled R thC-hsMax. thermal resistance, 0.011 DC operation single side cooled case to heatsink 0.005 DC operation double side cooled F Mounting force, ± 10% 9800 N (1000) (Kg) wt Approximate weight 250 g Parameter ST303C..L Units Conditions K/W Thermal and Mechanical Specification K/W Case style TO - 200AC (B-PUK) See Outline Table Single SideDouble Side Single SideDouble Side 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 K/W 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046 Sinusoidal conductionRectangular conduction Conduction angle Units Conditions ΔR thJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)

ST303C..L Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Outline Table TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 58.5 (2.3 ) D IA . M A X . 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 4.7 (0.18) 27 (1.06 ) M A X . 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 36.5 (1.44) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. Case Style TO-200AC (B-PUK) All dimensions in millimeters (inches)