ST300S16M1L

ST300S IRF | Alldatasheet

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Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling Typical Applications DC motor controls Controlled DC power supplies AC controllers IT(AV) 300 A @ TC IT(RMS) 470 A ITSM @ 50Hz 8000 A @ 60Hz 8380 A I2t @ 50Hz 320 KA2s @ 60Hz 292 KA2s VDRM/VRRM 400 to 2000 V tq typical 100 µs TJ - 40 to 125 Parameters ST300S Units Major Ratings and Characteristics case style TO-209AE (TO-118)

Bulletin I25158 rev. B 01/94 www.irf.com ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 400 500 800 900 1200 1300 1600 1700 1800 1900 2000 2100 ST300S IT(AV) Max. average on-state current 300 A 180° conduction, half sine wave @ Case temperature IT(RMS) Max. RMS on-state current 470 A DC @ 64°C case temperature ITSM Max. peak, one-cycle 8000 t = 10ms No voltage non-repetitive surge current 8380 t = 8.3ms reapplied 6730 t = 10ms 100% VRRM 7040 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 320 t = 10ms No voltage Initial TJ = TJ max. 292 t = 8.3ms reapplied 226 t = 10ms 100% VRRM 207 t = 8.3ms reapplied I2√t Maximum I2√t for fusing 3200 KA2√s t = 0.1 to 10ms, no voltage reapplied VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage 1.66 V Ipk= 940A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Typical latching current 1000 0.97 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.74 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.73 (I > π x IT(AV)),TJ = TJ max. Parameter ST300S Units Conditions 0.98 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA2s mΩ mA TJ = 25°C, anode supply 12V resistive load V A

Bulletin I25158 rev. B 01/94 www.irf.com Parameter ST300S Units Conditions Switching µs dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current Blocking 500 V/µs TJ = TJ max. linear to 80% rated VDRM Parameter ST300S Units Conditions mA TJ = TJ max, rated VDRM/V RRM applied PGM Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT DC gate current required TJ = - 40°C to trigger mA TJ = 25°C TJ = 125°C VGT DC gate voltage required TJ = - 40°C to trigger V TJ = 25°C TJ = 125°C IGD DC gate current not to trigger 10.0 mA Parameter ST300S Units Conditions 5.0 Triggering VGD DC gate voltage not to trigger 0.25 V TJ = TJ max TYP. MAX. 200 100 200 2.5 1.8 1.1 Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied V TJ = TJ max, tp ≤ 5ms Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied W di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs td Typical delay time 1.0 tq Typical turn-off time 100 1000 A/µs

Bulletin I25158 rev. B 01/94 www.irf.com TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% 48.5 (425) wt Approximate weight 535 g Case style TO - 209AE (TO-118) See Outline Table Parameter ST300S Units Conditions 0.10 DC operation 0.03 Mounting surface, smooth, flat and greased Thermal and Mechanical Specification Non lubricated threads K/W Nm (lbf-in) ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) 180° 0.011 0.008 TJ = TJ max. 120° 0.013 0.014 90° 0.017 0.018 K/W 60° 0.025 0.026 30° 0.041 0.042 Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Ordering Information Table Thyristor Essential part number 0 = Converter grade S = Compression bonding Stud Voltage code: Code x 100 = VRRM (See Voltage Rating Table) P = Stud base 16UNF threads M = Stud base metric threads (M24 x 1.5) 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 3 = Threaded top terminal 3/8" 24UNF-2A Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) Device Code ST S P

Bulletin I25158 rev. B 01/94 www.irf.com Fast-on Terminals Case Style TO-209AE (TO-118) All dimensions in millimeters (inches) Outline Table Case Style TO-209AE (TO-118) with top thread terminal 3/8" All dimensions in millimeters (inches) RED CATHODE RED SILICON RUBBER 10.5 (0.41) WHITE GATE 4.3 (0.17) DIA. CERAMIC HOUSING WHITE SHRINK NOM. 47 (1.85) MAX. 245 (9.65) 38 (1.50) MAX. DIA. * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX. 22 (0.87) MAX. MAX. 21 (0.82) MAX. SW 45 FLEXIBLE LEAD 4.5 (0.18) MAX. C.S. 50mm (0.078 s.i.) 255 (10.04) RED SHRINK 22 (0.86) MIN. 49 (1.92) MAX. 3/4"16 UNF-2A 27.5 (1.08) 9.5 (0.37) MIN. 47 (1.85) 27.5 (1.08) 77.5 (3.05) 80.5 (3.17) 38 (1.5) DIA. MAX. MAX. MAX. MAX. CERAMIC HOUSING SW 45 * FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX. 21 (0.83) 3/4"-16UNF-2A * 25 (0.98) 3/8"-24UNF-2A 17 (0.67) DIA. AMP. 280000-1 REF-250

Bulletin I25158 rev. B 01/94 www.irf.com Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 100 125 Maximum Allowable Ambient Temperature (°C)

0.08 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.6 K/W

1.2 K/W

R = 0.03 K/W - Delta R thSA

0.12 K/W

180° 120° 90° 60° 30° RMS Limit Conduction Angle Maximum Average On-state Power Loss (W) Average On-state Current (A) ST300S Series T = 125°C J 100 125 Maximum Allowable Ambient Temperature (°C) R = 0.03 K/W - Delta R thSA 180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) ST300S Series T = 125°C J 100 110 120 130 100 200 300 400 500 DC 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period ST300S Series R (DC) = 0.10 K/W thJC 100 110 120 130 100 150 200 250 300 350 Maximum Allowable Case Temperature (°C) 30° 60° 90° 120° 180° Average On-state Current (A) Conduction Angle ST300S Series R (DC) = 0.10 K/W thJC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Bulletin I25158 rev. B 01/94 www.irf.com Fig. 7 - On-state Voltage Drop Characteristics 100 1000 10000 T = 25°C J Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125°C J ST300S Series 0.001 0.01 0.1 0.001 0.01 0.1 Square Wave Pulse Duration (s) thJC ST300S Series Transient Thermal Impedance Z (K/W) Steady State Value R = 0.10 K/W (DC Operation) thJC Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) ST300S Series Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any Rated Load Condition And With Rated V Applied Following Surge. RRM 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 0.01 0.1 Pulse Train Duration (s) Versus Pulse Train Duration. Control Peak Half Sine Wave On-state Current (A) ST300S Series Initial T = 125°C No Voltage Reapplied Rated V Reapplied J RRM Maximum Non Repetitive Surge Current Of Conduction May Not Be Maintained.

Bulletin I25158 rev. B 01/94 www.irf.com Fig. 9 - Gate Characteristics 0.1 100 0.001 0.01 0.1 100 VGD IGD (b) (a) Tj=25 °C Tj=125 °C Tj=-40 °C (2) (3) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for b) Recommended load line for <=30% rated di/dt : 10V, 10ohms Frequency Limited by PG(AV) rated di/dt : 20V, 10ohms; tr<=1 µs tr<=1 µs Device: ST300S Series (1) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms (4)