ST300CLPBF VISHAY | Alldatasheet
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Document Number: 94405 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 1 Phase Control Thyristors (Hockey PUK Version), 560 A ST300CLPbF Series Vishay High Power Products
FEATURES
- Center amplifying gate Metal case with ceramic insulator International standard ca se TO-200AC (B-PUK) Lead (Pb)-free Designed and qualified for industrial level TYPICAL APPLICATIONS DC motor controls Controlled DC power supplies AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 560 A TO-200AC (B-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 560 A Ths 55 °C IT(RMS) 1115 A Ths 25 °C ITSM
50 Hz 8000
A
60 Hz 8380
50 Hz 320
60 Hz 292
tq Typical 100 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST300C..L 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100
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Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 560 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 560 (275) A 55 (75) °C Maximum RMS on-state current I T(RMS) DC at 25 °C heatsink temperature double side cooled 1115 AMaximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 8000 t = 8.3 ms 8380 t = 10 ms 100 % V RRM reapplied 6730 t = 8.3 ms 7040 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 320 kA2s t = 8.3 ms 292 t = 10 ms 100 % VRRM reapplied 226 t = 8.3 ms 207 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 3200 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.97 V High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.74 mΩ High level value of on-state slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 0.73 Maximum on-state voltage V TM Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.18 V Maximum holding current I H TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current I L 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM
1000 A/µs
Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time t q ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
Document Number: 94405 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 3 ST300CLPbF Series Phase Control Thyristors (Hockey PUK Version), 560 A Vishay High Power Products Note The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power P GM TJ = TJ maximum, tp ≤ 5 ms 10.0 W Maximum average gate power P G(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum peak positive gate voltage + V GM TJ = TJ maximum, tp ≤ 5 ms V Maximum peak negative gate voltage - V GM 5.0 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units
12 V anode to cathode applied
J = 25 °C 100 200 TJ = 125 °C 50 - DC gate voltage required to trigger V GT TJ = - 40 °C 2.5 - VTJ = 25 °C 1.8 3.0 TJ = 125 °C 1.1 - DC gate current not to trigger I GD TJ = TJ maximum Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 10.0 mA DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to heatsink R thJ-hs DC operation single side cooled 0.11 K/W DC operation double side cooled 0.05 Maximum thermal resistance, case to heatsink R thC-hs DC operation single side cooled 0.011 DC operation double side cooled 0.006 Mounting force, ± 10 % 9800 (1000) N (kg) Approximate weight 250 g Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK) ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.012 0.010 0.008 0.008 TJ = TJ maximum K/W 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046
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Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 560 A Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics Fig. 6 - On-State Power Loss Characteristics Average On-state Current (A) Maximum Allowable Heatsink Temperature (°C) 100 110 120 130 0 100 200 300 400 500 30° 60° 90° 120° 180° Conduction Angle ST300C..L Series (Single Side Cooled) R (DC) = 0.11 K/W thJ-hs Average On-state Current (A) Maximum Allowable Heatsink Temperature (°C) 100 110 120 130 0 100 200 300 400 500 600 700 DC 30° 60° 90° 120° 180° Conduction Period ST300C..L Series (Single Side Cooled) R (DC) = 0.11 K/W thJ-hs Maximum Allowable Heatsink Temperature (°C) Average On-state Current (A) 100 110 120 130 0 200 400 600 800 30° 60° 90° 120° 180° Conduction Angle ST300C..L Series (Double Side Cooled) R (DC) = 0.05 K/W thJ-hs Average On-state Current (A) Maximum Allowable Heatsink Temperature (°C) 100 110 120 130 0 200 400 600 800 1000 1200 DC 30° 60° 90° 120° 180° Conduction Period ST300C..L Series (Double Side Cooled) R (DC) = 0.05 K/W thJ-hs Maximum Average On-state Power Loss (W) Average On-state Current (A) 200 400 600 800 1000 1200 1400 1600 0 100 200 300 400 500 600 700 180° 120° 90° 60° 30° RMS Limit Conduction Angle ST300C..L Series T = 125 °C J Average On-state Current (A) Maximum Average On-state Power Loss (W) 200 400 600 800 1000 1200 1400 1600 1800 0 200 400 600 800 1000 1200 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period ST300C..L Series T = 125 °C J
Document Number: 94405 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 5 ST300CLPbF Series Phase Control Thyristors (Hockey PUK Version), 560 A Vishay High Power Products Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - On-State Voltage Drop Characteristcs Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 11 0 1 0 0 ST300C..L Series At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Number Of Equal Amplitude Half Cycle Current Pulses (N)Peak Half Sine Wave On-state Current (A) 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 0.01 0.1 1 Versus Pulse Train Duration. Control ST300C..L Series Maximum Non Repetitive Surge Current Of Conduction May Not Be Maintained. Initial Tj = 125 °C No Voltage Reapplied Rated Vrrm Reapplied Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) 100 1000 10000 0123456789 T = 25 °C J T = 125 °C J ST300C..L Series Instantaneous On-state Voltage (V) )A( tnerruC etats-nO suoenatnatsnI 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj=25 °C Tj=125 °C Tj=-40 °C (2) (3) a) Recommended load line for b) Recommended load line for <=30% rated di/dt : 10V, 10ohms Frequency Limited by PG(AV) rated di/dt : 20V, 10ohms; tr<=1 μs tr<=1 μs (1) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms Rectangular gate pulse Device: ST300C..L Series (4) Square Wave Pulse Duration (s) Transient Thermal Impedance Z thJ-hs (K/W)
www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 94405
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Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 560 A Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Steady State Value R = 0.11 K/W (Single Side Cooled) R = 0.05 K/W (Double Side Cooled) (DC Operation) thJ-hs thJ-hs ST300C..L Series Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) - Thyristor - Essential part number - 0 = Converter grade - Lead (Pb)-free - C = Ceramic PUK - Voltage code x 100 = V RRM (see Voltage Ratings table) - L = PUK case TO-200AC (B-PUK) - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) - Critical dV/dt: None = 500 V/μs (standard selection) L = 1000 V/μs (special selection) Device code 51 324 6789 ST 30 0 C 20 L 1 - PbF LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95076
Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.