ST180S12M0

ST180S IRF | Alldatasheet

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DISCRETE POWER DIODES and THYRISTORS DATA BOOK

PHASE CONTROL THYRISTORS Stud Version ST180S SERIES Bulletin I25165/B

Features

Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AB (TO-93) Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling Typical Applications DC motor controls Controlled DC power supplies AC controllers IT(AV) 200 A @ T C 85 °C IT(RMS) 314 A ITSM @ 50Hz 5000 A @ 60Hz 5230 A I2t @ 50Hz 125 KA 2s @ 60Hz 114 KA 2s V DRM /VRRM 400 to 2000 V tq typical 100 µs TJ - 40 to 125 °C Parameters ST180S Units Major Ratings and Characteristics case style TO-209AB (TO-93)

Voltage V DRM /VRRM , max. repetitive VRSM , maximum non- IDRM /IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T J = TJ max V V mA 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 ST180S 30 IT(AV) Max. average on-state current 200 A 180° conduction, half sine wave @ Case temperature 85 °C IT(RMS) Max. RMS on-state current 314 A DC @ 76°C case temperature ITSM Max. peak, one-cycle 5000 t = 10ms No voltage non-repetitive surge current 5230 t = 8.3ms reapplied 4200 t = 10ms 100% V RRM 4400 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 125 t = 10ms No voltage Initial TJ = TJ max. 114 t = 8.3ms reapplied 88 t = 10ms 100% V RRM 81 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 1250 KA 2√s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance V TM Max. on-state voltage 1.75 V Ipk= 570A, TJ = 125°C, tp = 10ms sine pulse IH Maximum holding current 600 IL Max. (typical) latching current1000 (300) 1.08 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.18 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.14 (I > π x IT(AV)),TJ = TJ max. Parameter ST180S Units Conditions 1.14 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA 2s V m Ω mA TJ = TJ max, anode supply 12V resistive load A di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω , tr ≤ 1µs of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM , TJ = 25°C ITM = 300A, TJ = TJ max, di/dt = 20A/µs , VR = 50V dv/dt = 20V/µs , Gate 0V 100Ω, tp = 500µs Parameter ST180S Units Conditions td Typical delay time 1.0 Switching tq Typical turn-off time 100 µs

1000 A/µs

Fig. 3 - On-state Power Loss Characteristics Fig. 2 - Current Ratings CharacteristicsFig. 1 - Current Ratings Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - On-state Voltage Drop Characteristics

Fig. 9 - Gate Characteristics

dv/dt Maximum critical rate of rise of off-state voltage IDRM Max. peak reverse and off-state IRRM leakage current Blocking

500 V/µs TJ = TJ max linear to 80% rated VDRM

Parameter ST180S Units Conditions 30 mA TJ = TJ max, rated V DRM /VRRM applied PGM Maximum peak gate power 10 TJ = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT DC gate current required TJ = - 40°C to trigger mA TJ = 25°C TJ = 125°C VG T DC gate voltage required TJ = - 40°C to trigger V TJ = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA Parameter ST180S Units Conditions 5.0 Triggering VGD DC gate voltage not to trigger 0.25 V TJ = TJ max TYP. MAX. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied W V TJ = TJ max, tp ≤ 5ms TJ Max. operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 150 R thJC Max. thermal resistance, junction to case R thCS Ma x. thermal resistance, case to heatsink T Mounting torque, ± 10% 31 (275) 24.5 (210) wt Approximate weight 280 g Case style TO - 209AB (TO-93) See Outline Table Parameter ST180S Units Conditions

0.105 DC operation

0.04 Mounting surface, smooth, flat and greased

Thermal and Mechanical Specification K/W Nm (lbf-in) Lubricated threads Non lubricated threads

ΔR thJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) 180° 0.015 0.012 TJ = TJ max. 120° 0.019 0.020 90° 0.025 0.027 K/W 60° 0.036 0.037 30° 0.060 0.060 Conduction angleSinusoidal conductionRectangular conductionUnits Conditions Ordering Information Table 51 2 3 4 ST 18 0 S 20 P 0 76 8 9 Device Code 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - P = Stud base 16UNF threads M = Stud base metric threads (M16 x 1.5) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) 9 - Critical dv/dt:None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection)

Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) Outline Table WHITE SHRINK RED SHRINK RED CATHODE RED SILICON RUBBER C.S. 0.4mm (0.0006 s.i.) M A X . 90 (3 .54) M IN . 4.3 (0.17) DIA. 19 (0.75) MAX. 38 .5 (1.52) M A X . 16 (0.63) M A X . 8.5 (0.33) DIA. GLASS METAL SEAL 28.5 (1.12) MAX. DIA. * FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX. SW 32 C.S. 25mm 2 (0.039 s.i.) FLEXIBLE LEAD 4 (0.16) MAX. 22 (0.86) MIN. 35 (1.38) MAX. 3/4"-16UNF-2A * 27.5 (1 .0 8) 9.5 (0.37) MIN. WHITE GATE WHITE SHRINK RED SHRINK RED CATHODE RED SILICON RUBBER (0.0006 s.i.) 38 .5 (1 .52 ) M A X . CERAMIC HOUSING90 (3.5 4) M IN . 4.3 (0.17) DIA. 19 (0.75) MAX. 8.5 (0.33) DIA. * FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX. C.S. 25mm 2 (0.039 s.i.) FLEXIBLE LEAD 4 (0.16) MAX. 22 (0.86) MIN. M A X . 35 (1.38) MAX. 3/4"-16UNF-2A * 27.5 (1.08) SW 32 27.5 (1.08) MAX. DIA. WHITE GATE 9.5 (0.37) MIN. 16 (0.6 3) M A X . AMP. 280000-1 REF-250

Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) GLASS-METAL SEAL 3 (0.12) 80 (3 .1 5) M A X . DIA. 28.5 (1.12) MAX. FLAG TERMINALS 1.5 (0.06) DIA. SW 32 22 (0.89) 14 (0.55) 1 6 (0.63 ) M A X . 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3 (0.12) 8 0 (3 .15 ) M A X . DIA. 27.5 (1.08) MAX. 1 6 (0 .63 ) M A X . FLAG TERMINALS 1.5 (0.06) DIA. SW 32 22 (0.89) 14 (0.55) *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3/4"-16UNF-2A*