ST180CPBF VISHAY | Alldatasheet

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Document Number: 94396 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 1 Phase Control Thyristors (Hockey PUK Version), 350 A ST180CPbF Series Vishay High Power Products

FEATURES

  • Center amplifying gate  Metal case with ceramic insulator  International standard case TO-200AB (A-PUK)  Lead (Pb)-free  Designed and qualified for industrial level TYPICAL APPLICATIONS  DC motor controls  Controlled DC power supplies  AC controllers ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IT(AV) 350 A TO-200AB (A-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 350 A Ths 55 °C IT(RMS) 660 A Ths 25 °C ITSM

50 Hz 5000

A

60 Hz 5230

50 Hz 125

60 Hz 114

tq Typical 100 µs TJ - 40 to 125 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ST180C..C 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100

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2 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 350 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 350 (140) A 55 (85) °C Maximum RMS on-state current I T(RMS) DC at 25 °C heatsink temperature double side cooled 660 AMaximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 5000 t = 8.3 ms 5230 t = 10 ms 100 % V RRM reapplied 4200 t = 8.3 ms 4400 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 125 kA2s t = 8.3 ms 114 t = 10 ms 100 % VRRM reapplied t = 8.3 ms 81 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 1250 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.08 V High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.14 Low level value of on-state slope resistance r t1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.18 mΩ High level value of on-state slope resistance r t2 (I > π x IT(AV)), TJ = TJ maximum 1.14 Maximum on-state voltage V TM Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V Maximum holding current I H TJ = 25 °C, anode supply 12 V resistive load 600 mA Maximum (typical) latching current I L 1000 (300) SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM

1000 A/µs

Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time t q ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt T J = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA

Document Number: 94396 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 3 ST180CPbF Series Phase Control Thyristors (Hockey PUK Version), 350 A Vishay High Power Products Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum peak gate power P GM TJ = TJ maximum, tp ≤ 5 ms 10 W Maximum average gate power P G(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 Maximum peak positive gate current I GM TJ = TJ maximum, tp ≤ 5 ms 3.0 A Maximum peak positive gate voltage + V GM 20 V Maximum peak negative gate voltage - V GM 5.0 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 180 - mATJ = 25 °C 90 150 TJ = 125 °C 40 - DC gate voltage required to trigger V GT TJ = - 40 °C 2.9 - VTJ = 25 °C 1.8 3.0 TJ = 125 °C 1.2 - DC gate current not to trigger I GD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 10 mA DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range TJ - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs DC operation single side cooled 0.17 K/W DC operation double side cooled 0.08 Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, ± 10 % 4900 (500) N (kg) Approximate weight 50 g Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.015 0.015 0.011 0.011 TJ = TJ maximum K/W 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061

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Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 350 A Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics Fig. 6 - On-State Power Loss Characteristics 110 100 130 Maximum Allowable Heatsink Temperature (°C) Average On-State Current (A) 120 100 150 200 250 ST180C..C Series (Single side cooled) R thJ-hs (DC) = 0.17 K/W Ø Conduction angle 60° 30° 90° 120° 180° 0 200 400 Maximum Allowable Heatsink Temperature (°C) Average On-State Current (A) 300100 110 100 130 120 ST180C..C Series (Single side cooled) R thJ-hs (DC) = 0.17 K/W 30° 60° 90° 120° 180° Ø Conduction period DC Maximum Allowable Heatsink Temperature (°C) Average On-State Current (A) 50 100 150 200 250 300 350 400 450 Ø Conduction angle 60° 30° 90° 120° 180° ST180C..C Series (Double side cooled) R thJ-hs (DC) = 0.17 K/W110 100 130 120 0 200 400 500 600 700 Maximum Allowable Heatsink Temperature (°C) Average On-State Current (A) 300100 110 100 130 120 ST180C..C Series (Double side cooled) R thJ-hs (DC) = 0.08 K/W 30° 60° 90° 120° 180° Ø Conduction period DC 700 600 100 200 300 400 500 900 1000 Maximum Average On-State Power Loss (W) Average On-State Current (A) 800 100 150 200 250 300 350 400 450 180° 120° 90° 60° 30° RMS limit Ø Conduction angle ST180C..C Series T J = 125 °C 700 600 100 200 300 400 500 900 1000 1100 1200 1300 Maximum Average On-State Power Loss (W) Average On-State Current (A) 800 100 200 300 400 500 600 700 DC 180° 120° 90° 60° 30° RMS limit ST180C..C Series TJ = 125 °C Ø Conduction period

Document Number: 94396 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 11-Aug-08 5 ST180CPbF Series Phase Control Thyristors (Hockey PUK Version), 350 A Vishay High Power Products Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - On-State Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 2000 1 10 100 2500 3500 4000 Number of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-State Current (A) 4500 3000 At any rated load condition and with rated VRRM applied following surge ST180C..C Series Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 0.01 0.1 1 Pulse Train Duration (s) Peak Half Sine Wave On-State Current (A) 2000 2500 3500 4000 4500 5000 3000 No Voltage Reapplied Rated VRRM Reapplied Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C ST180C..C Series 100 123456 1000 10 000 Instantaneous On-State Current (A) Instantaneous On-State Voltage (V) TJ = 25 °C TJ = 125 °C ST180C..C Series 0.001 0.01 0.1 0.001 Square Wave Pulse Duration (s) ZthJ-hs - Transient Thermal Impedance (K/W) 0.01 0.1 1 10 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) R thJ-hs = 0.08 K/W (Double side cooled) (DC operation) ST180C..C Series

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6 Revision: 11-Aug-08

Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 350 A Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 100 0.001 Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) 0.01 0.1 1 10 100 TJ = 25 °C TJ = 40 °C TJ = 125 °C (b) (1) (2) (3) (4) (1) PGM = 10 W, tp = 4 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 40 W, tp = 1 ms (4) PGM = 60 W, tp = 0.66 ms Frequency limited by PG(AV) VGD IGD Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; t r ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω t r ≤ 1 µs Device: ST180C..C Series (a) - Thyristor - Essential part number - 0 = Converter grade - Lead (Pb)-free - C = Ceramic PUK - Critical dV/dt: - Voltage code x 100 = V RRM (see Voltage Ratings table) - C = PUK case TO-200AB (A-PUK) - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) Device code 51 324 6789 ST 18 0 C 20 C 1 - PbF LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95074

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.