ST180C16C2L

ST180C12C0 IRF | Alldatasheet

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Metal case with ceramic insulator International standard case TO-200AB (A-PUK) Typical Applications DC motor controls Controlled DC power supplies AC controllers IT(AV) 350 A @ Ths 55 °C IT(RMS) 660 A @ Ths 25 °C ITSM @ 50Hz 5000 A @ 60Hz 5230 A I2t@ 50Hz 125 KA 2s @ 60Hz 114 KA 2s VDRM/VRRM 400 to 2000 V tq typical 100 µs TJ - 40 to 125 °C Parameters ST180C..C Units Major Ratings and Characteristics case style TO-200AB (A-PUK)

ST180C..C Series Bulletin I25164 rev. C 02/00 www.irf.com ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/VRRM, max. repetitive V RSM , maximum non- I DRM/IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max VV m A 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 ST180C..C 30 IT(AV) Max. average on-state current 350 (140) A 180 ° conduction, half sine wave @ Heatsink temperature 55 (85) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 660 @ 25 °C heatsink temperature double side cooled ITSM Max. peak, one-cycle 5000 t = 10ms No voltage non-repetitive surge current 5230 A t = 8.3ms reapplied 4200 t = 10ms 100% V RRM 4400 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 125 t = 10ms No voltage Initial T J = TJ max. 114 t = 8.3ms reapplied 88 t = 10ms 100% V RRM 81 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 1250 KA 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO) 1 Low level value of threshold voltage VT(TO) 2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage 1.96 V I pk= 750A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Max. (typical) latching current 1000 (300) 1.08 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.18 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.14 (I > π x IT(AV)),TJ = TJ max. Parameter ST180C..C Units Conditions 1.14 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA2s V mΩ mA T J = TJ max, anode supply 12V resistive load

ST180C..C Series Bulletin I25164 rev. C 02/00 www.irf.com di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, tr ≤ 1µs of turned-on current T J = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 300A, TJ = TJ max, di/dt = 20A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs Parameter ST180C..C Units Conditions td Typical delay time 1.0 Switching tq Typical turn-off time 100 µs

1000 A/µs

dv/dt Maximum critical rate of rise of off-state voltage IDRM Max. peak reverse and off-state IRRM leakage current Blocking

500 V/ µsT J = TJ max linear to 80% rated V DRM

Parameter ST180C..C Units Conditions 30 mA T J = TJ max, rated V DRM/VRRM applied PGM Maximum peak gate power 10 T J = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.0 T J = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 3.0 A T J = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage TJ = - 40°C mA T J = 25°C TJ = 125°C TJ = - 40°C VT J = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA Parameter ST180C..C Units Conditions 5.0 Triggering TYP. MAX. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - VGD DC gate voltage not to trigger 0.25 V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied TJ = TJ max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode appliedV GT DC gate voltage required to trigger IGT DC gate current required to trigger W VT J = TJ max, tp ≤ 5ms

ST180C..C Series Bulletin I25164 rev. C 02/00 www.irf.com TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.17 DC operation single side cooled junction to heatsink 0.08 DC operation double side cooled RthC-hs Max. thermal resistance, 0.033 DC operation single side cooled case to heatsink 0.017 DC operation double side cooled F Mounting force, ± 10% 4900 N (500) (Kg) wt Approximate weight 50 g Parameter ST180C..C Units Conditions K/W Thermal and Mechanical Specification Case style TO - 200AB (A-PUK) See Outline Table K/W ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Single Side Double Side Single Side Double Side 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 K/W 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 Sinusoidal conduction Rectangular conductionConduction angle Units Conditions 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) Ordering Information Table Device Code 51 2 3 4 ST 18 0 C 20 C 1 76 8

ST180C..C Series Bulletin I25164 rev. C 02/00 www.irf.com Outline Table Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics DIA. MAX. 4.75 (0.19) 28 (1.10) 6.5 (0.26) 19 (0.75) 0.3 (0.01) MIN. 0.3 (0.01) MIN. 13.7 / 14.4 (0.54 / 0.57) 25°± 5° GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 42 (1.65) MAX. Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 100 110 120 130 0 50 100 150 200 250 30˚ 60˚ 90˚ 120˚ 180˚ Conduction Angle ST180C..C Series (Single Side Cooled) R (DC) = 0.17 K/WthJ-hs Average On-state Current (A) Maximum Allowable Heatsink Temperature (°C) Average On-state Current (A) Maximum Allowable Heatsink Temperature (°C) 100 110 120 130 0 100 200 300 400 DC 30˚ 60˚ 90˚ 120˚ 180˚ Conduction Period ST180C..C Series (Single Side Cooled) R (DC) = 0.17 K/W thJ-hs

ST180C..C Series 6 www.irf.com Bulletin I25164 rev. C 02/00 Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Average On-state Current (A) Maximum Allowable Heatsink Temperature (°C) Average On-state Current (A) Average On-state Current (A) Maximum Average On-state Power Loss (W) Average On-state Current (A) Maximum Average On-state Power Loss (W) Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Peak Half Sine Wave On-state Current (A) Maximum Allowable Heatsink Temperature (°C) 100 110 120 130 0 50 100 150 200 250 300 350 400 450 30˚ 60˚ 90˚ 120˚ 180˚ Conduction Angle ST180C..C Series (Double Side Cooled) R (DC) = 0.08 K/WthJ-hs 100 110 120 130 0 100 200 300 400 500 600 700 DC 30˚ 60˚ 90˚ 120˚ 180˚ Conduction Period ST180C..C Series (Double Side Cooled) R (DC) = 0.08 K/W thJ-hs 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 350 400 450 180˚ 120˚ 90˚ 60˚ 30˚ RMS Limit Conduction Angle ST180C..C Series T = 125˚CJ 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 0 100 200 300 400 500 600 700 DC 180˚ 120˚ 90˚ 60˚ 30˚ RMS Limit Conduction Period ST180C..C Series T = 125˚CJ 2000 2500 3000 3500 4000 4500 1 10 100 Initial T = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J ST180C..C Series At Any Rated Load Condition And With Rated V Applied Following Surge.RRM 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. ST180C..C Series Maximum Non Repetitive Surge Current Initial T = 125˚C No Voltage Reapplied Rated V ReappliedRRM J

ST180C..C Series 7www.irf.com Bulletin I25164 rev. C 02/00 Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance Z thJ-hs Characteristics Fig. 11 - Gate Characteristics Instantaneous On-state Voltage (V) Instantaneous On-state Current (A) Square Wave Pulse Duration (s) Transient Thermal Impedance Z (K/W)thJ-hs Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) 100 1000 10000 123456 T = 25˚CJ T = 125˚CJ ST180C..C Series 0.001 0.01 0.1 0.001 0.01 0.1 1 10 ST180C..C Series Steady State Value R = 0.17 K/W (Single Side Cooled) R = 0.08 K/W (Double Side Cooled) (DC Operation) thJ-hs thJ-hs 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj=25 ˚C Tj=125 ˚C Tj=-40 ˚C (1) (2) (3) a) Recommended load line for b) Recommended load line for <=30% rated di/dt : 10V, 10ohms Frequency Limited by PG(AV) rated di/dt : 20V, 10ohms; tr<=1 µs tr<=1 µs (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms Device: ST180C..C Series Rectangular gate pulse (4)