ST1802FH STMICROELECTRONICS | Alldatasheet
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Technical content
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS n NEW SERIES, ENHANCHED PERFORMANCE n EASY MOUNTING n HIGH VOLTAGE CAPABILITY ( > 1500 V ) n HIGH SWITCHING SPEED n TIGTHER hfe CONTROL n IMPROVED RUGGEDNESS n FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION (U.L. COMPLIANT) n CREEPAGE DISTANCE PATH > 4 mm APPLICATIONS: n HORIZONTAL DEFLECTION FOR COLOR TV
DESCRIPTION
The device is manufactured using Diffused Collector Technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM August 2001 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 1500 V V CEO Collector-Emitter Voltage (IB = 0) 600 V V EBO Emitter-Base Voltage (IC =0 ) 7 V IC Collector Current 10 A ICM Collector Peak Current (tp <5m s ) 1 5 A IB Base Current 4 A P tot Total Dissipation at Tc =2 5 oC4 0 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC TO-220FH
R thj-case Thermal Resistance Junction-case Max 3.125 oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE =0 ) V CE =1 5 0 0V V CE =1 5 0 0V T j = 125 oC mA mA IEBO Emitter Cut-off Current (IC =0 ) V EB =7V 1 m A V CEO(sus )∗ Collector-Emitter Sustaining Voltage B =0 ) IC = 100 mA L = 25 mH 600 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC =4A I B =0 . 8A IC =4A I B =1 . 2A 1.5 V V BE(sat)∗ Base-Emitter Saturation Voltage IC =4 . 5A I B =1A 1 . 2 V hFE ∗ DC Current Gain I C =1A V CE =5V IC =5A V CE =5V 4 ts tf INDUCTIVE LOAD Storage Time Fall Time I C =4A I Bon(END) =1A LB =5 µHV BB =- 2 . 5V f=1 6K H z 0.3 0.5 µ s µ s ∗ Pulsed: Pulse duration = 300µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance ST1802FH
Collector Emitter Saturation Voltage Power Losses At 16 KHz Base Emitter Saturation Voltage DC Current Gain Switching Time Inductive Load ST1802FH
Inductive Load Switching Test Circuits. ST1802FH
DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.3 1.8 0.051 0.070 F2 1.3 1.8 0.051 0.070 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L5 3.4 0.134 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 L8 14.5 15 0.570 0.590 L9 2.4 0.094 P011W TO-220FH (Fully plastic High voltage) MECHANICAL DATA ST1802FH
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices orsystems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com ST1802FH