ST110S04P1V

ST110S08P0V IRF | Alldatasheet

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Hermetic metal case with ceramic insulator (Glass-metal seal over 1200V) International standard case TO-209AC (TO-94) Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling Typical Applications DC motor controls Controlled DC power supplies AC controllers IT(AV) 110 A @ TC 90 °C IT(RMS) 175 A ITSM @ 50Hz 2700 A @ 60Hz 2830 A I2t@ 50Hz 36.4 KA 2s @ 60Hz 33.2 KA 2s VDRM /VRRM 400 to 1600 V tq typical 100 µs TJ - 40 to 125 °C Parameters ST110S Units Major Ratings and Characteristics case style TO-209AC (TO-94) 110A PHASE CONTROL THYRISTORS Stud Version ST110S SERIES Bulletin I25167 rev. C 03/03 www.irf.com

www.irf.com Bulletin I25167 rev. C 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/VRRM, max. repetitive V RSM , maximum non- I DRM/IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max VV m A 04 400 500 ST110S 08 800 900 20 12 1200 1300 16 1600 1700 IT(AV) Max. average on-state current 110 A 180° conduction, half sine wave @ Case temperature 90 °C IT(RMS) Max. RMS on-state current 175 A DC @ 85°C case temperature ITSM Max. peak, one-cycle 2700 t = 10ms No voltage non-repetitive surge current 2830 t = 8.3ms reapplied 2270 t = 10ms 100% V RRM 2380 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 36.4 t = 10ms No voltage Initial T J = TJ max. 33.2 t = 8.3ms reapplied 25.8 t = 10ms 100% V RRM 23.5 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 364 KA 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO)1 Low level value of threshold voltage VT(TO) 2 High level value of threshold voltage rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance VTM Max. on-state voltage 1.52 V I pk= 350A, TJ = TJ max, tp = 10ms sine pulse IH Maximum holding current 600 IL Typical latching current 1000 0.90 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.79 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.81 (I > π x IT(AV)),TJ = TJ max. Parameter ST110S Units Conditions 0.92 (I > π x IT(AV)),TJ = TJ max. On-state Conduction KA2s V mΩ mA TJ = 25°C, anode supply 12V resistive load A di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω , tr ≤ 1µs of turned-on current T J = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 100A, TJ = TJ max, di/dt = 10A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100 Ω, tp = 500µs Parameter ST110S Units Conditions td Typical delay time 2.0 Switching tq Typical turn-off time 100 µs

500 A/µs

www.irf.com Bulletin I25167 rev. C 03/03 dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current Blocking 500 V/µs T J = TJ max. linear to 80% rated VDRM Parameter ST110S Units Conditions 20 mA T J = TJ max, rated VDRM/VRRM applied TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% 15.5 Non lubricated threads (137)

14 Lubricated threads

(120) wt Approximate weight 130 g Parameter ST110S Units Conditions

0.195 DC operation

0.08 Mounting surface, smooth, flat and greased

Thermal and Mechanical Specification PGM Maximum peak gate power 5 T J = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 1 T J = TJ max, f = 50Hz, d% = 50 IGM Max. peak positive gate current 2.0 A T J = TJ max, tp ≤ 5ms +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT DC gate current required T J = - 40°C to trigger mA T J = 25°C TJ = 125°C VGT DC gate voltage required T J = - 40°C to trigger V T J = 25°C TJ = 125°C IGD DC gate current not to trigger 10 mA Parameter ST110S Units Conditions 5.0 Triggering VGD DC gate voltage not to trigger 0.25 V TJ = TJ max TYP. MAX. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied W K/W Nm (lbf-in) Case style TO - 209AC (TO-94) See Outline Table VT J = TJ max, tp ≤ 5ms

www.irf.com Bulletin I25167 rev. C 03/03 Ordering Information Table 53 4 ST 11 0 S 16 P 0 V 76 8 ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Device Code 1 2 180° 0.035 0.025 120° 0.041 0.042 90° 0.052 0.056 K/W T J = T J max. 60° 0.076 0.079 30° 0.126 0.127 Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - P = Stud base 1/2"-20UNF-2A threads 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V)

www.irf.com Bulletin I25167 rev. C 03/03 Fast-on Terminals Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) Outline Table C.S. 0.4 mm 2 10 (0.39) RED SHRINK RED CATHODE RED SILICON RUBBER 4.3 (0.17) DIA 21 (0.83) 12.5 (0.49) MAX. 157 (6.18) 170 (6.69) (.0006 s.i.) 8.5 (0.33) DIA. 16.5 (0.65) MAX. MAX. 70 (2.75) MIN. CERAMIC HOUSING 22.5 (0.88) MAX. DIA. 29 (1.14) MAX. SW 27 C.S. 16mm 2 FLEXIBLE LEAD (.025 s.i.) 2.6 (0.10) MAX. WHITE SHRINK 20 (0.79) MIN. 29.5 (1.16) MAX. 1/2"-20UNF-2A 9.5 (0.37) MIN. WHITE GATE 215 (8.46) C.S. 0.4 mm2 WHITE SHRINK RED SHRINK RED CATHODE RED SILICON RUBBER 4.3 (0.17) DIA 21 (0.83) 12.5 (0.49) MAX. 157 (6.18) 170 (6.69) (.0006 s.i.) GLASS METAL SEAL 8.5 (0.33) DIA. 16.5 (0.65) MAX. 23.5 (0.93) MAX. DIA. MAX. 29 (1.14) MAX. 70 (2.75) MIN. C.S. 16mm 2 FLEXIBLE LEAD (.025 s.i.) 2.6 (0.10) MAX. 20 (0.79) MIN. 29.5 (1.16) MAX. 1/2"-20UNF-2A SW 27 9.5 (0.37) MIN. WHITE GATE AMP. 280000-1 REF-250

www.irf.com Bulletin I25167 rev. C 03/03 Fig. 4 - On-state Power Loss Characteristics 100 110 120 130 0 2 04 06 08 0 1 0 0 1 2 0 Maximum Allowable Cas e T emperature (°C) 30° 60° 90° 120° 180° Average On-s tate Current (A) Conduction Angle S T 110S S eries R (DC) = 0.195 K/ WthJC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 0 20 40 60 80 100 120 140 160 180 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Maximum Allowable Cas e T emperature (°C) Conduction P eriod S T 110S S eries R (DC) = 1.95 K/ WthJC 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R = 0.1 K/ W - Delta R thSA

0.2 K/W

0.3 K/W

0.4 K/W

0.6 K/W0.8 K/W

1 K/W

0.5 K/W

1.2 K/W

0 20 40 60 80 100 120 140 160 180 DC 180° 120° 90° 60° 30° RM S Li m it Conduction P eriod Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) S T110S S eries T = 125°CJ 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) R = 0.1 K/W - Delta R 0.4 K/W0.5 K/W0.6 K/W

0.8 K/W

02 0 4 0 6 0 8 0 1 0 0 1 2 0 180° 120° 90° 60° 30° RM S Lim it Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) S T 110S Series T = 125°CJ Fig. 3 - On-state Power Loss Characteristics

www.irf.com Bulletin I25167 rev. C 03/03 1000 1200 1400 1600 1800 2000 2200 2400 11 0 1 0 0 Number Of E qua l Amplitude Half Cycle Current Pulses (N) Peak Half S ine Wave On-state Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s ST1 1 0 S Se r i e s J At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 0.01 0.1 1 10 Puls e T rain Duration (s ) Maximum Non R epetitive S urge Current Vers us Puls e T rain Duration. Control Of Conduction May Not B e Maintained. Peak Half S ine Wave On-state Current (A) Initial T = 125°C No Voltage R eapplied R ated V R eapplied J RRM S T 110S S eries Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave P uls e Duration (s ) thJCT rans ient T hermal Impedance Z (K/ W) S T110S S eries S teady S tate Value R = 0.195 K/ W (DC Operation) thJC Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - On-state Voltage Drop Characteristics Instantaneous On-state Voltage (V) Instantaneous On-state Current (A) 100 1000 10000 Tj = 25˚C Tj = 125˚C ST110S Series

www.irf.com Bulletin I25167 rev. C 03/03 Fig. 9 - Gate Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) Tj = 2 5 ° C Tj = 1 2 5 ° C Tj = - 4 0 ° C (1) (2) (3) Ins tantaneous Gate Current (A) I ns tantaneous Gate Voltage (V) a) R ecommended load line for b) R ecommended load l ine for <=30% rated di/ dt : 10V, 10ohms F requency L imited by P G(AV) rated di/ dt : 20V, 10ohms; tr<=1 µs tr<=1 µs (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms Device: S T 110S S eries R ectangular gate puls e (4) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.