ST05250 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 17

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 3 Typical performances
  • 4 Impedance
  • 5 Test circuits
  • 6 Package information
  • 6.1 B4E package information
  • 7 Marking information

Features

Order code Frequency VDD POUT Gain Efficiency ST05250 945 MHz 28 V 250 W 13.5 dB 52 %

  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range for improved class C operation
  • In compliance with the european directive 2002/95/EC

Applications

  • 2 – 30 MHz HF or short wave communication
  • 30 – 88 MHz ground communication
  • 118 – 140 MHz avionics
  • 136 – 174 MHz commercial ground communication
  • 30 – 512 MHz jammer, ground/air communication
  • HF – 1 GHz ISM - instrumentation

Description

The ST05250 is a 250 W, 28/32 V LDMOS FETs, designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link ST05250 Product summary Order code ST05250 Marking ST05250 Package B4E Packing Tape and reel 13" Base / Bulk qty 120 / 120

250 W, 28/32 V, HF to 1 GHz, RF Power LDMOS transistor

DS12681 - Rev 4 - March 2021 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings (TCASE= 25 °C) Table 2. Thermal data Table 3. ESD protection

2 Electrical characteristics

(TC = 25 °C unless otherwise specified). Table 4. Static (per side) Table 5. Dynamic Note: V DD = 28 V, IDQ = 500 mA, pulsed CW, pulse width = 20 μs, duty cycle = 10%.

Electrical characteristics

3 Typical performances

Figure 1. P1dB and drain efficiency versus frequency (2 - 130MHz) Figure 2. P3dB and drain efficiency versus frequency (2 - 130 MHz)

Figure 3. P3dB and drain efficiency versus frequency (30 - 512 MHz) Figure 4. Power gain versus output power (30 - 512 MHz)

30 MHz 225 MHz 512 MHz

Note: V DD = 28 V, IDQ = 200 mA, CW signal.

4 Impedance

Figure 7. Current conventions Table 6. Impedance data Note: Measured gate-to-gate and drain-to-drain, respectively (balanced configuration).

5 Test circuits

Figure 8. Test circuit photo (2 - 130 MHz) Table 7. Components list (2 - 130 MHz)

Table 8. Components list (30 - 512 MHz) Figure 11. Test circuit photo (f= 945 MHz)

Table 9. Components list (f= 945 MHz)

6 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

6.1 B4E package information

Figure 12. B4E package outline

Package information

DS12681 - Rev 4 page 12/17

Table 10. B4E package mechanical data

7 Marking information

Figure 13. Marking composition

Revision history

Table 11. Document revision history 01-Aug-2018 1 Initial release. Updated Figure 1. Output power and efficiency vs frequency. Table 5. Dynamic. Added Section 3 Typical performance. Modified the entire Section 5 Test circuits.