ST04-27F1_10 SHINDENGEN | Alldatasheet
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Power zener Diode Small Surface Mount Device Single Zener Diode 1F Package ST04-27F1 58H OUTLINE Mi4$tEEd CHARACTERISTIC DIAGRAMS ST04-27 F | Package : 1F Unit:mm CARY BRR -ISVED IRE Vor-Tj Ht eT] BE Weight 0.058 g Irv Vou Breakdown Voltage vs Junction Temperature Reverse Current vs Junction Temperature 31 - : Ei ten eens 27V 400W —" ay ia 7 Ss 109 | —— +t a a B | 2 a ae SESuge ata | “W95R a8 Deft 2) é 2a ee Eicd “NSW Po : Sete | 6 ALS OHS . (2a Bee 3 2 aa £0 | gol | oy Eevee {| : i Dea 3 TYP ce aye : = = aise Test IW Cass — a 3 Thviboore EES: iatag ay + Small SMD a Tat own " 24 1 : Avallable for automoth 2] 2 re 72040 6080 100 120 140 160 ‘020-40 60-80 100120 140160 vailable for automotive use Clamping Voltage Ver V] Junction Temperature Tj [°C] Junction Temperature Tj ['C] AFERUC OW CER LTEWCDIA bLUE CHAIR — Bea) Ze BLE SVs, PREIRARIC OUT EHEC CREF SU, For details of outline dimensions, refer to our web site or the {ice Sean neem “een Semiconductor Short Form Catalog. As for the marking, refer to Peak Surge Reverse Current dlunetion Capacitance Junction Capacitance the specification “Marking, Terminal Connection 1000 ET 500, 1 = \\, non repetitive BBR RATINGS = weswi2.| T25 @MHRAEE Absolute Maximum Ratings (#7 #2y 444 T1=25/unless otherwise specified) Zl oo! g zy Coo | ace & HEE HT é | semen er ee eee eee ee 3g Item Symbol Conditions Ratings Unit % & & eee T. -55~175 C g 5 5 Storage temperature Mg 2 2 g ee ; c 2" 5 Ea 3 ° TP . WP 10/2005 FEAR Y HL 9 = TI=25°C T1=25°C EA ithe I 10/2005 Non-repetitive 1 A & OSC=20mV OSC=20mV LE OSE STE 0) On 1 ‘oT T 10 100-1000 ‘oT T 70 EA SEE BE 7 Ice @B AH ARIE Electical Characteristics (Him #2v 44 T1=25/unless otherwise specified) sven : MIN. 24. 3 Brenkdorn voltage Ver |" TYP. 27.0 Vv MAX. 29. 7 MAK. 97 eee Wav [fier Rt %*Sine wavelS50H2 CME LTE TF. %50llz sine wave is used for measurements, ERED O REL —ALNYIL SY ABR TBD ET. Typical itekiHWyee AEH LCE. °* Semiconductor products generally have characterristic variation. Typical a statistical average of the devices ability.