ST03-240F1 SHINDENGEN | Alldatasheet
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Power zener Diode Small Surface Mount Device Single Zener Diode 1F Package ST03-240F1 Wi OUTLINE Mi4$tEEd CHARACTERISTIC DIAGRAMS - F Unit: PAM -SBBR- 75 CY TBE Ven=T 434 eT) $5 10 “ay “WIR E O-ft 2 Bo E Ew LU + \\VBISMD 2 go = é 50 % z e aol E 2 C] 4 TYP 3 onl TYP 4 TYP . all — a TI=25°C Pulse Test Pulse Test 1W Class a Ee) a 10/1000 4s Ib=lmA ‘Vr=200V_ + Small SMD a a oot I anal L [ WU | Y a ED [zal 200 Bo 300 50 a a a rT + Application for snubber circuit Clamping Voltage Vet [V] Junction Temperature Tj [*C] Junction Temperature Tj [°C] ATER OV CAAT IEMD IIA bE CPR BEI) &e CBA SVs, PREIRARIC OUT EHEC CREF SU, For details of outline dimensions, refer to our web site or the Tha een een Semiconductor Short Form Catalog. As for the marking, refer to Peak Surge Reverse Current Junction Capacitance Junction Capacitance the specification “Marking, Terminal Connection. ” 10 20 10005 BERR RATINGS a MTL Sie Sa ae ¢ i i ae ORV LS T1225 ss -wise spec ral a 8 @MHRAEE Absolute Maximum Ratings (#7 #2y 444 T1=25/unless otherwise specified) _ z Pee | Bl ar Ee A Wee Tie é a: 3 soe Item Symbol Conditions Ratings Unit 8, Fy | & ees 4g 6 ‘RAFI 1 5 § g 5 eA TE 5 c o 5 4 5 [tees json prone PMP | 3 = ie Wr [Biers way PWR atv Z ~ j Oso Bee Sav EAS — 2 1071000;,. FAR EL exponential wave Va=200V f100kHz Maximum surge reverse current IRSM_| 10/10001.s Non-repet itive 1 A a F 1 EMS 7 10/1000. FRO EL “ ‘ ‘ ae “ ms “ 4 io ” Maximum surge reverse power PRSM_| 10/1000u.; Non-repetitive 310 W Lomas] ey LEmeNe ONG @B AH ARIE Electical Characteristics (Him #2v 44 T1=25/unless otherwise specified) sven MIN. 220 Breakdon voltage VBR TYP. 235 Vv , MAX, 250 %*Sine wavelS50H2 CME LTE TF. URRO RENE MUICST Y AH o CHSD ET. Typicalldiiat hte RA #2 LTE, *%*Semiconductor products generally have characterristic variation. Typical a statistical average of the devices ability.