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P-Channel Enhancement MOSFET With Schottky Diode 14-Jan-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1206-8CF RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe 1206-8CF saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

1206-8CF 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage (MOSFET) VDS -20 V Reverse Voltage (Schottky) V KA 20 V Gate-Source Voltage (MOSFET) V GS ±8 V TA=25°C -2.5 Continuous Drain Current(TJ=150°C )(MOSFET) 1 TA=70°C ID -1.9 A Pulsed Drain Current (MOSFET) 2 I DM -10 A Continuous Source Current (MOSFET Diode Conduction) 1 I S -1.6 A Average Forward Current (Schottky) I F 0.5 A Pulse Forward Current (Schottky) I FM 8 A TA=25°C 2.1 Maximum Power Dissipation (MOSFET)1 TA=70°C 1.1 TA=25°C 1.3 Maximum Power Dissipation (Schottky)1 TA=70°C PD 0.68 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦5 sec 50 60 Maximum Junction to Ambient 1 Steady State RθJA 90 110 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 2.00 2.10 M 0.08 0.25 B 3.00 3.05 a 1.70 1.73 C 3.00 3.05 b 0.24 0.35 D 0.65 0.70 L 0.20 0.40 E 1.95 2.00 L1 0 0.1 F 0.70 0.90 A A C C GS D D

P-Channel Enhancement MOSFET With Schottky Diode 14-Jan-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage V GS(th) -0.4 - - V V DS = VGS, ID = -250μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= ±8V - - -1 VDS = -16V, VGS= 0V Zero Gate Voltage Drain Current I DSS - - -10 μA VDS = -16V, VGS= 0V, TJ=55°C On-State Drain Current 1 I D(ON) -5 - - A V DS = -5V, VGS= -4.5V Drain-Source On-State Resistance 1 R DS(ON) - - 0.160 Ω VGS= -2.5V, ID = -3.0A Forward Transconductance 1 g FS - 3 - S V DS= -5V,,ID = -3.6A Diode Forward Voltage V SD - -0.70 - V I S= -1.6A, VGS=0V Dynamic 2 Total Gate Charge Q g - 6.0 - Gate-Source Charge Q gs - 0.80 - Gate-Drain Charge Q gd - 1.30 - nC ID= -3.6A VDS= -5V VGS= -4.5V Turn-On Delay Time Td (ON) - 6.5 - Rise Time T r - 20 - Turn-Off Delay Time Td (OFF) - 31 - Fall Time T f - 21 - nS VDD= -5V VGEN= -4.5V RG= 6Ω RL= 5Ω SCHOTTKY SPECIFICATIONS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions - - 0.48 IF= 0.5A Forward Voltage Drop 1 V F - - 0.4 V IF= 0.5A, TJ=125°C - - 0.1 Vr= 30V - - 1 Vr= 30V, TJ=75°C Maximum Reverse Leakage Current I RM - - 10 mA Vr= 30V, TJ=125°C Junction Capacitance C T - 31 - pF Vr= 10V Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

P-Channel Enhancement MOSFET With Schottky Diode 14-Jan-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

P-Channel Enhancement MOSFET With Schottky Diode 14-Jan-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE