SSU50N10

SSU50N10 SECOS | Alldatasheet

Document overview

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Technical content

54A , 100V , R DS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 9-Dec-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -263 50N10 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSU50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications .

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS and 100% Rg Guaranteed /circle6 Green Device Available MARKING

PACKAGE INFORMATION

TO-263 0.8K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 VGS =10V, TC =25° C ID 54 A VGS =10V, TC =100° C 38 A Pulsed Drain Current 2 IDM 160 A Total Power Dissipation 4 TC =25° C PD 104 W TA=25° C 3.13 Single Pulse Avalanche Energy 3 E AS 98 mJ Single Pulse Avalanche Current I AS 41 A Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient (PCB mount)

1 R θJA 40 ° C / W

Maximum Thermal Resistance Junction-Case 1 R θJC 1.2 ° C / W Gate Source Drain Date Code REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.80 c2 1.17 1.45 b 0.76 1.00 b2 1.1 1.47 L4 0.00 0.30 D 8.5 9.0 c 0.36 0.5 e 2.54 REF L3 1.50 REF L 14.6 15.8 L1 2.29 2.79 θ 0° 8° E 9.80 10.4 L2 1.27 REF

54A , 100V , R DS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 9-Dec-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 100 - - V V GS =0, I D =250 µA Gate-Threshold Voltage V GS(th) 2.5 - 4.5 V V DS =V GS , I D =250 µA Forward Transconductance g fs - 27 - S V DS =5V, I D =30A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current TJ =25° C IDSS - - 1 µA V DS =80V, V GS =0 TJ =55° C - - 5 Static Drain-Source On-Resistance 2 R DS(ON) - 18 22 m Ω VGS =10V, I D =30A - 36 40 V GS =7V, I D =15A Gate Resistance R g - 1.9 3.8 Ω V DS =0, V GS =0, f =1.0MHz Total Gate Charge Q g - 27.6 38.6 nC ID =30A VDS =80V VGS =10V Gate-Source Charge Q gs - 11.4 16 Gate-Drain (“Miller”) Change Q gd - 7.9 11.1 Turn-on Delay Time T d(on) - 15.6 31.2 nS VDS =50 V ID =30A VGS =10V R G =3.3 Ω Rise Time Tr - 17.2 31 Turn-off Delay Time T d(off) - 16.8 33.6 Fall Time Tf - 9.2 18.4 Input Capacitance C iss - 1890 2645 pF VGS =0 VDS =15 V f =1.0MHz Output Capacitance C oss - 268 375 Reverse Transfer Capacitance C rss - 67 94 Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 53 - - mJ V DD =25V,L=0.1mH , I AS =30A Source-Drain Diode Diode Forward Voltage 2 V SD - - 1.2 V I S=1A, V GS =0 Continuous Source Current 1,6 I S - - 40 A V D =V G =0, Force Current Reverse Recovery Time T rr - 34 - ns IF=30A, T J = 25° C dI/dt=100A/ µs Reverse Recovery Charge Q rr - 47 - nC Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width ≦300 µs , duty cycle ≦2% 3. The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =41A 4. The power dissipation is limited by 150° C junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

54A , 100V , R DS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 9-Dec-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

54A , 100V , R DS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 9-Dec-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES