SSU07N65SL_15 SECOS | Alldatasheet
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Technical content
7A , 650V , R DS(ON) 1.4 Ω N-Ch Enhancement Mode Power MOSFET 08-Oct-2013 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -263 RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .
FEATURES
/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V TC =25° C 7 A Continuous Drain Current TC =100° C ID 4 A Pulsed Drain Current IDM 28 A TC =25° C 140 Total Power Dissipation Derate above 25° C PD 1.12 W Single Pulse Avalanche Energy 1 E AS 435 mJ Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient R θJA 0.89 ° C / W Maximum Thermal Resistance Junction-Case R θJC 62.5 ° C / W Notes: 1. L=30mH,I AS =5A, V DD =100V, R G =25 Ω, Starting T J =25° C Gate Source Drain A 4.00 4.85 c2 1.10 1.65 b 0.51 1.00 b2 1.34 REF L4 0.00 0.30 D 8.0 9.65 C 0.30 0.74 e 2.54 REF L3 1.50 REF L 14.6 15.88 L1 1.78 2.79 L2 1.27 REF E 9.60 10.67
7A , 650V , R DS(ON) 1.4 Ω N-Ch Enhancement Mode Power MOSFET 08-Oct-2013 Rev. A Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 650 - - V V GS =0, I D = 250 µA Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±30V Drain-Source Leakage Current I DSS - - 1 µA V DS =650V, V GS =0 Static Drain-Source On-Resistance R DS(ON) - 1.1 1.4 Ω V GS =10V, I D =3.5A Total Gate Charge 1.2 Q g - 15.5 - Gate-Source Charge 1.2 Q gs - 5.4 - Gate-Drain Change 1.2 Q gd - 4.5 - nC ID =7A VDS =520V VGS =10V Turn-on Delay Time 1.2 T d(on) - 29 - Rise Time 1.2 Tr - 48 - Turn-off Delay Time 1.2 T d(off) - 39 - Fall Time 1.2 Tf - 33 - nS VDD =325V ID =7A R G =25 Ω Input Capacitance C iss - 903.3 - Output Capacitance C oss - 97.7 - Reverse Transfer Capacitance C rss - 3.1 - pF VGS =0 VDS =25V f =1.0MHz Source-Drain Diode Diode Forward Voltage V SD - - 1.4 V I S=7A, V GS =0 Continuous Source Current I S - - 7 A Pulsed Source Current I SM - - 28 A Integral Reverse P-N Junction Diode in the MOSFET Reverse Recovery Time 1. T rr - 532.77 - ns Reverse Recovery Charge 1. Q rr - 3.57 - µC IS=7A,V GS =0, dl F/dt=100A/ µS Notes: 1. Pulse Test: Pulse width ≦300 µS, Duty cycle ≦2% 2. Essentially independent of operating temperature.
7A , 650V , R DS(ON) 1.4 Ω N-Ch Enhancement Mode Power MOSFET 08-Oct-2013 Rev. A Page 3 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
7A , 650V , R DS(ON) 1.4 Ω N-Ch Enhancement Mode Power MOSFET 08-Oct-2013 Rev. A Page 4 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
7A , 650V , R DS(ON) 1.4 Ω N-Ch Enhancement Mode Power MOSFET 08-Oct-2013 Rev. A Page 5 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL TEST CURVES