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4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET 17-Jun-2013 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO-263 4N65 RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING
PACKAGE INFORMATION
TO-263 0.8K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage V GS ±30 V TC=25°C 4 A Continuous Drain Current @VGS=10V 1 TC=100°C ID 2.6 A Pulsed Drain Current 2 IDM 8 A TC=25°C 112 Total Power Dissipation 4 TA=25°C PD W Single Pulse Avalanche Energy 3 E AS 2.36 mJ Single Pulse Avalanche Current I AS 2 A Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient (PCB mount)1 RθJA 62 °C / W Maximum Thermal Resistance Junction-Case 1 R θJC 1.12 °C / W Gate Source Drain Date Code A 4.00 4.85 c2 1.10 1.45 b 0.68 1.00 b2 1.34 REF L4 0.00 0.30 D 8.0 9.15 C 0.36 0.53 e 2.54 REF L3 1.50 REF L 14.6 15.85 L1 2.29 2.79 L2 1.27 REF E 9.60 10.45
4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET 17-Jun-2013 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 650 - - V V GS=0, ID= 250μA Gate-Threshold Voltage V GS(th) 2 - 5 V V DS=VGS, ID=250μA Forward Transconductance g fs - 3 - S V DS=15V, ID=2A Gate-Source Leakage Current I GSS - - ±100 nA V GS= ±30V Drain-Source Leakage Current I DSS - - 2 μA V DS=520V, VGS=0 Static Drain-Source On-Resistance 2 R DS(ON) - 2.1 2.6 Ω V GS=10V, ID=2A Gate Resistance R G - 3.4 6.8 Ω V DS=VGS=0, f=1MHz Total Gate Charge(10V) Q g - 18 - Gate-Source Charge Q gs - 4.9 - Gate-Drain (“Miller”) Change Q gd - 6.1 - nC ID=1A VDS=520V VGS=10V Turn-on Delay Time T d(on) - 11.2 - Rise Time T r - 18.8 - Turn-off Delay Time T d(off) - 29.2 - Fall Time T f - 29.2 - nS VDD=300V ID=1A VGS=10V RG=10 Ω Input Capacitance C iss - 775 - Output Capacitance C oss - 56 - Reverse Transfer Capacitance C rss - 3.8 - pF VGS =0 VDS=25V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 0.6 - - mJ V DD=100V,L=1mH , IAS=1A Source-Drain Diode Diode Forward Voltage 2 V SD - - 1 V I S=1A, VGS=0 Reverse Recovery Time T rr - 195 - ns Reverse Recovery Charge Q rr - 580 - nC IF=1A,TJ=25°C, dl/dt=100A/μS Continuous Source Current 1,6 I S - - 4 A Pulsed Source Current 2,6 I SM - - 8 A VD=VG=0, Force Current Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper. 2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is V DD=100V,VGS=10V,L=1mH,IAS=2A 4. The power dissipation is limited by 150°C, junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.
4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET 17-Jun-2013 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET 17-Jun-2013 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES