JPAD LINEAR | Alldatasheet

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Technical content

FEATURES

DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE BVR ≥ -30V REVERSE CAPACITANCE Crss ≤ 2.0pF ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +135 °C Maximum Power Dissipation Continuous Power Dissipation (PAD) 300mW Continuous Power Dissipation (J/SSTPAD) 350mW Maximum Currents Forward Current (PAD) 50mA Forward Current (J/SSTPAD) 10mA COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS ALL PAD -45 ALL SSTPAD -30 BVR Reverse Breakdown Voltage ALL JPAD -35 IR = -1µA VF Forward Voltage 0.8 1.5 V IF = 5mA PAD1,5 0.5 0.8 Crss Total Reverse Capacitance All Others 1.5 2 pF VR = -5V, f = 1MHz SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC PAD2 JPAD2 SSTPAD2 UNITS CONDITIONS (SST/J)PAD1 -1 (SST/J)PAD2 -2 (SST/J)PAD5 -5 -5 -5 (SST/J)PAD10 -10 -10 -10 (SST/J)PAD20 -20 -20 -20 (SST/J)PAD50 -50 -50 -50 (SST/J)PAD100 -100 -100 (SST/J)PAD200 -200 IR Maximum Reverse Leakage Current2 (SST/J)PAD500 -500 pA VR = -20V * Cathode tied to Case PAD* A BOTTOM VIEW TO-72 SSTPAD SOT-23 TOP VIEW K A K JPAD TO-92 BOTTOM VIEW 1 2 KA PAD1,2,5 A K C13 BOTTOM VIEW TO-72 Linear Integrated Systems PAD SERIES PICO AMPERE DIODES Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Figure 1. Operational Amplifier Protection Mode Input voltage limited by JPADs D3 and D4 to ±15V. Figure 2. Sample and Hold Circuit voltages fed capacitively from the JFET switch gate.

3 LEADS

  1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
  2. The PAD type number denotes its maximum reverse current value in pico amperes. Devices with IR values intermediate to those shown

otherwise under any patent or patent rights of Linear Integrated Systems.