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Metal Full Size Dip Stratum 3 CMOS (VC)TCXO 18.3mm x 11.7mm Call: +1-949-783-7300 | Fax: +1-949-783-7301 Specifications are subject to change without notice. www.suntsu.com Suntsu Electronics, Inc. 142 TECHNOLOGY DR., SUITE 150 IRVINE, CA 92618 Output Level Low (VOL) V 0.1*VDD Output Level High (VOH) V 0.9*VDD

  • Stratum 3 (Overall ±4.6ppm )
  • CMOS
  • (VC)TCXO
  • Base Stations
  • Stratum 3 Features Applications Frequency Range Freq. Stability vs. Supply Voltage Freq. Stability vs. Aging/Year Freq. Stability vs. Op Temp. Operating Temperature Storage Temperature VDD ±5% Change 1 year, ±2.6ppm for 10years See part numbering guide for options. See part numbering guide for options. MHz ppm ppm ppm 0.1 1.0 +85 +125 -0.1 -1.0 -1.0 -40 -55 Supply Voltage (VDD) - 3.3V Option Supply Voltage (VDD) - 5.0V Option Current (IDD) 3.3 5.0 V V mA 3.465 5.250 3.135 4.750 +1.0 Freq. Stability vs. Load ±5% Changeppm 0.1-0.1 Frequency Tolerance at +25ºC ppm -0.3 +0.3 Current (VC, VCTCXO) - 3.3V Option Output Load (CMOS) Start-Up Time Pullability (VCTCXO) Frequency Adjustment Phase Noise (Typical) 10Hz Offset Phase Noise (Typical) 100Hz Offset See part numbering guide for options. -80 V pF PPM ms ppm dBc/Hz 3.0 0.3 ±5.0 Phase Noise (Typical) 1KHz Offset Phase Noise (Typical) 10KHz Offset Phase Noise (Typical) 100KHz Offset -120 -135 -140 dBc/Hz dBc/Hz dBc/Hz ±12.0 Symmetry (Duty Cycle) ns 10 Current (VC, VCTCXO) - 5.0V Option V 0.5 4.5 -145dBc/Hz Rise (TR) And Fall (TF) Time Linearity (VCTCXO) % 20 TypicalUnitsElectrical Parameters Maximum RemarksMinimum SST FS C 33 R 48 V E - 10.000M Cage Code: 4GUT4 To customize your parameters contact a Suntsu representative. SUNTSU STRATUM 3 TCXO FULL SIZE CMOS Part Numbering Guide COMPLIANT FREQUENCY STABILITY FREQUENCY R : ±1.0ppm 27 : -20°C - +70°C 48 : -40°C - +85°C MHz SUPPLY VOLTAGE 33 : 3.3V±5% 50 : 5.0V±5% PULLABILITY BLANK : TCXO E : ±12.0ppm F : ±8.0ppm G : ±5.0ppm TCXO/VCTCXO BLANK : TCXO V : VCTCXO OPERATING TEMPERATURE RANGE

Metal Full Size Dip Stratum 3 CMOS (VC)TCXO 18.3mm x 11.7mm Call: +1-949-783-7300 | Fax: +1-949-783-7301 Specifications are subject to change without notice. www.suntsu.com Suntsu Electronics, Inc. 142 TECHNOLOGY DR., SUITE 150 IRVINE, CA 92618 All dimensions are in millimeters (mm) unless otherwise noted. Drawings are not to scale. Outline Drawing & Part Marking Test Circuit (CMOS) Typical Phase Noise And Jitter Performance (Measured By Agilent E5052A) Waveform (CMOS) Frequency - 24.576MHz Frequency - 24.576MHz

Metal Full Size Dip Stratum 3 CMOS (VC)TCXO 18.3mm x 11.7mm Call: +1-949-783-7300 | Fax: +1-949-783-7301 Specifications are subject to change without notice. www.suntsu.com Suntsu Electronics, Inc. 142 TECHNOLOGY DR., SUITE 150 IRVINE, CA 92618 Mechanical Shock Vibration MIL-STD-202, Method 213, Condition B MIL-STD-883, Method 2007, Condition A MIL-STD-883, Method 1010, Condition B MIL-STD-883, Method 1014, Condition A Moisture Resistance MIL-STD-883, Method 1004MIL-STD-883, Method 1014, Condition C Resistance to Solvents MIL-STD-202, Method 215MIL-STD-883, Method 2003 Temperature Cycling Fine Leak Test Gross Leak Test Solderability Resistance to Soldering Heat MIL-STD-202, Method 210, Condition KJ-STD-020, MSL 1Moisture Sensitivity Environmental Specifications Mechanical Specifications