SST8810J

SST8810J SECOS | Alldatasheet

Document overview

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Technical content

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8810J 7A, 20V , R DS(ON) 20 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 26-Oct-2015 Rev. A Page 1 of 3 B L F HC JD G K A E L8810 121 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SST8810J uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It is protected by ESD. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. MARKING

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 7 A Pulsed Drain Current 1 IDM 30 A Thermal Resistance from Junction to Ambient R θJA 83.3 ° C / W Lead Temperature for Soldering Purposes@1/8’’ from case for 10s T L 260 ° C Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Notes: 1. Repetitive rating: Pulse width is limited by the junction temperature. SOT-26 A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.30 MAX. K 0° 10 ° E 1.90 REF. L 0.95 REF. F 0.30 0.50 D1/D2 D1 /D 2 G 1 S2 G 2

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8810J 7A, 20V , R DS(ON) 20 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 26-Oct-2015 Rev. A Page 2 of 3

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage BV DSS 20 - - V V GS =0, I D =250 µA Drain-Source Leakage Current I DSS - - 1 µA V DS =16V, V GS =0 - - ±1 µA V DS =0V, VGS =±4.5V Gate-Body Leakage Current I GSS - - ±10 µA V DS =0V, VGS =±8V Gate-Threshold Voltage 1 V GS(th) 0.4 - 1 V V DS =V GS , I D =250 µA - - 20 V GS =10V, I D =7A - - 22 V GS =4.5V, I D =6.6A - - 24 V GS =3.8V, I D =6A - - 26 V GS =2.5V, I D =5.5A Drain-Source On-Resistance 1 R DS(ON) - - 35 m Ω VGS =1.8V, I D =5A Forward Transconductance 1 g fs 9 - - S V DS =5V, I D =7A Diode Forward Voltage 1 V SD - - 1 V I S=1A, V GS =0 Dynamic Characteristics Input Capacitance C iss - 1150 - Output Capacitance C oss - 185 - Reverse Transfer Capacitance C rss - 145 - pF VDS =10V VGS =0 f=1MHz Total Gate Charge Q g - 15 - Gate-Source Charge Q gs - 0.8 - Gate-Drain (“Miller”) Charge Q gd - 3.2 - nC VDS =10V VGS =4.5V ID =7A Switching Characteristics Turn-on Delay Time T d(on) - 6 - Rise Time T r - 13 - Turn-off Delay Time T d(off) - 52 - Fall Time T f - 16 - nS VDD =10V VGS =5V R L=1.35Ω R GEN =3Ω Notes: 1. Pulse test : Pulse width ≤300 µs, duty cycle ≤0.5%.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8810J 7A, 20V , R DS(ON) 20 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 26-Oct-2015 Rev. A Page 3 of 3 CHARACTERISTIC CURVES