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Technical content
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8205S 6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power MOSFET 07-Aug-2014 Rev. B Page 1 of 4 B L F HC JD G K A E RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SST8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is universally used for all commercial- industrial surface mount applications.
FEATURES
Low on-resistance Capable of 2.5V gate drive Low drive current MARKING
PACKAGE INFORMATION
Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage V GS ±10 V TA=25°C 6 Continuous Drain Current 3, VGS@4.5V TA=70°C ID 4.8 A Pulsed Drain Current 1 IDM 20 A Power Dissipation T A=25°C P D 1.14 W Linear Derating Factor 0.01 W / °C Operating Junction and Storage Temperature Range Tj, Tstg -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient 3 Max. R JA 110 °C / W SOT-26 Date Code A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D1 . 3 0 M A X . K 0 ° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8205S 6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power MOSFET 07-Aug-2014 Rev. B Page 2 of 4 ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 20 - - V V GS=0, ID=250uA Breakdown Voltage Temperature Coefficient △BVDS /△Tj - 0.03 - V/°C Reference to 25°C, I D=1mA Gate-Threshold Voltage V GS(th) 0.5 - 1.5 V V DS=VGS, ID=250uA Gate-Body Leakage Current I GSS - - ±100 nA V GS=±10V TJ=25°C - - 1 VDS=16V, VGS=0 Drain-Source Leakage Current TJ=70°C IDSS - - 25 uA VDS=16V, VGS=0 - - 28 V GS=4.5V, ID=6A Drain-Source On-Resistance 2 R DS(ON) - - 38 mΩ VGS=2.5V, ID=5.2A Forward Transconductance g fs - 20 - S V DS=10V, ID=6A Dynamic Total Gate Charge2 Q g - 23 - Gate-Source Charge Q gs - 4.5 - Gate-Drain (“Miller”) Charge Q gd - 7 - nC VDS=20V, VGS=5V, ID=6A Turn-on Delay Time2 T d(on) - 30 - Rise Time T r - 70 - Turn-off Delay Time T d(off) - 40 - Fall Time T f - 65 - nS VDS=10V, VGS=5V, RG=6Ω, RD=10Ω, ID=1A Input Capacitance C iss - 1035 - Output Capacitance C oss - 320 - Reverse Transfer Capacitance C rss - 150 - pF VGS=0V VDS= 20V, f=1.0MHz Source-Drain Diode Diode Forward Voltage 2 V SD - - 1.2 V I S=1.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty≦ cycle 2%≦ 3. Surface mounted on 1 in copper pad of FR4 board, t≦5sec; 180°C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8205S 6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power MOSFET 07-Aug-2014 Rev. B Page 3 of 4 CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8205S 6.0A , 20V , RDS(ON) 28 m N-Ch Enhancement Mode Power MOSFET 07-Aug-2014 Rev. B Page 4 of 4 CHARACTERISTIC CURVES