SST8205J SECOS | Alldatasheet
Document overview
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Technical content
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8205J 6A, 19V , R DS(ON) 25 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 22-Oct-2015 Rev. A Page 1 of 3 B L F HC JD G K A E L8205 141 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST8205J provides the designers with the best combination of fast switching, low on-resistance and cost-effectiveness. SOT-26 package is universally used for all commercial- industrial surface mount applications.
FEATURES
/circle6 TrenchFET power MOSFET /circle6 Excellent R DS(ON) /circle6 Low gate charge MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 19 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 6 A Pulsed Drain Current 1 IDM 25 A Thermal Resistance from Junction to Ambient 2 R θJA 357 ° C / W Lead Temperature for Soldering Purposes@1/8’’ from case for 10s TL 260 ° C Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C SOT-26 A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.30 MAX. K 0° 10 ° E 1.90 REF. L 0.95 REF. F 0.30 0.50
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8205J 6A, 19V , R DS(ON) 25 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 22-Oct-2015 Rev. A Page 2 of 3
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage BV DSS 19 - - V V GS =0, I D =250 µA Drain-Source Leakage Current I DSS - - 1 µA V DS =18V, V GS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0, VGS =±10V Gate-Threshold Voltage 3 V GS(th) 0.5 - 0.9 V V DS =V GS , I D =250 µA - - 25 V GS =4.5V, I D =6A Drain-Source On-Resistance 3 R DS(ON) - - 32 m Ω VGS =2.5V, I D =5A Forward Transconductance 3 g fs - 10 - S V DS =5V, I D =4.5A Diode Forward Voltage 3 V SD - - 1.2 V I S=1.25A, V GS =0 Switching Characteristics Total Gate Charge Q g - 11 - Gate-Source Charge Q gs - 2.3 - Gate-Drain (“Miller”) Charge Q gd - 2.5 - nC VDS =10V VGS =4.5V ID =4A Turn-on Delay Time T d(on) - 18 - Rise Time T r - 5 - Turn-off Delay Time T d(off) - 43 - Fall Time T f - 20 - nS VDD =10V VGS =4V R GEN =10 Ω ID =1A Dynamic Characteristics Input Capacitance C iss - 800 - Output Capacitance C oss - 155 - Reverse Transfer Capacitance C rss - 125 - pF VDS =8V VGS =0 f=1MHz Notes: 1. Repetitive rating : Pulse width is limited by the maximum junction temperature. 2. Surface Mounted on FR4 board, t≤10sec. 3. Pulse test : Pulse width ≤300 µs, duty cycle ≤2%.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST8205J 6A, 19V , R DS(ON) 25 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 22-Oct-2015 Rev. A Page 3 of 3 CHARACTERISTIC CURVES