SST6601 SECOS | Alldatasheet

Document overview

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Technical content

3.4A, 30V , R DS(ON) 55mΩΩ ΩΩ -2.3A, -30V , R DS(ON) 115mΩΩ ΩΩ N And P-Channel Enhancement Mode Power MOSFET 25-Mar-2014 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 6 6 0 1 /boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen /UIrecord/UIrecord /UIrecord/UIrecord /boxopen/boxopen /boxopen/boxopen = Date Code TOP VIEW RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SST6601 provide the designer with best combination of fast switching, low on-resistance and cost effectiveness. The SOT-26 package is universally used for all commercial-industrial surface mount applications.

FEATURES

/circle6 Low Gate Charge /circle6 Low On-resistance MARKING CODE

PACKAGE INFORMATION

(TA = 25 °C unless otherwise specified) Ratings Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current 3 TA = 70° C ID 2.7 -1.8 A Pulsed Drain Current 1 IDM 12 -10 A Power Dissipation PD 1.14 W Maximum Junction to Ambient 3 R θJA 110 ° C / W Linear Derating Factor 0.01 W / ° C Operating Junction & Storage Temperature Range TJ, T STG -55~150 ° C Package MPQ Leader Size SOT-26 3K 7 inch SOT-26 A H E FL G J K C D B A 2.70 3.10 G 0.37 REF. B 2.60 3.00 H 0.30 0.55 C 1.20 REF. J - - D 1.40 1.80 K 0.12 REF. E 0.95 REF. L - 0.10 F 0.60 REF.

3.4A, 30V , R DS(ON) 55mΩΩ ΩΩ -2.3A, -30V , R DS(ON) 115mΩΩ ΩΩ N And P-Channel Enhancement Mode Power MOSFET 25-Mar-2014 Rev. A Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static N-Ch 30 - - V GS =0, I D =250 µA Drain-Source Breakdown Voltage P-Ch BV DSS -30 - - V VGS =0, I D = -250 µA N-Ch 0.5 - 1.5 V DS =V GS , I D =250 µA Gate-Threshold Voltage P-Ch VGS(th) -0.6 - -1.4 V VDS =V GS , I D = -250 µA N-Ch - 5 - V DS =5V, I D =3.4A Forward Transconductance P-Ch gfs - 5 - S VDS = -5V, I D = -2.3A N-Ch - - ±100 V GS = ±12V Gate-Source Leakage Current P-Ch IGSS - - ±100 nA VGS = ±12V N-Ch - - 1 VDS =30V, V GS =0 P-Ch - - -1 V DS = -30 V, V GS =0 N-Ch - - 5 V DS =24V, V GS =0 Drain-Source Leakage Current P-Ch IDSS - - -5 µA VDS = -24V, V GS =0 N-Ch - - 55 V GS =10V, I D =3.4A P-Ch - - 115 V GS = -10V, I D = -2.3A N-Ch - - 70 V GS =4.5V, I D =2.8A P-Ch - - 150 V GS = -4.5V, I D = -2A N-Ch - - 110 V GS =2.5V, I D =1A Drain-Source On-Resistance 2 P-Ch R DS(ON) - - 200 m Ω VGS = -2.5V, I D = -1A N-Ch - 4.7 - Total Gate Charge 2 P-Ch Q g - 3.1 - N-Ch - 1.58 - Gate-Source Charge P-Ch Q gs - 1.34 - N-Ch - 0.92 - Gate-Drain (“Miller”) Charge P-Ch Q gd - 0.72 - nC N-Channel V DS =15V, V GS =4.5V, ID =3.4A P-Channel V DS = -15V, V GS = -4.5V, ID = -2.3A N-Ch - 4 - Turn-on Delay Time 2 P-Ch Td(on) - 13 - N-Ch - 2 - Rise Time P-Ch Tr - 10 - N-Ch - 22 - Turn-off Delay Time P-Ch Td(off) - 28 - N-Ch - 3 - Fall Time P-Ch Tf - 13 - nS N-Channel V DS =15V, R G =6Ω,RL=5Ω VGS =10V P-Channel V DS = -15V, R G =6Ω,RD =6 Ω VGS = -10V N-Ch - 451 - Input Capacitance P-Ch C iss - 456 - N-Ch - 32 - Output Capacitance P-Ch C oss - 44 - N-Ch - 26 - Reverse Transfer Capacitance P-Ch C rss - 37 - pF N-Channel V GS =0, V DS =15V, f=1.0MHz P-Channel V GS =0, V DS = -15V, f=1.0MHz N-Ch - 2 3.5 Gate Resistance P-Ch R g - 6.2 7.5 Ω f=1.0MHz

3.4A, 30V , R DS(ON) 55mΩΩ ΩΩ -2.3A, -30V , R DS(ON) 115mΩΩ ΩΩ N And P-Channel Enhancement Mode Power MOSFET 25-Mar-2014 Rev. A Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. (T J = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Source-Drain Diode N-Ch - - 1 I S=1A, V GS =0 Forward On Voltage 2 P-Ch VSD - - -1 V IS= -1A, V GS =0 N-Ch - 11 - I S=3.4A, V GS =0 ,dI/dt=100A/ µs Reverse Recovery Time P-Ch TRR - 16 - ns IS= -2.3A, V GS =0 ,dI/dt=100A/ µs N-Ch - 5.5 - I S=3.4A, V GS =0 ,dI/dt=100A/ µs Reverse Recovery Charge P-Ch Q rr - 7.6 - nC IS= -2.3A, V GS =0 ,dI/dt=100A/ µs N-Ch - - 1.5 Continuous Source Current (Body Diode) P-Ch I S - - -1.5 A Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width ≦300 µs, duty cycle ≦2%. 3 Surface mounted on 1 in 2 copper pad of FR4 board; t ≦5 sec. 180° C/W when mounted on min. copper pad.

3.4A, 30V , R DS(ON) 55mΩΩ ΩΩ -2.3A, -30V , R DS(ON) 115mΩΩ ΩΩ N And P-Channel Enhancement Mode Power MOSFET 25-Mar-2014 Rev. A Page 4 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (N-Channel)

3.4A, 30V , R DS(ON) 55mΩΩ ΩΩ -2.3A, -30V , R DS(ON) 115mΩΩ ΩΩ N And P-Channel Enhancement Mode Power MOSFET 25-Mar-2014 Rev. A Page 5 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (N-Channel)

3.4A, 30V , R DS(ON) 55mΩΩ ΩΩ -2.3A, -30V , R DS(ON) 115mΩΩ ΩΩ N And P-Channel Enhancement Mode Power MOSFET 25-Mar-2014 Rev. A Page 6 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (P-Channel)

3.4A, 30V , R DS(ON) 55mΩΩ ΩΩ -2.3A, -30V , R DS(ON) 115mΩΩ ΩΩ N And P-Channel Enhancement Mode Power MOSFET 25-Mar-2014 Rev. A Page 7 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (P-Channel)