SST6601-C SECOS | Alldatasheet

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Technical content

3.7A, 30V , R DS(ON) 55mΩ -2.7A, -30V , R DS(ON) 110mΩ N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 16-May-2018 Rev. B Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. B L F HC JD G K A E 6601 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SST6601-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SST6601-C meet the RoHS and Green Product requirement with full function reliability approved.

FEATURES

/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING

PACKAGE INFORMATION

Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current 1, @V GS =10V TA=25° C ID 3.7 -2.7 A TA=70° C 3 -2.2 Pulsed Drain Current 3 IDM 15 -10 A Total Power Dissipation T A=25° C P D 1.14 W Operating Junction & Storage Temperature Range T J, T STG -55~150 ° C Thermal Data Thermal Resistance Junction-Ambient 1 R θJA t≦5sec, 110 ° C/W Steady State, 156 Thermal Resistance, Junction-Ambient 2 180 Thermal Resistance, Junction-Case 1 R θJC 70 Package MPQ Leader Size SOT-26 3K 7 inch Part Number Type SST6601-C Lead (Pb)-free and Halogen-free TOP VIEW SOT-26 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.30 MAX. K 0° 10 ° E 1.90 REF. L 0.95 REF. F 0.25 0.50

3.7A, 30V , R DS(ON) 55mΩ -2.7A, -30V , R DS(ON) 110mΩ N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 16-May-2018 Rev. B Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-Channel ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D =250 µA Gate Threshold Voltage V GS(th) 0.5 - 1.5 V V DS =V GS , I D =250 µA Forward Transconductance g fs - 4.3 - S V DS =5V, I D =3A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±12V Drain-Source Leakage Current T J=25° C IDSS - - 1 µA VDS =24V, V GS =0 TJ=70° C - - 25 V DS =24V, V GS =0 Static Drain-Source On-Resistance 4 R DS(ON) - - 55 m Ω VGS =10V, I D =3.4A - - 70 V GS =4.5V, I D =2.8A - - 95 V GS =2.5V, I D =1A Total Gate Charge Q g - 9.4 - nC ID =3.4A VDS =15V VGS =10V Gate-Source Charge Q gs - 1.6 - Gate-Drain Charge Q gd - 0.8 - Turn-on Delay Time T d(on) - 3.6 - nS VDS =15V ID =3.4A VGS =10V R G =6Ω Rise Time T r - 16.6 - Turn-off Delay Time T d(off) - 24.4 - Fall Time T f - 4.2 - Input Capacitance C iss - 315 - pF VGS =0 VDS =15V f=1MHz Output Capacitance C oss - 46 - Reverse Transfer Capacitance C rss - 33 - Source-Drain Diode Forward on Voltage 4 V SD - - 1 V I S=1A, V GS =0 Reverse Recovery Time t rr - 7.7 - nS IF=1A, V GS =0 dI/dt=100A/µs Reverse Recovery Charge Q rr - 3.3 - nC

3.7A, 30V , R DS(ON) 55mΩ -2.7A, -30V , R DS(ON) 110mΩ N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 16-May-2018 Rev. B Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-Channel ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250µA Gate Threshold Voltage V GS(th) -0.5 - -1.5 V V DS =V GS , I D = -250 µA Forward Transconductance g fs - 4 - S V DS = -5V, I D = -2.3A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±12V Drain-Source Leakage Current T J=25° C IDSS - - -1 µA VDS = -24V, V GS =0 TJ=70° C - - -10 VDS = -24V, V GS =0 Static Drain-Source On-Resistance 4 R DS(ON) - - 110 m Ω VGS = -10V, I D = -2.3A Total Gate Charge Q g - 11.4 - nC ID = -2.3A VDS = -15V VGS = -10V Gate-Source Charge Q gs - 1.3 - Gate-Drain Change Q gd - 0.7 - Turn-on Delay Time T d(on) - 4.4 - nS VDS = -15V ID = -2.3A VGS = -10V R G =6Ω Rise Time T r - 17.2 - Turn-off Delay Time T d(off) - 43 - Fall Time T f - 6.8 - Input Capacitance C iss - 480 - pF VGS =0 VDS = -15V f=1MHz Output Capacitance C oss - 63 - Reverse Transfer Capacitance C rss - 33 - Source-Drain Diode Forward on Voltage 4 V SD - - -1 V I S= -1A, V GS =0 Reverse Recovery Time t rr - 7 - nS IF= -1A, V GS =0 dI/dt=100A/µs Reverse Recovery Charge Q rr - 2.9 - nC Notes: 1. Surface Mounted on 1”x1” FR4 Board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature, Pulse Width ≦300 µs, Duty Cycle ≦2%. 4. Pulse Test: Pulse Width ≦300 µs, Duty Cycle ≦2%.

3.7A, 30V , R DS(ON) 55mΩ -2.7A, -30V , R DS(ON) 110mΩ N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 16-May-2018 Rev. B Page 4 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (N-Channel)

3.7A, 30V , R DS(ON) 55mΩ -2.7A, -30V , R DS(ON) 110mΩ N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 16-May-2018 Rev. B Page 5 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (N-Channel)

3.7A, 30V , R DS(ON) 55mΩ -2.7A, -30V , R DS(ON) 110mΩ N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 16-May-2018 Rev. B Page 6 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (P-Channel)

3.7A, 30V , R DS(ON) 55mΩ -2.7A, -30V , R DS(ON) 110mΩ N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 16-May-2018 Rev. B Page 7 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (P-Channel)