SST6301K SECOS | Alldatasheet
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0.06 0.5 1.5 100 0.5 0.5 V V uA uA uA nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD= 30V ID= 600mA VGS=10V RG=3.3 RD=52 Ω Ω ID=600mA VDS=50V VGS=4.5V VGS=10V, ID=500mA VGS=4.5V, ID=400mA VGS=0V, ID= 250uA VGS= 16V± VDS=30V,VGS=0 VDS= 24V,VGS=0 VDS=VGS, ID=250uA mS600 VDS=10V, ID=600mA__ 1.6 Co Reference to 25 ,I D= 1mACo / Tj Total Gate Charge RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Forward Transconductance Gfs Co Co 3__ VGS=2.7V, ID=200mA Electrical Characteristics( Tj=25 C Unless otherwise specified) o Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VS D __ IS=1.2A, VGS=0V.2 3.Surface mounted on 1 in copper pad of FR4 board; 180 V1.2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ O C/W when mounted on min. copper pad. Elektronische Bauelemente SST6301K 640mA, 30V,RDS(ON) 1.0 N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4
640mA, 30V,RDS(ON) 1.0 N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature
640mA, 30V,RDS(ON) 1.0 N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 180