SST41Z-600 SMCDIODE | Alldatasheet

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Data Sheet N2034, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST41Z-600/800B SST41Z-600/800BW SST41Z-1200/1600BW SST41 Series 40A TRIACs Circuit Diagram

Description

Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range TJ - -40 to +125 C Operating junction temperature range Tstg - -40 to +150 C Repetitive peak off-state voltage VDRM - 600/800/1200/1600 V Repetitive peak reverse voltage VRRM - 600/800/1200/1600 V Non repetitive peak off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) TO-3P(Ins)(TC=80℃) 40 A Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM - 400 A I2t value for fusing (tp=10ms) I2t - 880 A2s Critical rate of rise of on-state current (IG =2×IGT) dI/dt - 50 A/us Peak gate current IGM - 4 A Average gate power dissipation PGM - 1 W Peak gate power PG(AV) - 10 W With high ability to withstand the shock loading of large current, SST41 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, SST41Z provides a rated insulation voltage of 2500 VRMS. TO-3P Insulated

Data Sheet N2034, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST41Z-600/800B SST41Z-600/800BW SST41Z-1200/1600BW

3 Quadrants

Symbol Test Condition Quadrant Value Unit IGT VD =12V RL =33Ω Ⅰ-Ⅱ-Ⅲ MAX 50 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.3 V VGD VD =VDRM Tj =125℃ RL=3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V IL IG =1.2IGT Ⅰ-Ⅲ MAX 80 mA Ⅱ 100 IH IT =100mA MAX 60 mA dV/dt VD=2/3VDRM Gate Open Tj =125℃ MIN 1500 V/μs

4 Quadrants

Symbol Test Condition Quadrant Value Unit IGT VD =12V RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX mA Ⅳ 70 VGT ALL MAX 1.3 V VGD VD =VDRM Tj =125℃, RL =3.3KΩ ALL MIN 0.2 V IL IG =1.2IGT Ⅰ-Ⅲ-Ⅳ MAX mA Ⅱ 100 IH IT =100mA MAX 80 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ MIN 1000 V/μs Electrical Characteristics(Tj=25℃ unless otherwise specified) Static Characteristics Symbol Condition Max. Units VTM IT=60A tp=380μs,Tj=25℃ 1.5 V IDRM VD=VDRM VR=VRRM, Tj=25℃ 10 uA IRRM VD=VDRM VR=VRRM, Tj=125℃ 5 mA Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case(AC) TO-3P(Ins) 1.1 ℃/W

Data Sheet N2034, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST41Z-600/800B SST41Z-600/800BW SST41Z-1200/1600BW

Ordering Information

SST41Z-1200BW/SST41Z-1600BW TO-3P 30pcs/ Tube Marking Diagram Mechanical Dimensions TO-3P SYMBOL Millimeters Inches A 4.40 4.60 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.50 0.70 0.020 0.028 E 2.70 2.90 0.106 0.114 F 15.80 16.50 0.622 0.650 G 20.40 21.10 0.803 0.831 H 15.10 15.50 0.594 0.610 J 5.40 5.65 0.213 0.222 K 1.10 1.40 0.043 0.055 L 1.35 1.50 0.053 0.059 P 2.80 3.00 0.110 0.118 R 4.35 0.171 S ST 41 Z -600 BW SMC Diode Solutions Triacs BW:IGT1-3 ≤ 50mA B:IGT1-3 ≤ 50mA IGT4 ≤ 70mA 600:VDRM/VRRM ≥ 600V 800:VDRM/VRRM ≥ 800V 1200:VDRM/VRRM ≥ 1200V 1600:VDRM/VRRM ≥ 1600V IT(RMS):40A Z:TO-3P(Ins) Where XXXXX is YYWWL SST41Z-600B = Part name YY = Year WW = Week L = Lot Number

Data Sheet N2034, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST41Z-600/800B SST41Z-600/800BW SST41Z-1200/1600BW FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 10 20 30 40 50 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 TO-3P(Ins) α=180° FIG.3: Surge peak on-state current versus number of cycles FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponging value of I t (dI/dt < 50A/μs) FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles0 100 200 300 400 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 5 100 Tj=25℃ Tj=Tjmax tp(ms) 0.01 0.1 1 10 20 1000 ITSM (A), I t (A s) -40 -20 0 20 40 60 80 100 120 140 IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 500 2 2 Tj (℃) IH&IL IGT 400 10000 dI/dt t=20ms One cycle ITSM I t 100 Ratings and Characteristics Curves

Data Sheet N2034, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST41Z-600/800B SST41Z-600/800BW SST41Z-1200/1600BW DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..