SST3215

SST3215 SECOS | Alldatasheet

Document overview

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Technical content

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST3215 2.2A , 150V , R DS(ON) 315mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 25-Aug-2015 Rev. A Page 1 of 5 B L F HC JD G K A E 3 2 1 5 /boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen /UIrecord/UIrecord /UIrecord/UIrecord /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The SST3215 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is universally used for all commercial- industrial surface mount applications.

FEATURES

/circle6 Low on-resistance /circle6 Capable of 2.5V gate drive /circle6 Low drive current MARKING

PACKAGE INFORMATION

Parameter Symbol Ratings Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TC =25° C 2.2 TC =75° C 1.8 TA=25° C 1.7 Continuous Drain Current, VGS =10V 1 TA=75° C ID 1.4 A Pulsed Drain Current 2, 3 IDM 8 A TC =25° C 3.2 Power Dissipation TA=25° C PD W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating t≦5sec 62.5 Thermal Resistance Junction to Ambient 1 Steady State R ΘJA 125 Thermal Resistance Junction to Case 1 R ΘJC 39 ° C / W SOT-26 A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.4 0 1.80 J 0.12 REF. D 1.30 MAX. K 0° 10 ° E 1.90 REF. L 0.95 REF. F 0.30 0.50 D G D D D S

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST3215 2.2A , 150V , R DS(ON) 315mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 25-Aug-2015 Rev. A Page 2 of 5 ELECTRICAL CHARACTERISTICS (TJ =25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 150 - - V V GS =0, I D =250 µA Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Gate-Body Leakage Current I GSS - - ±100 nA VGS =±20V TJ=25 °C - - 1 Drain-Source Leakage Current T J=55 °C IDSS - - 10 µA VDS =120V, V GS =0 240 315 V GS =10V, I D =1.5A Drain-Source On-Resistance 2 R DS(ON) - 265 345 m Ω VGS =6V, I D =1.5A Forward Transconductance g fs - 2.5 - S V DS =15V, I D =1A Dynamic Total Gate Charge 2 Q g - 7.5 - Gate-Source Charge Q gs - 1.5 - Gate-Drain (“Miller”)Charge Q gd - 2 - nC VDS =75V, VGS =10V, ID =1.7A Turn-on Delay Time 2 T d(on) - 12 - Rise Time T r - 16 - Turn-off Delay Time T d(off) - 32 - Fall Time T f - 17 - nS VDS =75V, VGS =10V, R G =6Ω, ID =1A Input Capacitance C iss - 290 - Output Capacitance C oss - 30 - Reverse Transfer Capacitance C rss - 12 - pF VGS =0V VDS =30V, f=1.0MHz Source-Drain Diode Diode Forward Voltage 2 V SD - - 1.2 V I S=1.7A, V GS =0V Continuous Source Current 1, 2 I S - - 1.7 Pulsed Source Current 2, 3 I SM - - 5 A V G =V D =0V, Force Current Reverse Recovery Time T RR - 44.5 - nS Reverse Recovery Charge Q RR - 15.8 - nC IF=1.7A, dl/dt=100A/ µs, T J=25° C Notes: 1. Surface mounted on 1 inch 2 copper pad of FR4 board; 156° C/W when mounted on Min. copper pad. 2. The data tested by pulsed, pulse width 300≦ µs, duty cycle 2%≦ 3. The power dissipation is limited by 150° C junction temperature.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST3215 2.2A , 150V , R DS(ON) 315mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 25-Aug-2015 Rev. A Page 3 of 5 RATINGS AND CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST3215 2.2A , 150V , R DS(ON) 315mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 25-Aug-2015 Rev. A Page 4 of 5 RATINGS AND CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST3215 2.2A , 150V , R DS(ON) 315mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 25-Aug-2015 Rev. A Page 5 of 5 RATINGS AND CHARACTERISTIC CURVES