U308 LINEAR | Alldatasheet

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Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE NF = 2.7dB ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 150°C Junction Operating Temperature -55 to 135°C Maximum Power Dissipation Continuous Power Dissipation (J/SST) 350mW Continuous Power Dissipation (U) 500mW Maximum Currents Gate Current (J/SST) 10mA Gate Current (U) 20mA Maximum Voltages Gate to Drain -25V Gate to Source -25V COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage -25 IG = -1µA, VDS = 0V VGS(F) Gate to Source Forward Voltage 0.7 1 V IG = 10mA, VDS = 0V IG Gate Operating Current -15 pA VDG = 9V, ID = 10mA rDS(on) Drain to Source On Resistance 35 Ω VGS = 0V, ID = 1mA en Equivalent Noise Voltage 6 nV/√Hz VDS = 10V, ID = 10mA, f = 100Hz f = 105MHz 1.5 NF Noise Figure f = 450MHz 2.7 f = 105MHz 16 Gpg Power Gain2 f = 450MHz 11.5 dB f = 105MHz 14 gfg Forward Transconductance f = 450MHz 13 f = 105MHz 0.16 gog Output Conductance f = 450MHz 0.55 mS VDS = 10V, ID = 10mA D S BOTTOM VIEW TO-18 J SERIES TO-92 BOTTOM VIEW 123 DS G SST SERIES SOT-23 TOP VIEW D G S Linear Integrated Systems U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) J/SST308 J/SST309 J/SST310 SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS VGS(off) Gate to Source Cutoff Voltage -1 -6.5 -1 -4 -2 -6.5 V VDS = 10V, ID = 1nA IDSS Source to Drain Saturation Current3 12 60 12 30 24 60 mA VDS = 10V, VGS = 0V Ciss Input Capacitance 4 5 5 5 Crss Reverse Transfer Capacitance 1.9 2.5 2.5 2.5 pF VDS = 10V, VGS = -10V f = 1MHz gfs Forward Transconductance 14 8 10 8 mS gos Output Conductance 110 250 250 250 µS VDS = 10V, ID = 10mA f = 1kHz Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) U308 U309 U310 SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS VGS(off) Gate to Source Cutoff Voltage -1 -6.5 -1 -4 -2.5 -6.5 V VDS = 10V, ID = 1nA IDSS Source to Drain Saturation Current3 12 60 12 30 24 60 mA VDS = 10V, VGS = 0V Ciss Input Capacitance 4 5 5 5 Crss Reverse Transfer Capacitance 1.9 2.5 2.5 2.5 pF VDS = 10V, VGS = -10V f = 1MHz gfs Forward Transconductance 14 10 10 10 mS gos Output Conductance 110 250 250 250 µS VDS = 10V, ID = 10mA f = 1kHz TO -18 Three Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

3 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 12 3 LS XXX YYWW 0.170 0.195 0.500 0.610 0.016 0.022 0.095 0.105 0.045 0.055 0.175 0.195 0.130 0.155 0.045 0.060 0.014 0.020 TO-92 DIMENSIONS IN INCHES. SOT-23 DIMENSIONS IN MILLIMETERS 0.89 1.03 1.78 2.05 1.20 1.40 2.10 2.64 0.37 0.51 2.80 3.04 0.89 1.12 0.013 0.100 0.085 0.180 0.55 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Measured at optimum input noise match. 3. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems. n or