SST24 SMCDIODE | Alldatasheet

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Data Sheet N2167, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST24 Series SST24 Series 25A TRIACs Circuit Diagram

Description

Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range Tstg - -40-150 ℃ Operating junction temperature range Tj - -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM - 800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 800 V Non repetitive surge peak Off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) TO-220A(Ins)(TC=75℃)

25 ATO-220C(TC=90℃)

TO-263 (TC=70℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM - 250 A I2t value for fusing (tp=10ms) I2t - 340 A2s Critical rate of rise of on-state current (IG=2×IGT) dI/dt - 50 A/μs Peak gate current IGM - 4 A Average gate power dissipation PG(AV) - 1 W Peak gate power PGM - 10 W With high ability to withstand the shock loading of large current, SST24 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended focus on inductive load. TO-220C TO-220A(Ins) K(1) G(3) 123 TO-220A Insulated 123 TO-220B Non-Insulated TO-220F InsulatedTO-220C A(2) TO-263 123 123 1 3 TO-263

Data Sheet N2167, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST24 Series Symbol Parameter Value(MAX) Unit VTM ITM =35A tp=380μs Tj=25℃ 1.5 V IDRM VD =VDRM VR =VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 3 mA Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit BW CW IGT VD =12V RL =33Ω Ⅰ-Ⅱ-Ⅲ MAX 50 35 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.3 V VGD VD =VDRM Tj =125℃ RL =3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V IL IG =1.2IGT Ⅰ-Ⅲ MAX 80 70 mA Ⅱ 100 80 IH IT =100mA MAX 75 50 mA dV/dt VD=2/3VDRM Gate Open Tj =125℃ MIN 1000 500 V/μs Static Characteristics Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case(AC) TO-220A(Ins) 1.5 ℃/W TO-220C 1.1 ℃/W TO-263 2.1 ℃/W

Data Sheet N2167, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST24 Series

Ordering Information

SST24A-800CW, SST24A-800BW TO-220A(Ins) 50pcs/ Tube SST24C-800CW, SST24C-800BW TO-220C 50pcs/ Tube SST24E-800CW, SST24E-800BW TO-263 800pcs/ Tape Marking Diagram Mechanical Dimensions TO-220A(Ins) SYMBOL Millimeters Inches A 4.40 4.60 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.60 10.4 0.378 0.409 F 6.55 6.95 0.258 0.274 G 2.54 0.1 H 28.0 29.8 1.102 1.173 L1 3.75 0.148 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 V1 45° 45° Where XXXXX is YYWWL SST24A-800BW = Part name SST24C-800BW = Part name SST24E-800BW = Part name YY = Year WW = Week L = Lot Number S ST 24 A -800 BW SMC Diode Solutions Triacs BW: IGT1-3 ≤ 50mA CW: IGT1-3 ≤ 35mA 800:VDRM/VRRM ≥ 800V IT(RMS):25A A: TO-220A(Ins) C:TO-220C E:TO-263

Data Sheet N2167, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST24 Series Mechanical Dimensions TO-220C SYMBOL Millimeters Inches A 4.40 4.60 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.60 10.4 0.378 0.409 F 6.20 6.60 0.244 0.260 G 2.54 0.1 H 28.0 29.8 1.102 1.173 L1 3.75 0.148 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 V1 45° 45° Mechanical Dimensions TO-263 SYMBOL Millimeters Inches A 9.90 10.20 0.390 0.402 A1 4.95 5.10 0.195 0.201 B 14.70 15.80 0.579 0.622 C 9.40 9.60 0.370 0.378 C1 4.70 4.80 0.185 0.189 D 2.54 0.100 D1 7.20 E 1.20 1.40 0.047 0.055 E1 7.60 F 0.75 0.85 0.029 0.033 G 1.75 0.069 H 4.40 4.70 0.173 0.185 J 2.30 2.70 0.091 0.106 K 0.38 0.55 0.015 0.022 L 0 0.10 0.25 0 0.004 0.010 L1 2.24 2.84 0.088 0.112 ΦP 1.00 1.50 0.039 0.059 M 1.25 1.35 0.049 0.053

Data Sheet N2167, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST24 Series FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 5 10 15 20 25 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 TO-220A(Ins) TO-220B(Non-Ins) α=180° Foot Print TO-263 (dimensions in mm) Ratings and Characteristics Curves TO-220C

Data Sheet N2167, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST24 Series FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles0 120 180 240 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 5 100 Tj=25℃ Tj=125℃ 300 200 t=20ms One cycle FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponging value of I t (dI/dt < 50A/μs) tp(ms) 0.01 0.1 1 10 20 100 1000 ITSM (A), I t (A s) -40 -20 0 20 40 60 80 100 120 140 IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 2 Tj (℃) IH&IL IGT 4000 dI/dt I t ITSM

Data Sheet N2167, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST24 Series DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..