SST2301J SECOS | Alldatasheet
Document overview
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Technical content
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST2301J -2.3A , -20V , R DS(ON) 90 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 09-Dec-2015 Rev. A Page 1 of 3 B L F HC JD G K A E RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST2301J utilizes advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. SOT-26 package is universally used for all commercial-industrial applications.
FEATURES
/circle6 TrenchFET power MOSFET
APPLICATIONS
/circle6 DC/DC converter /circle6 Load switch for portable devices MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Power Dissipation PD 0.35 W Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Thermal Resistance Rating Thermal Resistance from Junction to Ambient R θJA 357 ° C / W SOT-26 A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.30 MAX. K 0° 10 ° E 1.90 REF. L 0.95 REF. F 0.30 0.50
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST2301J -2.3A , -20V , R DS(ON) 90 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 09-Dec-2015 Rev. A Page 2 of 3 ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Drain-Source Breakdown Voltage BV DSS -20 - - V V GS =0, I D = -250 µA Drain-Source Leakage Current I DSS - - -1 µA V DS = -20V, V GS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0V, VGS = ±8V Gate-Threshold Voltage 1 V GS(th) -0.4 -0.7 -1 V V DS =V GS , I D = -250 µA - 58 90 V GS = -4.5V, I D = -2.5A - 80 125 V GS = -2.5V, I D = -2A Drain-Source On-Resistance 1 R DS(ON) - 120 200 m Ω VGS = -1.8V, I D = -1.6A Forward Transconductance 1 g fs 4 - - S V DS = -5V, I D = -2.8A Diode Forward Voltage 1 V SD - - -1.2 V I S= -0.7A, V GS =0 Dynamic Input Capacitance C iss - 405 - Output Capacitance C oss - 75 - Reverse Transfer Capacitance C rss - 55 - pF VDS = -10V VGS =0 f=1MHz Switching Turn-on Delay Time T d(on) - 20 - Rise Time T r - 60 - Turn-off Delay Time T d(off) - 50 - Fall Time T f - 20 - nS VDD = -10V VGEN = -4.5V R GEN =1Ω R L=10 Ω ID = -1A -4.5V - 5.5 - Total Gate Charge -2.5V Q g - 3.3 - Gate-Source Charge Q gs - 0.7 - Gate-Drain Charge Q gd - 1.3 - nC VDS = -10V VGS = -2.5V ID = -3A Notes: 1. Pulse Test : Pulse width 300µ≦ s, duty cycle≦0.5%
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SST2301J -2.3A , -20V , R DS(ON) 90 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 09-Dec-2015 Rev. A Page 3 of 3 CHARACTERISTIC CURVES