SST04K-800SW SMCDIODE | Alldatasheet

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Technical content

Data Sheet N2078, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST04K-800SW SST04K-800SW 4A TRIACs Circuit Diagram

Description

Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range Tstg - -40 - 150 ℃ Operating junction temperature range Tj - -40 - 125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM - 800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 800 V Non repetitive surge peak Off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) TO-252-4R (TC=86℃) 4 A Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM - 40 A I2t value for fusing (tp=10ms) I2t - 8 A2s Critical rate of rise of on-state current (IG =2×IGT) dI/dt 50 A/μs Peak gate current IGM - 4 A Average gate power dissipation PGM - 1 W Peak gate power PG(AV) - 5 W With high ability to withstand the shock loading of large current, SST04K-800SW triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. DPAK

Data Sheet N2078, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST04K-800SW Symbol Test Condition Quadrant Value Unit SW IGT VD =12V RL =33Ω Ⅰ-Ⅱ-Ⅲ MAX 10 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.5 V VGD VD =VDRM Tj =125℃ RL =3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN 0.2 V IL IG =1.2IGT Ⅰ-Ⅲ MAX 20 mA Ⅱ 35 mA IH IT =100mA MAX 15 mA dV/dt VD=2/3VDRM Gate Open Tj =125℃ MIN 100 V/µA Electrical Characteristics(Tj=25℃ unless otherwise specified) Static Characteristics Symbol Condition Max. Units VTM IT=5.5A tp=380μs,Tj=25℃ 1.6 V IDRM VD=VDRM VR=VRRM, Tj=25℃ 5 μA IRRM VD=VDRM VR=VRRM, Tj=125℃ 0.5 mA Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case(AC) TO-220C 2.5 ℃/WDPAK 2.8

Ordering Information

SST04K-800SW DPAK 2500pcs/ Reel S ST 04 K -800 SW SMC Diode Solutions Triacs SW: IGT1-3 ≤ 10mA 800:VDRM/VRRM ≥ 800V IT(RMS):4A K: DPAK

Data Sheet N2078, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST04K-800SW FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 1 2 3 4 5

0 IT(RMS) (A) Tc (℃)0

α=180° FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 5 0.1 50 40 Tj=25℃ Tj=Tjmax t=20ms One cycle Marking Diagram Ratings and Characteristics Curves Where XXXXX is YYWWL SST04K-800SW = Part name YY = Year WW = Week L = Lot Number

Data Sheet N2078, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST04K-800SW FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms and corresponding value of I t (dI/dt < 50A/μs) tp(ms) 0.01 0.1 1 10 20 ITSM (A), I t (A s) -40 -20 0 20 40 60 80 100 120 140 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.5 2.0 1.0 2.5 Tj(℃) 100 500 IGT I t IH&IL dI/dt ITSM DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..