SSS8205 VBSEMI | Alldatasheet

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  • Halogen-free Option Available  TrenchFET ® Power MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) 0.024 at VGS = 4.5 V 6.0 0.028 at VGS = 2.5 V 5.0 Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID 6.0 5.2 A TA = 70 °C 4.8 4.2 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C PD 1.5 1.0 WTA = 70 °C 0.96 0.64 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 72 83 °C/WSteady State 100 120 Maximum Junction-to-Foot (Drain) Steady State RthJF 55 70 Available Pb-free RoHS* COMPLIANT D D D1/D2 TSOP6 Top View D1/D2 G11 SSS8205 www.VBsemi.com  100 % R g Tested  Compliant to RoHS Directive 2002/95/EC g A ll data sheet.com

Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.5 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 200 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µAVDS = 20 V, VGS = 0 V, TJ = 70 °C 25 On-State Drain Currentb ID(on) VDS ≤ 5 V, VGS = 4.5 V 30 A Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 5.5 A 0.024 ΩVGS = 2.5 V, ID = 3.5 A 0.028 Forward Transconductanceb gfs VDS = 10 V, ID = 5.5 A 30 S Diode Forward Voltageb VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 5.5 A 12 18 nCGate-Source Charge Qgs 2.2 Gate-Drain Charge Qgd 3.6 Tur n-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 245 365 ns Rise Time tr 330 495 Turn-Off Delay Time td(off) 860 1300 Fall Time tf 510 765 Gate-Current vs. Gate-Source Voltage 0 3 6 9 12 15 18 - Gate Current (mA)IGSS VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 0369 1 2 15 0.01 100 10000 T J = 25 °C - Gate Current (A) I GSS 0.1 1000 V GS - Gate-to-Source Voltage (V) T J = 150 °C www.VBsemi.com SSS8205 g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 0.5 1.0 1.5 2.0 4.5 6.0 012345 VGS = 5 thru 3 V 2 V 2.5 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 VGS = 4.5 V VGS = 2.5 V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 V GS = 4.5 V I D = 5.5 A TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) Transfer Characteristics Gate Charge Source-Drain Diode Forward Voltage 0.5 1.0 1.5 2.0 2.5 6.0 T C = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C 0 3 6 9 12 15 V DS = 10 V I D = 5.5 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS 1.2 1.5 0.1 0 0.3 0.6 0.9 T J = 25 °C T J = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A) IS www.VBsemi.com SSS8205 1 V g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0 123456 ID = 5.5 A - On-Resistance (Ω)R DS(on) VGS - Gate-to-Source Voltage (V) 0.001 160 200 100.1 Power (W) Time (s) 120 0.01 Threshold Voltage Safe Operating Area, Junction-to-Case - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 I D = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) 0.1 1 10 100 0.01 5 1 ms - Drain Current (A)ID 0.1 Limited by RDS(on)* T C = 25 °C Single Pulse 10 ms 100 ms DC 10 s 1 s VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 100 600 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 11 5 °C/W 3. T JM - T A = P DM Z th J A (t ) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance www.VBsemi.com SSS8205 g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance www.VBsemi.com SSS8205 g A ll data sheet.com

L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 www.VBsemi.com SSS8205 g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) www.VBsemi.com SSS8205 g A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, emplo yees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assum es no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any di sclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arisi ng out of or use of any products; (2) any and all liability, including but not limited to special, consequential dam ages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merch antability guarantee. Statement on certain types of applications are based on kno wledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-bi nding. It is the customer's responsibility to verify specific product features in the products described in the specificat ion is appropriate for use in a particular application. Parameter data sheets and technical specifications can b e provided may vary depending on the application and performance over time. All operating parameters, including t ypical parameters must be made by customer's technical experts validated for each customer applicati on. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products a re not intended for use in medical, life saving, or life sustaining applications or any other applicatio n. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi s uch applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who a re related to product design applications and other terms and conditions in writing. The information provided in this document and the company' s products without a license, express or implied, by estoppel or otherwise, to any intellectual property right s granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their res pective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain h azardous substances in electrical and electronicequipment(EEE)-modification,unlessotherwisesp ecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemi RoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Dire ctive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS70 9A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, a nd we are sure that all products conformtoconfirmcompliancewithIEC61249-2-21standardlevel JS709A. www.VBsemi.com SSS8205 A ll data sheet.com