SSS4008J8L SILIKRON | Alldatasheet
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©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:preliminary page1of7 MainProductCharacteristics: PinAssignments MainFeatures
Description
Symbol Parameter Max. Units ID@TC=25°C ContinuousDrainCurrent,VGS @ 10V① 68 A IDM PulsedDrainCurrent ② 125 PD @TC=25°C PowerDissipation ③ 1.67 W EAS SinglePulseAvalancheEnergy@L=0.1mH 31 mJ VDS Drain-SourceVoltage 40 V VGS Gate-to-SourceVoltage ±20 V TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 40V RDS(on) 6.9mΩ(typ.) ID 68A SchematicDiagram AdvancedMOSFETprocesstechnology Special designed for PWM, load switching and generalpurposeapplications Ultralowon-resistancewithlowgatecharge Fastswitchingandreversebodyrecovery 150℃ operatingtemperature Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications. PDFN3*3-8L
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:preliminary page2of7 ThermalResistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 30 ℃/W RθJA Junction-to-ambient(t ≤ 10s) ④ — 85 ℃/W ElectricalCharacteristics@TA=25℃ unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 40 — — V VGS =0V,ID =250μA RDS(on) StaticDrain-to-Sourceon-resistance — 6.9 8.5 mΩ VGS=10V,ID =12A — 10.5 15 VGS=4.5V,ID =10A VGS(th) Gatethresholdvoltage 1.2 — 2.5 V VDS =VGS,ID =250μA IDSS Drain-to-Sourceleakagecurrent — — 1 μA VDS =32V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS =20V — — -100 VGS =-20V Qg Totalgatecharge — 5.8 — nC ID =12A, VDS=20V, VGS =4.5V Qgs Gate-to-Sourcecharge — 3 — Qgd Gate-to-Drain("Miller")charge — 1.2 — td(on) Turn-ondelaytime — 14.3 — ns VDD=15V,VDS=10V, RGEN=3.3Ω ID =1A tr Risetime — 5.6 — td(off) Turn-Offdelaytime — 20 — tf Falltime — 11 — Ciss Inputcapacitance — 690 — pF VGS =0V VDS =15V ƒ=1MHz Coss Outputcapacitance — 193 — Crss Reversetransfercapacitance — 38 — Source-DrainRatingsandCharacteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — 30 A MOSFETsymbol showing the integralreverse p-njunctiondiode. VSD DiodeForwardVoltage — — 1 V IS=1A,VGS=0V
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:preliminary page3of7 TestcircuitsandWaveforms EASTestCircuit: Gatechargetestcircuit: SwitchingTimeTestCircuit: SwitchingWaveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PDisbased onmax. junctiontemperature, usingjunction-to-casethermal resistance. ④Thevalue ofRθJA is measuredwith the devicemounted on 1in2FR-4 board with 2oz. Copper,in a still airenvironmentwith TA=25°C
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:preliminary page4of7 TypicalElectricalandThermalCharacteristics Figure1.Typ.OutputCharacteristics Figure2.On-Resistancevs.G-SVoltage Figure3.Typ.Capacitance Figure4.Typ.GateCharge Figure5.SafeOperationAreaTc=25℃ Figure6.SourceDrainForwardCharacteristics
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:preliminary page5of7 TypicalElectricalandThermalCharacteristics Figure7.Max.TransientThermalImpedance
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:preliminary page6of7 MechanicalData：
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:preliminary page7of7 ATTENTION: ■ AnyandallSilikronproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplications thatrequireextremelyhighlevelsofreliability,suchaslife-supportsystems,aircraft'scontrolsystems,orother applicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage. ConsultwithyourSilikronrepresentativenearestyoubeforeusinganySilikronproductsdescribedorcontained hereininsuchapplications. ■ Silikronassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed, evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallSilikronproductsdescribedorcontainedherein. ■ SpecificationsofanyandallSilikronproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomer shouldalwaysevaluateandtestdevicesmountedinthecustomer’sproductsorequipment. ■ SilikronMicroelectronics(Suzhou)Co.,Ltd.strivestosupplyhigh-qualityhigh-reliabilityproducts.However,anyand allsemiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverise to accidentsoreventsthatcouldendangerhumanlives,thatcouldgiverisetosmokeorfire,orthatcouldcause damagetootherproperty.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsor eventscannotoccur.Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsfor safedesign,redundantdesign,andstructuraldesign. ■ IntheeventthatanyorallSilikronproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexported withoutobtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. ■ Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofSilikronMicroelectronics(Suzhou)Co.,Ltd. ■ Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction.Silikronbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. ■ Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticedueto product/technologyimprovement,etc.Whendesigningequipment,refertothe"DeliverySpecification"forthe Silikronproductthatyouintendtouse.