SSS3N90A FAIRCHILD | Alldatasheet

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Advanced Power MOSFET SSS3N90A FEATURES BVpss = 900 V li Avalanche Rugged Technology R =620 M@ Rugged Gate Oxide Technology ‘DSjon) ~ Lower Input Capacitance Ip = 2A improved Gate Charge I Extended Safe Operating Area Mi Lower Leakage Current : 25 yA (Max) @ Vyg = 900V TO-220F HM Low Rosiow > 4.879 2 (Typ.) ya 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Drain-Source Votage Continuous Drain Current (T.=25 °C) a Continuous Drain Curent (Te=100°C) | 13 | low [Drain Current-Pulsed of a [Exe | Siole Pulsed Avainche Every | 260 | _mi | |___ Exe | Repetitive Avalanche Energy (ee Pesk Dede Recovery duit | 15 | Vs | Total Power Dissipation (T.=25 °C) 35 w Linear Derating Factor 0.28 wi°c Operating Junction and Ty + Tero Storage Temperature Range ~86 to +150 - : Maximum Lead Temp. for Soldering c ‘ Purposes, 1/8" from case for 5-seconds Thermal Resistance [symbol [Characteristic Typ. [Max | units | | Rec | sunctionto-case | TT ty L_ Rew [| sunction-to-ambient |= 025 Es Rev. FAIRCHILD SS SEMICONDUCTOR™ (1008 Pabet Garveonéut Caperatoe

Electrical Characteristics (T,=25 °C unless otherwise specified) [ Symbol | Characteristic [Min.|Typ.[Max [Units] Test Condition | | 8Voss [Drain-Source Breakdown Votage | 000] — | — | v | Vos=0V.ip=26004 | | ABV/ST, | Breakdown Voltage Temp. Coeft.| ~ [1.13| — [wic|t=250,A See Fig7 | | Voom» [Gate Threshold Voitage [20| - [35] v | Vosr5Vlj=250KA | lowe [Gate-Source Leakage. Forward | - | - [roo] |, [GGate-source Leakage. Reverse | —~ | — |-100| [om | Deano Sowee Lestsge Corent [— [= [as0| Static Drain-Source [rom [onsue nae |= | = [02] 0 [rrrorarn |_o [Forward Transconductance | = [1.78] — | @ [Voe=50V.=1A © | [Cu [input Capactance ‘| — | 800 | 770] — [Gum [Output Capacitance | = | 85 | 05 | pr | VowrONVer2ovs=tMis [Cam [Reverse Transfer Capactance | — | 22 | 28 | i [tay [TumOn Dey Time ‘| - | 10 | 40 | Voo=450V,,=3A, [& [Ree time | = foe [reo] | Neer [teen _[Tem-O# Delay Tne | — | a7 | 105] Skwis @0 [4 [Fan time ———SSC«i | 2 f 00 ee Fig | &% [Total Gate charge | = | 28 | 37 | | Vog=720V.Voe=t0V. | OQ. [GateSource Chae | = [5.5 | — | nc | Ip=3A L_ Qs [Gate-Drain(“Miler”) Chae | = [118] - |__| See Fig 6&Fig 12 © © Source-Drain Diode Ratings and Characteristics [Symbot | __ Characters |Win] yp. [ax [Unis] Test Condiion | [ts | Contnoous Source Curent | - | — | 2 | , | integralreverse pniode [tus | Pulses-Source Curent @| - | - [12 | “ |intemosret [Veg [Diode Forward Votage _@ | — | - [14] V | T 28 =2ANaanOV_| [| Reverse Recovery Tme | — [280] — | ms [T25°C y=3a [ “a, [Reverse Recovery Crave [= [12 [= [re | ayers00as © Notes ; Repetitive Rating : Pulse Widtn Limited by Maximum Junction Temperature L=135MH, I,2"2A, Voo"S0V, Rg=272, Starting T,-25 °C Ign S 3A, GUC S9DA/uS, Veg S BVpgg, Starting T,=25 °C Pulse Test : Pulse Width = 250 us, Duty Cycle £2% Essentially independent of Operating Temperature Es FAIRCHILD Ee SEMICONDUCTOR™

Fig 1. Output Characteristics Fig 2. Transfer Characteristics ” Ss Se 8 eS ESS eb eee en ee ee oe ee ey fe <a nl —— -/ 3s Eee Eahd= 433) 7 Te, = “9 F fF wy ‘ ¢ . > Vig ¢ OrmlerStumce Voltage (V) Ye, Geto Vitae Fig 3. On-Resistance vs. Drain Current = Fig 4. Source-Drain Diode Forward Voltage 3° ! ! ed SS ee ; i a <I4=== 86-1... | “FEEEHEEYE=EFs= =g=== 23 a a o.\\ poe] : ee pe on cn i yu H ‘ H fot} 4A 4 ee ee eee Sa a i i ont: <3 a *% 3 6 . 2 we u os oe a sd Ty + Demin Qarent A Vp» Saueerfenin Voltage [) Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage STL Ld ey Grae | . ro. i Td “TTT Se Fs ee ee oh a RR EO ee eee re ee Fe bob ft a eee A ee [a Ses hs eG 8 é | | | | | ¥ i a a | Vig + CrmiprScurae Voitage [¥) Q, heal Gee Cay i Es FAIRCHILD es SEMICONDUCTOR™

? Fig 7. Breakdown Voltage ve. Temperature Fig 8. On-Resistance ve. Temperature § Srap fff qedti peop} og et pp A a A ey i tttlt Serer Fae a <a “= = “a, ection 2 s :< m PT s a * Oectien » * Ped m PT ww 2 ‘Geo Coo spre ace PSs] STOTT CWEEHET ip-at (SSS ESed ia a Se SD, we w ww w “SE = 2 = 3S ™ Vig + DrmirrSeunce Voltage [V] T, , Gam Tapas [°C Fig 11. Thermal Response aii mada mili) eel EE i wit f sl i sl i sl i ae H il i al t, » Square Wave Pulse Duration [sec] ped FAIRCHILD Sconeoeen

Fig 12. Gate Charge Test Circutt & Waveform * Current Regulator * -—| v (| Same Type * xe. as DUT Q "TTT pa ™ Vos AY — ° (3) DUT aoa _—— Tt R R, Current Sampling (Iq) Cument Sampling (Ip) Charge Rexaioe Rewwnt Fig 13. Resistive Switching Test Circuit & Waveforms . R, Ven Vea Va Voo (OS rated Vg) Re DUT Va 10V kes ears te tar Fig 14. Unciamped Inductive Switching Test Circuit & Waveforms BV, 1 pes L E..= = LL @-— Vow L as “QU BV ins — Vow Vary 4, t9 obtain cr, BV pss required peak I, +? Ins GA) 4: te. DUT Yoo Vos(t) ow TDS Es FAIRCHILD es SEMICONDUCTOR™

+ POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT | . (44) v [|] Is 59 L y Dnver Vos — Same Type fe. (49) ‘DUT Vop ES Vos + dviét controlled by R,0 +1, controlled by Duty Factor D - Gate Pulses Width Von > -Sae Base Brad lv (Driver ) (DUT) ailat Taw Body Diods Reverse Current Vos (DUT) Body Diode Recovery dvidt Vv; Veo Body Diods Forward Veltage Drop Es FAIRCHILD es SEMICONDUCTOR™

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