SSS1510J7 SILIKRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 8
Technical content
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page1of8 Main Product Characteristics: Features and Benefits: Description: AbsoluteMax Rating: Symbol Parameter Max. Units ID @ TC = 25° C Continuous Drain Current, VGS @ 10V① 80 A IDM Pulsed Drain Current② 240 PD @TC = 25° C Power Dissipation③ 160 W VDS Drain-Source Voltage 150 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 80 mJ TJ TSTG Operating Junction and Storage TemperatureRange -55 to +150 °C VDSS 150V RDS(on) 9mΩ(typ.) ID 80A Pin Assignments Schematic Diagram Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature It utilizes the latestprocessing techniquesto achieve the high cell density and reduces the on-resistancewith high repetitiveavalanche rating. These features combine to makethis design an extremely efficient and reliable devicefor use in power switching applicationand a wide varietyof otherapplications. PDFN 5x6-8L
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page2of8 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 0.78 ℃/W Electrical Characterizes@TA=25℃unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 150 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 9 10 mΩ VGS=10V,ID =20A VGS(th) Gate threshold voltage 3 — 4.5 V VDS = VGS, ID =250μA IDSS Drain-to-Source leakage current — — 1 μA VDS =135V,VGS = 0V IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V Qg Total gate charge — 70 — nC ID = 44A, VDS=75V, VGS = 10V Qgs Gate-to-Source charge — 27 — Qgd Gate-to-Drain("Miller") charge — 18 — td(on) Turn-on delay time — 21 — ns VGS=10V, VDS=75V, RGEN=2Ω ID = 44A tr Rise time — 21 — td(off) Turn-Off delay time — 36 — tf Fall time — 9 — Ciss Input capacitance — 5130 — pF VGS = 0V VDS =25V ƒ = 100kHz Coss Output capacitance — 1670 — Crss Reverse transfercapacitance — 175 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 80 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 240 A VSD Diode Forward Voltage — — 1.3 V IS=20A, VGS=0V trr Reverse Recovery Time — 75 — ns IF=IS,di/dt=100A/us Qrr Reverse Recovery Charge — 285 — nC
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page3of8 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuous current based on maximum allowablejunction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance.
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page4of8 Typical Electrical and Thermal Characteristics Figure1.Typical Output Characteristics Figure2.Drain-to-Source Breakdown Voltage vs. Temperature Figure3.Gate to Source Cut-off Voltage Figure4.Normalized On-Resistance vs. Junction Temperature Figure5.Typical Transfer Characteristics Figure6. Typ. Gate Charge
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page5of8 Typical Electrical and Thermal Characteristics Figure8.Capacitance Figure10. Normalized Maximum Transient Thermal Impedance Figure7.Forward Characteristics of Body Diode Figure9. Maximum Safe Operating Area
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page6of8 Mechanical Data： Option1
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page7of8 Option2
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page8of8 ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Microelectronics (Suzhou) Co.,Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Microelectronics (Suzhou) Co.,Ltd. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use.