SSS1510 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 100 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 93 I DM Pulsed Drain Current 400 A Power Dissipation 300 W P D @TC = 25°C Linear Derating Factor 2.0 W/°C V DS Drain-Source Voltage 150 V V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy @ L=0.3mH 1026 mJ I AS Avalanche Current @ L=0.3mH 82.7 A T J T STG Operating Junction and Storage Temperature Range -55 to +175 °C V DSS 150V R DS (on) 9.8mΩ (typ.) I D 100A TO-220 Marking and Pin Assignment Schematic Diagram  Advanced Process T echnology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case — 0.5 °C/W Junction-to-ambient (t ≤ 10s) — 62 °C/W R θJA Junction-to-Ambient (PCB mounted, steady-state) °C/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 150 — — V V GS = 0V, I D = 1mA — 9.8 10.8 mΩ V GS =10V,I D =100A R DS(on) Static Drain-to-Source on-resistance — 10 11 mΩ V GS =8V,I D =50A 2.0 — 4.0 V DS = V GS , I D =250μA V GS(th) Gate threshold voltage — 2.3 — V T J = 125°C — — 1 V DS =120V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V t d(on) Turn-on delay time — 33 — t r Rise time — 105 — t d(off) Turn-Off delay time — 73 — t f Fall time — 19 — nS V GS =10V, V DD =75V, R L =0.75Ω, R GEN =1.6Ω I D =100A C iss Input capacitance — 5634 — C oss Output capacitance — 657 — C rss Reverse transfer capacitance — 12.6 — pF V GS = 0V V DS = 50V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 100 A I SM Pulsed Source Current (Body Diode) — — 400 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.94 1.3 V I S =100A, V GS =0V, T J = 25°C

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max ФP1 1.500 0.059 e ϴ1 - 7 - - 7 ϴ2 - 7 - - 7 ϴ3 - 3 - 5 ϴ4 - 3 - 1 Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC TO-220 PACKAGE OUTLINE DIMENSION_GN E D ФP A ce b ϴ2 ϴ L ФP1 E

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSS1510 Package (Available) TO-220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-220 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices