SSS10R20BFU SILIKRON | Alldatasheet
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©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:1.0 page1of6 MainProductCharacteristics FeaturesandBenefits
Applications
Description
Symbol Parameter Max. Units ID@TC=25°C ContinuousDrainCurrent,VGS @ 10V① 8 A IDM PulsedDrainCurrent② 32 PD @TC=25°C PowerDissipation③ 3.5 W VDS Drain-SourceVoltage 100 V VGS Gate-to-SourceVoltage ±20 V EAS SinglePulseAvalancheEnergy@L=0.5mH 42 mJ IAS AvalancheCurrent@L=0.5mH 13 A TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 100V RDS(on) 17mΩ(typ.) ID 8A① SOP-8 SchematicDiagram LowRDS(on)&FOM Extremelylowswitchingloss Excellentstabilityanduniformity Fastswitchingandreversebodyrecovery 150℃ operatingtemperature Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications. Consumerelectronicpowersupply Motorcontrol Synchronous-rectification IsolatedDC/DCconvertor
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:1.0 page2of6 ThermalResistance Symbol Characterizes Typ. Max. Units RθJA Junction-to-ambient(t ≤ 10s) ④ — 35.7 °C/W ElectricalCharacterizes@TA=25℃ unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 100 — — V VGS =0V,ID=250uA RDS(on) StaticDrain-to-Sourceon-resistance — 16 20 mΩ VGS=10V,ID =10A — — 26 VGS=4.5V,ID =7A VGS(th) Gatethresholdvoltage 1 — 2.5 V VDS =VGS,ID =250μA IDSS Drain-to-Sourceleakagecurrent — — 1 μA VDS =100V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS =20V — — -100 VGS =-20V Qg Totalgatecharge — 19 — nC ID =5A, VDS=50V, VGS =10V Qgs Gate-to-Sourcecharge — 2.5 — Qgd Gate-to-Drain("Miller")charge — 5 — td(on) Turn-ondelaytime — 8.1 — ns VGS=10V,VDD =50V, RGEN=3Ω ID =10A tr Risetime — 11.7 — td(off) Turn-Offdelaytime — 23.3 — tf Falltime — 5.7 — Ciss Inputcapacitance — 927 — pF VGS =0V VDS =50V ƒ=1MHz Coss Outputcapacitance — 108 — Crss Reversetransfercapacitance — 2.5 — Source-DrainRatingsandCharacteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode)① — — 8 A MOSFETsymbol showing the integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — 32 A VSD DiodeForwardVoltage — — 1.3 V IS=20A,VGS=0V,TJ =25°C trr ReverseRecoveryTime — 50 — ns TJ = 25°C, IF =5A, di/dt = 100A/μsQrr ReverseRecoveryCharge — 65 — nC
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:1.0 page3of6 TestCircuitsandWaveforms EASTestCircuit: GateChargeTestCircuit: SwitchingTimeTestCircuit: SwitchingWaveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PDisbased onmax. junctiontemperature, usingjunction-to-casethermal resistance. ④Thevalue ofRθJA is measuredwith the devicemounted on 1in2FR-4 board with 2oz. Copper,in a still airenvironmentwith TA=25°C
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:1.0 page4of6 TypicalElectricalandThermalCharacteristics Figure2.GatetoSourceCut-offVoltageFigure1.TypicalOutputCharacteristics Figure3.TypicalCapacitances Figure4.Drain-to-SourceOn-stateResistance Figure5.Drain-to-SourceBreakdownVoltage Figure6.SafeOperationArea(TC=25℃)
©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:1.0 page5of6 MechanicalData：
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