SSRP105B1 STMICROELECTRONICS | Alldatasheet

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Application Specific Discretes ASD™ SSRP105B1® Where asymmetrical protection against lightning strikes and other transient overvoltages is required : n Solid-State relays n SLIC with integrated ring generator MAIN APPLICATIONS SO-8 The SSRP105B1 is a dual asymmetrical transient voltage suppressor designed to protect a solid-state ring relay or SLICs with integrated ring generator from overvoltages. The asymmetrical protection configuration is necessary to allow the use of all different types of ringing schemes.

DESCRIPTION

DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE October 2002 - Ed: 1A 4 5 GND NC NC TIP RING GND GND GND TM: ASD is trademarks of STMicroelectronics. Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Required Peak current (A) Min. serial resistor to meet standards (Ω ) ITU-T K20 / K21 1500 10/700 5/310 38 - VDE0433 2000 10/700 5/310 50 - IEC61000-4-5 Level 3 Level 4 1.2/50 100 FCC Part 68 1500 800 200 100 BELLCORE GR1089 First level 2500 1000 500 100 COMPLY WITH THE FOLLOWING STANDARDS n Dual bi-directional asymmetrical protection Stand-off voltages: l Between Line and Ground +105V for positive voltages -180V for negative voltages l Between Line and Line +180V for positive voltages -180V for negative voltages n Peak pulse current: IPP = 50A (5/310µs) n Holding current: l IH+ = 100mA l IH- = 150mA

FEATURES

Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10 / 1000 µs 10 / 560µs 5 / 310µs 10 / 160µs 8 / 20µs 2 / 10µs 120 175 A I TSM Non repetitive surge peak on-state current (F=50Hz) tp = 0.2 s t p=5s tp = 15 min. 8.5 4.5 2.5 A T op Operating temperature range 0t o+7 0 ° C Tstg Tj Storage temperature range Maximum operating junction temperature -5 5t o+1 5 0 + 150 TL Maximum lead temperature for soldering during 10s 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Note 1 : Pulse waveform : 10/1000µs t r=10µs t p=1000µs 10/560µs t r=10µs t p=560µs 5/310µs t r=5µs t p=310µs 10/160µs t r=10µs t p=160µs 8/20µs t r=8µs t p=20µs 2/10µs t r=2µs t p=10µs 100 %I PP t tr p 0 t Symbol Parameter Value Unit R th (j-a) Junction to ambient 170 °C/W THERMAL RESISTANCE I V IPP IH IR VR VBR VBO Symbol Parameter VR Stand-off voltage IR Leakage current at stand-off voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol Parameter Test conditions (note 1) Min. Typ. Max. Unit VBO Breakover voltage (note 2) Positive voltage Negative voltage . 50Hz . 10/700µs . 50Hz . 10/700µs 165 165 225 225 V IH Holding current Positive polarity Negative polarity 100 150 mA IR Leakage current (note 3) VR = +105 V VR = - 180 V µA C Capacitance F = 1MHz, V RMS = 1V, VR(T/G)= -5V F = 1MHz, VRMS = 1V, VR(T/G)= -50V pF ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb =25°C) Symbol Parameter Test conditions Min Max Unit IR Leakage current (note 3) VR = +180 V VR = - 180 V µA Note 1: Positive voltage means between T and G, or between R and G. Negative voltage means between G and T, or between G and R. Note 2: See test circuit for VBO parameters Note 3: IR measured at VR guarantees VBR >V R ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb =25°C) IH(Tamb)/IH(Tamb=25°C) Tamb(°C) 0.2 0.4 0.6 0.8 1.2 0 2 04 06 08 0 Fig. 4:Relative variation of holding current versus junction temperature. 0.01 0.1 1 10 100 1000 F= 50Hz ITSM(A) tp(s) Fig. 5:Non-repetitive peak on-state current versus overload duration (Tj initial = +25°C).. 100 1 10 100 1000 Tj= 25°C F= 1MHz Vrms= 1V TIPor RING(+) / GND(-) GND(+) / TIP or RING(-) C(pF) VR(V) Fig. 6: Capacitance versus applied reverse voltages (typical values).

FUNCTION HOLDING CURRENT (I H ) TEST CIRCUIT (GO-NO GO TEST) R VBA T = - 48 V Surge generator D.U.T. This is a GO-NOGO test which allows to confirm the holding current (IH ) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000µs. 3) The D.U.T will come back off-state within 50 ms max. Pulse (µs) V p C 1 C 2 LR 1 R 2 R 3 R 4 IPP R p tr tp (V) (µF) (nF) (µH) ( Ω )( Ω )( Ω )( Ω ) (A) ( Ω ) 10 700 1000 20 200 0 50 15 25 25 38 0 1.2 50 1500 1 33 0 76 13 25 25 30 10 2 10 2500 10 0 1.1 1.3 0 3 3 38 62 VP L TIP RING GND C 1 R 1 R 4 R 3 R 2 C 2 TEST CIRCUIT FOR V BO PARAMETERS: SSRP 105 B 1 RL SOLID STATE RELAY PROTECTION STAND-OFF VOLTAGE PACKAGE: 1 = SO-8 Plastic PACKAGING: RL = Tape and Reel = Tube ORDER CODE

k h x 45° E e AA2 B D H L C (Seating Plane) 0.25mm (Gage Plane) ddd C REF. DIMENSIONS Millimetres Inches Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.1 0.25 0.004 0.010 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 e 1.27 Typ. 0.05 Typ. H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.019 L 0.40 1.27 0.016 0.050 k 8° (max) ddd 0.100 0.004 Ordering type Marking Package Weight Base Qty (pcs) Delivery mode SSRP105B1 SSRP105B1RL SSR105 SO-8 0.08 g. 100 2500 Tube Tape & Reel OTHER INFORMATION 6.8 4.2 1.27 0.6 FOOT-PRINT DIMENSIONS (in millimeters) PACKAGE MECHANICAL DATA SO-8 (Plastic) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com