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90A, 60V , RDS(ON) 9.9mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Nov-2010 Rev.A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe ITO-220 saves board space. Fast switching speed. High performance trench technology. PRODUCT SUMMARY SSRF90N06-10 VDS(V) RDS(on) (m ID(A) 60 9.9@VGS= 10V 90 1 13@VGS= 4.5V ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 1 ID @TC=25℃ 90 A Pulsed Drain Current 2 IDM 240 A Continuous Source Current (Diode Conduction) 1 I S 90 A Total Power Dissipation 1 P D @TC=25℃ 300 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient 1 R θJA 62.5 °C / W Maximum Thermal Resistance Junction-Case R θJC 0.5 °C / W Notes： 1 Package Limited. 2 Pulse width limited by maximum junction temperature. Gate Source Drain ITO-220 Dimensions in millimeters AM J K LL G F B N D E CH REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 15.00 15.60 H 3.00 3.80 B 9.50 10.50 J 0.90 1.50 C 13.00 Min K 0.50 0.90 D 4.30 4.70 L 2.34 2.74 E 2.50 3.10 M 2.50 2.90 G 0.30 0.70
90A, 60V , RDS(ON) 9.9mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Nov-2010 Rev.A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage V GS(th) 1 - 4 V V DS= VGS, ID = 250 μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= 20V Zero Gate Voltage Drain Current I DSS - - 1 μA VDS= 48V, VGS= 0V - - 25 V DS= 48V, VGS= 0V, TJ=55°C On-State Drain Current 1 I D(on) 120 - - A V DS = 5V, VGS= 10V Drain-Source On-Resistance 1 R DS(ON) - - 9.9 mΩ VGS= 10V, ID= 30 A - - 13 V GS= 4.5V, ID= 20 A Forward Transconductance 1 g fs - 30 - S V DS= 15V, ID= 30 A Diode Forward Voltage V SD - 1.1 - V I S= 34 A, VGS= 0 V Dynamic 2 Total Gate Charge Q g - 49 - nC VDS = 15 V VGS = 4.5 V ID = 90 A Gate-Source Charge Q gs - 9.0 - Gate-Drain Charge Q gd - 10 - Turn-on Delay Time T d(on) - 16 - nS VDD= 25 V ID= 34 A VGEN = 10 V RL= 25 Rise Time T r - 10 - Turn-off Delay Time T d(off) - 50 - Fall Time T f - 23 - Notes 1 Pulse test ：Pulse width ≦ 300 μs, duty cycle ≦ 2 ％. 2 Guaranteed by design, not s ubject to production testing.