SSRF10N60SL_15 SECOS | Alldatasheet
Document overview
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Technical content
10A , 600V , R DS(ON) 1Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ITO -220 RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSRF10N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .
FEATURES
/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V TC =25° C 10 A Continuous Drain Current TC =100° C ID 7 A Pulsed Drain Current IDM 40 A TC =25° C 50 Total Power Dissipation Derate above 25° C PD 0.4 W Single Pulse Avalanche Energy 1 E AS 654 mJ Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient R θJA 120 ° C / W Maximum Thermal Resistance Junction-Case R θJC 2.5 ° C / W Notes: 1. L=30mH,I AS =6A, V DD =150V, R G =25 Ω, Starting T J =25° C Gate Source Drain AM J K LL G F B N D E CH A 14.60 16.50 H 2.70 4.00 B 9.50 10.50 J 0.90 1.50 C 12.60 14.0 0 K 0.50 0.95 D 4.30 5.10 L 2.34 2.74 E 2.3 0 3.2 M 2.4 0 3.60 F 2.3 0 3.10 N φ 3.0 φ 3.4 G 0.30 0.75
10A , 600V , R DS(ON) 1Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 600 - - V V GS =0, I D = 250 µA Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±30V Drain-Source Leakage Current I DSS - - 1 µA V DS =600V, V GS =0 Static Drain-Source On-Resistance R DS(ON) - 0.75 1 Ω V GS =10V, I D =5A Total Gate Charge 1.2 Q g - 19.38 - Gate-Source Charge 1.2 Q gs - 6.26 - Gate-Drain Change 1.2 Q gd - 6.55 - nC ID =10A VDS =480V VGS =10V Turn-on Delay Time 1.2 T d(on) - 32.33 - Rise Time 1.2 Tr - 60.40 - Turn-off Delay Time 1.2 T d(off) - 58.67 - Fall Time 1.2 Tf - 38.67 - nS VDD =300V ID =10A R G =25 Ω Input Capacitance C iss - 1132 - Output Capacitance C oss - 135 - Reverse Transfer Capacitance C rss - 3.91 - pF VGS =0 VDS =25V f =1.0MHz Source-Drain Diode Diode Forward Voltage V SD - - 1.3 V I S=10A, V GS =0 Continuous Source Current I S - - 10 A Pulsed Source Current I SM - - 40 A Integral Reverse P-N Junction Diode in the MOSFET Reverse Recovery Time 1. T rr - 535.39 - ns Reverse Recovery Charge 1. Q rr - 4.6 - µC IS=10A,V GS =0, dl F/dt=100A/ µS Notes: 1. Pulse Test: Pulse width ≦300 µS, Duty cycle ≦2% 2. Essentially independent of operating temperature.
10A , 600V , R DS(ON) 1Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 3 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
10A , 600V , R DS(ON) 1Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 4 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
10A , 600V , R DS(ON) 1Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 5 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL TEST CURVES