SSRF02N65SL SECOS | Alldatasheet
Document overview
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Technical content
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ITO -220 RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSRF02N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .
FEATURES
/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V TC =25° C 2 A Continuous Drain Current TC =100° C ID 1.3 A Pulsed Drain Current IDM 8 A TC =25° C 25 Total Power Dissipation Derate above 25° C PD 0.2 W Single Pulse Avalanche Energy 1 E AS 100 mJ Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient R θJA 120 ° C / W Maximum Thermal Resistance Junction-Case R θJC 5 ° C / W Notes: 1. L=30mH,I AS =2.37A, V DD =60V, R G =25 Ω, Starting T J =25° C Gate Source Drain AM J K LL G F B N D E CH A 14.60 16.50 H 2.70 4.00 B 9.50 10.50 J 0.90 1.50 C 12.60 14.0 0 K 0.50 0.95 D 4.30 5.10 L 2.34 2.74 E 2.3 0 3.2 M 2.4 0 3.60 F 2.3 0 3.10 N φ 3.0 φ 3.4 G 0.30 0.75
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 650 - - V V GS =0, I D = 250 µA Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±30V Drain-Source Leakage Current I DSS - - 1 µA V DS =650V, V GS =0 Static Drain-Source On-Resistance R DS(ON) - 4.3 4.8 Ω V GS =10V, I D =1A Total Gate Charge 1.2 Q g - 5.83 - Gate-Source Charge 1.2 Q gs - 1.73 - Gate-Drain Change 1.2 Q gd - 2 - nC ID =2A VDS =520V VGS =10V Turn-on Delay Time 1.2 T d(on) - 10.67 - Rise Time 1.2 Tr - 20 - Turn-off Delay Time 1.2 T d(off) - 12.4 - Fall Time 1.2 Tf - 18 - nS VDD =325V ID =2A R G =25 Ω Input Capacitance C iss - 261.8 - Output Capacitance C oss - 34.3 - Reverse Transfer Capacitance C rss - 1.3 - pF VGS =0 VDS =25V f =1.0MHz Source-Drain Diode Diode Forward Voltage V SD - - 1.4 V I S=2A, V GS =0 Continuous Source Current I S - - 2 A Pulsed Source Current I SM - - 8 A Integral Reverse P-N Junction Diode in the MOSFET Reverse Recovery Time T rr - 368.88 - ns Reverse Recovery Charge Q rr - 1.08 - µC IS=2A,V GS =0, dl F/dt=100A/ µS Notes: 1. Pulse Test: Pulse width ≦300 µS, Duty cycle ≦2% 2. Essentially independent of operating temperature.
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 3 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 4 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 25-Sep-2013 Rev. A Page 5 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL TEST CURVES