SSR2008CTM SSDI | Alldatasheet

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Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0075F DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet FEATURES:

  • PIV: 100 Volts
  • Low Reverse Leakage Current
  • Low Forward Voltage Drop
  • Guard Ring for Overvoltage Protection
  • Isolated Hermetically Sealed Package
  • Available in Glass or Ceramic Seal Packages
  • Custom Lead Forming Available
  • Eutectic Die Attach
  • 175°C Operating Junction Temperature
  • TX, TXV, and Space Level Screening Available SSR2008CTM, SSR2008CTZ SSR2009CTM, SSR2009CTZ SSR2010CTM, SSR2010CTZ

20 AMPS

100 VOLTS

Available in Given Voltage (2008, 2009, 2010) in the Following Configurations: TO-254: SSR2010CTM, SSR2010CTMUB, SSR2010CTMDB, SSR2010CAM, SSR2010CAMUB, SSR2010CAMDB SSR1010DM, SSR1010DMUB, SSR1010DMDB TO-254Z: SSR2010CTZ, SSR2010CTZUB, SSR2010CTZDB, SSR2010CAZ, SSR2010CAZUB, SSR2010CAZDB SSR1010DZ, SSR1010DZUB, SSR1010DZDB MAXIMUM RATINGS 1/ Symbol Value Unit Peak Repetitive Reverse Voltage and DC Blocking Voltage SSR2008CTM & CTZ SSR2090CTM & CTZ SSR2010CTM & CTZ VRRM VRWM VR 100 Volts Average Rectified Forward Current 3/ 4/ (Resistive Load, 60 Hz, Sine Wave, TC = 25°C) IO 20 Amps Peak Surge Current 3/ 4/ (8.3 ms Pulse, Half Sine Wave, TA = 25°C) IFSM 300 Amps Operating and Storage Temperature TOP & Tstg -65 to +175 °C Maximum Thermal Resistance Junction to Case 3/ Junction to Case 2/ RθJC 1.0 1.7 °C/W NOTE: 1/ All Electrical Characteristics @25 °C, Unless Otherwise Specified. 2/ Per Leg. 3/ Pins 1 and 3 Connected Together. 4/ Doubler: IO = 10A, IFSM = 200A.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0075F DOC ELECTRICAL CHARACTERISTICS 1/, 2/ Symbol Max Unit Instantaneous Forward Voltage Drop (300 - 500µs Pulse) IF = 1A IF = 5A IF = 10A VF1 VF2 VF3 0.57 0.72 0.80 Volts Instantaneous Forward Voltage Drop (300 - 500µs Pulse) IF = 10A, TA = 100°C IF = 10A, TA = -55°C, VF4 VF5 0.70

0.90 Volts

(300µs pulse minimum) VR = 100V, TA = 25°C VR = 100V, TC = 100°C IR1 IR2 100 µA mA Junction Capacitance (VR = 10 V, f = 1MHz, TA = 25°C) CJ 400 pF CASE OUTLINE: TO-254 (Suffix M) CASE OUTLINE: TO-254Z (Suffix Z) OPTIONAL LEAD BEND CONFIGURATION SUFFIX MDB & ZDB SUFFUX MUB & ZUB PIN ASSIGNMENT CODE FUNCTION PIN 1 PIN 2 PIN 3 CT Common Cathode Anode Cathode Anode CA Common Anode Cathode Anode Cathode D Doubler Cathode Common Anode DR Reverse Doubler Anode Common Cathode NOTE: 1/ All Electrical Characteristics @25 °C, Unless Otherwise Specified. 2/ Per Leg. Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR2008CTM, SSR2008CTZ SSR2009CTM, SSR2009CTZ SSR2010CTM, SSR2010CTZ