SSQF02N60J SECOS | Alldatasheet

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Technical content

2A, 600V , R DS(ON) 4.4 Ω N-Ch Enhancement Mode Power MOSFET 11-Dec-2015 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ITO -220 J RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits whose diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

FEATURES

/circle6 Robust high voltage termination /circle6 Specified avalanche energy /circle6 Source-to-drain diode recovery time comparable to a discrete fast recovery diode /circle6 Diode is characterized for the use in bridge circuits /circle6 I DSS and V DS(ON) are specified at the elevated temperature ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 2 A Pulsed Drain Current IDM 9 A Power Dissipation PD 2 W Single Pulsed Avalanche Energy 1 E AS 128 mJ Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Thermal Resistance Rating Thermal Resistance from Junction to Ambient R θJA 62.5 ° C/ W Notes: 1. E AS condition: L=64mH, IL=2A, V DD =50V, R G =25 Ω, T J=25° C. Gate Source Drain A 14.80 15.20 H 3.60 4.00 B 9.96 10.36 J 1.30 REF. C 13.20 REF. K 0.50 0.75 D 4.30 4.70 L 2.54 REF. E 2.80 3.20 M 2.70 REF. F 2.50 2.90 N φ 3.5 REF. G 0.50 0.75

2A, 600V , R DS(ON) 4.4 Ω N-Ch Enhancement Mode Power MOSFET 11-Dec-2015 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage B VDSS 600 - - V V GS =0, I D =250 µA Gate-Threshold Voltage 1 V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Gate-Source Leakage Current 1 I GSS - - ±100 nA V DS =0V, V GS = ±20V Drain-Source Leakage Current I DSS - - 25 µA V DS =600V, V GS =0 Static Drain-Source On-Resistance 1 R DS(ON) - - 4.4 Ω V GS =10V, I D =1A Forward Transconductance 1 g FS 1 - - S V DS =50V, I D =1A Input Capacitance C iss - 435 - Output Capacitance C oss - 56 - Reverse Transfer Capacitance C rss - 9.2 - pF VDS =25V VGS =0 f=1MHz Turn-on Delay Time T d(on) - 12 - Rise Time T r - 21 - Turn-off Delay Time T d(off) - 30 - Fall Time Tf - 24 - nS VDD =300V VGS =10V R G =18 Ω ID =2A Diode Forward Voltage 1 V SD - - 1.6 V I S=2A, V GS =0 Notes: 1. Pulse Test : Pulse width ≦300 µS, duty cycle ≦2%.

2A, 600V , R DS(ON) 4.4 Ω N-Ch Enhancement Mode Power MOSFET 11-Dec-2015 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES