SSQ73N10SG

SSQ73N10SG SECOS | Alldatasheet

Document overview

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• PDF pages: 4

Technical content

73A, 100V , R DS(O/glyph1197) 11mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -220 73N10SG /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSQ73N10SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ73N10SG meet the RoHS and Green Product with Function reliability approved.

FEATURES

/circle6 RDS(on) ≦11mΩ @V GS =10V /circle6 RDS(on) ≦14mΩ @V GS =4.5V /circle6 High speed power switching, Logic Level /circle6 Enhanced Body diode dv/dt capability /circle6 Enhanced Avalanche Ruggedness /circle6 100% UIS Tested, 100% Rg Tested /circle6 TO-220 Package MARKING ABSOLUTE MAXIMUM RATINGS (T J=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TC =25°C 73 Continuous Drain Current (Silicon Limited) TC =100°C ID A Pulsed Drain Current IDM 190 A Avalanche Energy, Single Pulse, @L=0.1mH TC =25°C E AS 22 mJ Power Dissipation T C =25°C P D 125 W Operating Junction and Storage Temperature Range TJ, T STG -55 ~ 175 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient R θJA 50 Maximum Thermal Resistance Junction-Case RθJC 1.2 °C / W Gate Source Drain Date Code A 9.96 10.36 H 2.54 BSC. B 14.7 16 I 2.04 2.92 C 2.74 BSC. J 3.745 REF. D 12.7 14.73 K 0.356 0.5 E 1.15 1.82 L 5.85 6.85 F 0.39 1.01 M 0.51 1.39 G 3.56 4.82

73A, 100V , R DS(O/glyph1197) 11mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain-Source Breakdown Voltage BV DSS 100 - - V V GS=0, I D=250µA Gate Threshold Voltage V GS(th) 1.4 1.9 2.4 V V DS=V GS , I D=250µA Forward Transfer conductance g fs - 60 - S V DS =5V, I D=20A Gate-Source Leakage Current I GSS - - ±100 nA V GS =±20V TJ=25°C - - 1 Drain-Source Leakage Current TJ=100°C IDSS - - 100 µA V DS =100V, V GS =0 - 9 11 mΩ V GS =10V, I D=20A Static Drain-Source On-Resistance RDS(ON) - 11 14 mΩ V GS =4.5V, I D=20A Total Gate Charge Q g - 29 - V GS =10V Total Gate Charge Q g - 14 - V GS =4.5V Gate-Source Charge Q gs - 5 - Gate-Drain (“Miller”) Change Q gd - 5 - nC ID=14A VDD=50V VGS =10V Turn-on Delay Time T d(on) - 8 - Rise Time Tr - 3 - Turn-off Delay Time T d(off) - 26 - Fall Time Tf - 4 - nS VDD =50V ID=14A VGS =10V RG =10Ω Input Capacitance C iss - 2275 - Output Capacitance C oss - 162 - Reverse Transfer Capacitance C rss - 7.9 - pF VGS =0 VDS=50V f=1.0MHz Source-Drain Diode Forward On Voltage V SD - 0.9 1.2 V I F=20A, V GS =0 Reverse Recovery Time T rr - 33 - nS Reverse Recovery Charge Q rr - 157 - nC VR=50V, I F=12A, dl/dt=500A/µs

73A, 100V , R DS(O/glyph1197) 11mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE

73A, 100V , R DS(O/glyph1197) 11mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE