SSQ63N60SG SECOS | Alldatasheet

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Technical content

63A, 60V , R DS(O/glyph1197) 9mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -220 63N60SG /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSQ63N60SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ63N60SG meet the RoHS and Green Product with Function reliability approved.

FEATURES

/circle6 RDS(on) ≦9mΩ @V GS =10V /circle6 RDS(on) ≦13mΩ @V GS =4.5V /circle6 High speed power switching, Logic Level /circle6 Enhanced Body diode dv/dt capability /circle6 Enhanced Avalanche Ruggedness /circle6 100% UIS Tested, 100% Rg Tested /circle6 TO-220 Package MARKING ABSOLUTE MAXIMUM RATINGS (T J=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TC =25°C 63 Continuous Drain Current (Silicon Limited) TC =100°C 45 Continuous Drain Current (Package Limited) TC =25°C ID A Pulsed Drain Current IDM 270 A Avalanche Energy, Single Pulse, @L=0.4mH TC =25°C E AS 20 mJ Power Dissipation T C =25°C P D 79 W Operating Junction and Storage Temperature Range TJ, T STG -55 ~ 175 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient R θJA 65 Maximum Thermal Resistance Junction-Case RθJC 1.9 °C / W Gate Source Drain Date Code A 9.96 10.36 H 2.54 BSC. B 14.7 16 I 2.04 2.92 C 2.74 BSC. J 3.745 REF. D 12.7 14.73 K 0.356 0.5 E 1.15 1.82 L 5.85 6.85 F 0.39 1.01 M 0.51 1.39 G 3.56 4.82

63A, 60V , R DS(O/glyph1197) 9mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain-Source Breakdown Voltage BV DSS 60 - - V V GS=0, I D =250µA Gate Threshold Voltage V GS(th) 1 1.8 2.4 V V DS =V GS , I D =250µA Forward Transfer conductance g fs - 26 - S V DS =5V, I D =20A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25°C - - 1 Drain-Source Leakage Current TJ=100°C IDSS - - 100 µA V DS =60V, V GS =0 - 7.3 9 V GS =10V, I D =20A Static Drain-Source On-Resistance RDS(ON) - 10 13 mΩ VGS =4.5V, I D =20A - 24 - V GS =10V Total Gate Charge Q g - 12 - V GS =4.5V Gate-Source Charge Q gs - 5 - Gate-Drain (“Miller”) Change Q gd - 3 - nC ID =20A VDD =30V VGS =10V Turn-on Delay Time T d(on) - 9 - Rise Time Tr - 4 - Turn-off Delay Time T d(off) - 29 - Fall Time Tf - 4 - nS VDD =30V ID =20A VGS =10V RG =10Ω Input Capacitance C iss - 1620 - Output Capacitance C oss - 415 - Reverse Transfer Capacitance C rss - 3 - pF VGS =0 VDS =30V f=1.0MHz Source-Drain Diode Forward On Voltage V SD - 0.9 1.2 V I F=20A, V GS =0 Reverse Recovery Time T rr - 30 - nS Reverse Recovery Charge Q rr - 43 - nC VR=30V, I F=20A, dl/dt=300A/µs

63A, 60V , R DS(O/glyph1197) 9mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE

63A, 60V , R DS(O/glyph1197) 9mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE